AGM-Semi-AGM1075D
| Part # | AGM-Semi-AGM1075D |
Download  | AGM-Semi-AGM1075D |
AGM1075D
●
General Description
Product Summary
The AGM1075D combines advanced trench
to
MOSFET technology with a low resistance package
provide
extremely low R
DS(ON)
BVDSS
RDSON
ID
This device is ideal
and battery
for load switch
protection applications.
100V
55mΩ
16A
●
Features
TO-252 Pin Configuration
■
Advance high cell density Trenc
h
t
echnology
Low R
DS(ON)
to minimize conductive loss
■
■
Low Gate Charge for fast switching
D
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
D
S
nd
■
SMPS 2
Synchronous Rectifier
G
■
POL application
■
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
16mm
AGM1075D
AGM1075D
TO-252
330mm
2500
Table 1.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Value
Unit
Drain-Source Voltage (VGS=0V
）
V
V
VDS
VGS
100
±20
16
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
10
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
62
w
w
35
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
13
(Note 3)
EAS
T ,T
mJ
℃
10
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
62.5
3.6
Unit
Parameter
—
1
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
—
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM1075D
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
100
—
V
DSS
DSS
=80V,V =0V
GS
μA
nA
I
=±20V,V =0V
DS
—
±100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
1.7
2.1
—
V
S
=5V,I =3A
Forward Transconductance
DS
GS
GS
D
FS
6
—
—
—
=10V, I
=10A
D
mΩ
mΩ
55
65
75
90
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=3A
D
Dynamic Characteristics
—
—
—
—
—
—
520
40
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=50V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
2.4
f=1.0MHz
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
16.2
3.2
13
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=50V,
ID=10A,RGEN=6Ω
d(off)
t
f
22
Q
g
6
VGS=10V,
VDS=50V, ID=12A
Q
gs
gd
1.1
1.3
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
A
SD
16
Forward on Voltage
VGS=0V,IS=10A
V
SD
V
1.2
—
ns
—
—
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Isd=10A ,
45
63
nc
dI/dt=100A/µs , TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM1075D
Electrical Characteristics Diagrams
56
100
10
1
T
j
= 25 ℃
V
DS
= 10 V
10 V
48
T
j
= 25 ℃
6 V
5.5 V
40
32
24
16
8
5 V
4.5 V
4 V
3.5 V
V
GS
= 3V
0.1
0
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1. Typ. output characteristics
Figure 2. Typ. transfer characteristics
10
3
10
2
10
1
10
0
10.0
7.5
5.0
2.5
0.0
I
D
= 5 A
V
DS
= 50 V
C
iss
C
oss
f
=100 KHz
V
GS
= 0 V
C
rss
0
1
2
3
4
5
6
7
0
20
40
60
80
100
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3. Typ. capacitances
Figure 4. Typ. gate charge
100m
75m
50m
25m
120
115
110
105
100
I
D
= 250 μA
I
D
= 5 A
V
GS
= 0 V
V
GS
= 10 V
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
3
VER2.5
AGM1075D
2.4
2.2
2.0
1.8
1.6
1.4
1.2
100
10
1
T
j
= 25 ℃
I
D
= 250 μA
0.1
-50
0
50
100
150
0.0
0.4
0.8
1.2
1.6
2.0
V
SD
, Source-Drain voltage (V)
T
j
, Junction Temperature (℃)
Figure 7. Threshold voltage
Figure 8. Forward characteristic of body diode
500m
18
15
12
9
400m
300m
200m
100m
0
10 V
5 V
5.5 V
4 V
V
GS
=3.5 V
4.5 V
6
3
0
8
16
24
32
40
48
56
0
20
40
60
80
100
120
140
I
D
, Drain current(A)
T
C
, Case Temperature (℃)
Figure 9. Drain-source on-state resistance
Figure 10. Drain current
100
10
D= t
p
/T
D= 1
10 μs
0.5
10
1
1
0.1
100 μs
0.2
0.1
1 ms
10 ms
DC
0.05
R
DS(ON)
Limited
0.02
0.01
0.1
0.01
Single Pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
100
t
Pulse width(s)
V
DS
, Drain-source voltage(V)
p
Figure 11. Safe operation area T
C
=25 °C
Figure 12. Max. transient thermal impedance
4
VER2.5
AGM1075D
Test circuits and waveforms
Figure 1. Gate charge test circuit & waveform
Figure 2. Switching time test circuit & waveforms
Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4. Diode reverse recovery test circuit & waveforms
5
VER2.5
AGM1075D
TO-252 Package Outline Data
D1
c
2
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
h
A1
b
0.690
0.520
䃥
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
D2
1
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
b
e
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
D
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
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ꢆe7<3
©ꢂ
©ꢃ
D
MILLIMETER
NOM
A2
SYMBOL
MIN
MAX
D1
c1
θ 1
A
A1
A2
A3
b
7.050
0.960
2.250
0.000
7.100
7.150
1.060
2.350
0.100
1.010
2.300
0.050
R
0.760REF.
1.000REF.
0.508REF.
0.508REF.
6.600
b1
c
A1
c1
D
b1
6.550
5.220
0.950
9.700
6.050
6.650
5.420
1.050
10.100
6.150
A3
D1
E
5.320
DETAIL A
c
1.000
b
e
E1
E2
e
9.900
e1
6.100
2.286BSC
4.572REF.
2.800
e1
L
2.650
0.700
2.950
0.900
R1
L1
θ1
R
0.800
7°REF.
1.300REF.
0.250REF.
T’
T
R1
0<=T,T'<=0.12
DETAIL A
6
VER2.5
AGM1075D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on March 10th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
