AGM-Semi-AGM1095MAP
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AGM1095MAP
● General Description
Product Summary
The AGM1095MAP combines advanced trench
MOSFET technology with a low resistance
to provide extremely low R
DS(ON)
.
package
BVDSS
100V
RDSON
ID
device is
This
protection applications.
● Features
ideal for load switch and battery
96mΩ
7A
-100V
220mΩ
-6A
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
PDFN3.3*3.3 Pin Configuration
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
D1
D2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G2
G1
POL application
S1
S2
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
PDFN3.3*3.3
330mm
12mm
5000
AGM1095MAP
AGM1095MAP
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
V
V
A
A
Drain-Source Voltage (
V
GS=
0V
）
V
DS
V
GS
100
±20
7.0
-100
Gate-Source Voltage (
V
DS=
0V)
±20
-6.0
-3.6
(Note 1)
Drain Current-Continuous(T
C
=25
℃
)
ID
Drain Current-Continuous(TC=100
℃
)
4.2
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
P
D
28
-24.5
32
Total Power Dissipation(T
C
=25
℃
)
33.7
13.5
W
W
Total Power Dissipation(TC=100
℃
)
12.8
110
(Note 3)
Avalanche energy
mJ
EAS
90
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
℃
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
50
50
3.7
3.9
1
VER2.6
AGM1095MAP
Table 3. N- Channel Electrical Characteristics (TJ=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
100
—
V
DSS
=100V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.0
—
—
7
2.1
—
V
S
=5V,I =3A
Forward Transconductance
DS
GS
GS
D
FS
=10V, I
=6A
D
—
—
mΩ
mΩ
96
120
140
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=3A
D
100
Dynamic Characteristics
—
—
—
—
—
—
999
C
C
C
Input Capacitance
pF
pF
pF
iss
Output Capacitance
oss
rss
VDS=50V,VGS=0V,
F=1MHZ
46
32
—
Reverse Transfer Capacitance
=0V,
Rg
Gate resistance
VGS
VDS
—
—
Ω
=0V,f=1.0MHz
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
50
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
2.9
t
t
r
VGS=10V,VDS=30V,
RL=15
Ω
,RGEN=2.5
Ω
17.3
2.8
d(off)
t
f
Q
Q
g
25.4
4.2
VGS=10V, VDS=30V,
ID=3A
gs
gd
Q
4.3
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
7.0
1.2
A
SD
Forward on Voltage
VGS=0V,IS=6A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=6A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM1095MAP
Table 3. P-Channel Electrical Characteristics (TJ=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-100
DSS
V
μA
nA
—
—
=-100V,V =0V
GS
-1
—
DSS
=±20V,V =0V
DS
±100
I
—
GSS
—
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.2
—
-2.1
—
V
S
-1.6
7
=-5V,I =-3A
Forward Transconductance
FS
DS
GS
GS
D
=-10V, I
=-6A
D
—
—
220
225
250
250
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-3A
D
Dynamic Characteristics
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
—
—
—
1600
86
pF
pF
pF
VDS=-50V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
40
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
1.2
—
Ω
—
—
—
—
—
—
—
12
152
28
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-50V,
ID=-10A,RGEN=3.3Ω
t
d(off)
38
t
f
Q
g
33
VGS=-10V,
VDS=-50V, ID=-4A
Q
gs
gd
4.3
7.2
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
—
—
SD
-6.0
-1.2
—
A
Forward on Voltage
VGS=0V,IS=-6A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-6A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.6
AGM1095MAP
N- Channel 100V
MOSFET
18
130
125
120
115
I
D
= 2 A
V
GS
=10V
15
V
GS
=7V
V
GS
=5V
12
V
GS
=4.5V
9
6
3
0
V
GS
=3V
4
6
8
10
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
12
10
8
V
DS
=60V
I
D
=2A
7.5
5
6
T
J
=150
℃
T
J
=25
℃
4
2.5
0
2
0
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
– 5 0
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r
4
VER2.6
AGM1095MAP
N- Channel 100V
MOSFET
10000
100. 00
10. 00
1. 00
F=1.0MHz
Ciss
1000
100
10
10us
1ms
10ms
100ms
DC
Coss
0. 10
T
=
25
℃
C
Crss
Single Pul
0. 01
1
5
9
13
17
21
25
0. 1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
5
VER2.6
AGM1095MAP
P- Channel 100V
MOSFET
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
6
VER2.6
AGM1095MAP
P- Channel 100V
MOSFET
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
7
VER2.6
AGM1095MAP
P- Channel 100V
MOSFET
Vds Drain-Source Voltage (V)
T
C
Case
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Drain Current vs Case Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8
Safe Operation Area
Figure 10
Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
8
VER2.6
AGM1095MAP
●Dimensions
（
PDFN
3
.
3
×
3
.
3
）
b
D
MILLIMETER
MIN MAX
0.700 0.900
0.152 REF.
0~0.05
3.000
SYMBOL
A
A1
A2
D
D1
3.200
1.135
0.480
3.100
3.450
1.935
0.400
0.750
0.500
0.480
D1
D2
E
0.935
0.280
2.900
3.150
1.535
0.200
0.550
0.300
0.180
D2
E1
E2
b
L3
L2
e
e
L
L1
L2
L3
H
0~0.100
0~0.100
0.315
ꢀe
0.515
©
©
ꢁꢂe
9
VER2.6
AGM1095MAP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
10
VER2.6
