AGM-Semi-AGM1075MBP

AGM1075MBP  

●

General Description  

Product Summary  

The AGM1075MBP combines advanced trench  

MOSFET technology with a low resistance package  

to  

provide  

extremely low R

DS(ON)  

BVDSS  

RDSON  

ID  

This device is ideal  

and battery  

for load switch  

protection applications.  

100V  

65mΩ  

7.2A  

●

Features  

PDFN3.3*3.3 Pin Configuration  

■

Advance high cell density Trenc

h

t

echnology  

Low R

DS(ON)

to minimize conductive loss  

■

■

Low Gate Charge for fast switching  

■

Low Thermal resistance  

●

Application  

■

MB/VGA Vcore  

nd  

■

SMPS 2

 

Synchronous Rectifier  

■

POL application  

■

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

AGM1075MBP  

AGM1075MBP  

PDFN3.3*3.3  

330mm  

12mm  

5000  

Table 1.  

Absolute Maximum Ratings (TC=25  

)

℃

Symbol  

Parameter  

Value  

Unit  

Drain-Source Voltage (VGS=0V

）

 

V

V

VDS  

VGS  

100  

±20  

Gate-Source Voltage (VDS=0V)  

(Note 1)  

Drain Current-Continuous(Tc=25

℃

)  

7.2  

A

A

A

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

4.5  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

28  

w

w

13  

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

3 .0  

(Note 3)  

EAS  

T ,T  

mJ  

℃

8.0  

Avalanche energy  

Operating Junction and Storage Temperature Range  

J

STG  

-55 To 150  

Tabl

e

2

.  

Thermal Characteristic  

Symbol  

Typ  

Max  

62.5  

3.6  

Unit  

Parameter  

—  

1

R

θJA  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient (Steady State)  

—  

1

R

θJC  

Thermal Resistance Junction-Case  

1

VER2.61  

AGM1075MBP  

Tabl

e

3

.  

Symbol  

On/Off States  

Electrical Characteristics (TJ=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

BV  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

—  

—  

—  

—  

1

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

100  

—  

V

DSS  

DSS  

=100V,V =0V  

GS  

μA  

nA  

I

=±20V,V =0V  

DS  

—  

±100  

I

GSS  

V

g

V

V

V

V

=V ,I

 

=250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

1.2  

1.6  

2.5  

—  

V

S

=5V,I =3A  

Forward Transconductance  

DS  

GS  

GS  

D

FS  

2

—  

—  

—  

=10V, I

 

=10A  

D

mΩ  

mΩ  

65  

99  

90  

R

Drain-Source On-State Resistance  

DS(on)  

=4.5V, I

 

=3A  

D

130  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

520  

40  

C

C

C

Input Capacitance  

pF  

pF  

pF  

iss  

VDS=50V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

Reverse Transfer Capacitance  

2.4  

f=1.0MHz  

Rg  

Gate resistance  

—  

—  

—  

Ω

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

16.2  

3.2  

13  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=10V,VDS=50V,  

ID=10A,RGEN=6Ω  

d(off)  

t

f

22  

Q

g

6

VGS=10V,  

VDS=50V, ID=5A  

Q

gs  

gd  

1.1  

1.3  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

I

—  

—  

—  

—  

A

SD  

7.2  

Forward on Voltage  

VGS=0V,IS=10A  

V

SD  

V

1.0  

—  

ns  

—  

—  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

Isd=10A ,  

45  

63  

nc  

dI/dt=100A/µs , TJ=25

℃

 

—  

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.61  

AGM1075MBP  

Typical Characteristics (T  

J

=25

℃

 

Noted)  

3

VER2.61  

AGM1075MBP  

Typical Characteristics (T

J

=25

℃

Noted)  

4

VER2.61  

AGM1075MBP  

●Dimensions

（

PDFN

3

.

3

×

3

.

3

）  

b

D

MILLIMETER  

SYMBOL  

MIN  

MAX  

A

A1  

A2  

D

0.700  

0.900  

0.152 REF.  

0~0.05  

3.000  

D1  

3.200  

1.135  

0.480  

3.100  

3.450  

1.935  

0.400  

0.750  

0.500  

0.480  

D1  

D2  

E

0.935  

0.280  

2.900  

3.150  

1.535  

0.200  

0.550  

0.300  

0.180  

D2  

E1  

E2  

b

L3  

L2  

e

e

L

L1  

L2  

L3  

H

0~0.100  

0~0.100  

0.315  

ꢀe  

0.515  

©

©

ꢁꢂe  

5

VER2.61  

AGM1075MBP  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the third version issued on May 10th, 2023. This document  

replaces all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

6

VER2.61