AGM-Semi-AGM1075MNA
| Part # | AGM-Semi-AGM1075MNA |
Download  | AGM-Semi-AGM1075MNA |
AGM1075MNA
●
General Description
Product Summary
The AGM1075MNA combines advanced trench
MOSFET technology with a low resistance package
to
provide
extremely low R
DS(ON)
BVDSS
RDSON
ID
This device is ideal
and battery
for load switch
protection applications.
100V
65mΩ
16A
●
Features
PDFN5*6 Pin Configuration
■
Advance high cell density Trenc
h
t
echnology
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
D2
■
Low Thermal resistance
D2
D1
D1
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
G2
S2
G1
S1
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
AGM1075MNA
AGM1075MNA
PDFN5*6
330mm
3000
Tabl
e
1
.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
V
V
VDS
VGS
100
±20
16
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
10
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
62
w
w
35
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
13
(Note 3)
EAS
T ,T
mJ
℃
10
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
62.5
3.6
Unit
Parameter
—
1
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
—
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.6
AGM1075MNA
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
100
—
V
DSS
DSS
=100V,V =0V
GS
μA
nA
I
=±20V,V =0V
DS
—
±100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
1.7
2.2
—
V
S
=5V,I =3A
Forward Transconductance
DS
GS
GS
D
FS
5
—
—
—
=10V, I
=10A
D
mΩ
mΩ
65
99
90
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=3A
D
130
Dynamic Characteristics
—
—
—
—
—
—
520
40
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=50V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
2.4
f=1.0MHz
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
16.2
3.2
13
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=50V,
ID=10A,RGEN=6Ω
d(off)
t
f
22
Q
g
6
VGS=10V,
VDS=50V, ID=12A
Q
gs
gd
1.1
1.3
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
A
SD
16
Forward on Voltage
VGS=0V,IS=10A
V
SD
V
1.0
—
ns
—
—
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Isd=10A ,
45
63
nc
dI/dt=100A/µs , TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM1075MNA
MILLIMETER
●Dimensions
（
PDFN
5*6
）
SYMBOL
MIN
Typ.
1.000
MAX
A
A1
A2
D
0.900
1.100
0.254 REF.
0~0.05
4.900
D3
D
4.824
1.605
0.500
4.924
5.924
3.375
5.674
0.350
4.976
1.805
0.700
5.076
6.076
3.575
5.826
0.450
D1
D2
D3
E
1.705
0.600
5.000
6.000
D1
D2
E1
E2
b
3.475
5.750
0.400
e
1.270 TYP.
0.610
L
0.534
0.424
0.686
0.576
L1
L2
k
0.500
1.800 REF.
1.290
b
1.190
0.549
ꢀe
1.390
0.701
ꢁꢂe
e
H
0.625
©
¶
d
ꢁꢃe
1.100
1.200
1.300
0.100
Millimeters
Symbols
NOM.
1.05
0.40
MIN.
0.90
0.35
0.20
4.90
MAX.
1.20
0.50
0.35
5.20
6
8
7
6
5
5
7
8
A
b
C
H
L2
P
0.25
5.05
D1
D2
D
D1/D2
1.51 1.61 1.71
0.50 0.60 0.70
1.200
E2
d
E
E
E
1
6.15
5.75
O
6.00
5.60
6.30
5.90
E1
E2
e
3.47 3.57 3.67
1.27 BSC.
d
K
N
0.48 0.58 0.68
1.17 1.27 1.37
H
K
0.64
8°
0
0.84
L
0.74
1
3
4
2
4
2
3
1
L
L1
0.20 REF.
L1/L2
e
b
10° 12°
0.08 REF.
θ
M
N
O
P
0.15
–
θ
M
0.25 REF.
1.28 REF.
A
C
D
5
VER2.6
AGM1075MNA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.6
