AGM-Semi-AGM1405F
| Part # | AGM-Semi-AGM1405F |
Download  | AGM-Semi-AGM1405F |
AGM1405F
●
General Description
Product Summary
The AGM1405F combines advanced trenchMOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
This device is ideal
switch and battery
BVDSS
RDSON
ID
for load
protection applications.
40V
3mΩ
130A
●
Features
■
Advance high cell density Trench technology
TO-220F Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM1405F
AGM1405F
TO-220F
1000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
40
±20
130
82
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
420
DM (pluse)
w
w
105
41
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
360
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
45
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
1.2
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM1405F
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
DSS
=40V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.1
—
1.5
16
2.1
—
V
S
g
FS
=5V,I =20A
D
Forward Transconductance
DS
GS
GS
=10V, I
=20A
D
3.0
3.5
4.2
4.9
—
—
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
Dynamic Characteristics
—
—
—
—
—
—
2600
370
170
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
Ω
1.7
Switching Times
Turn-on Delay Time
—
—
t
nS
d(on)
6.9
—
—
—
—
—
—
—
—
t
Turn-on Rise Time
Turn-Off Delay Time
r
nS
nS
1.7
30
VGS=10V,VDS=15V,
RGEN=3.3Ω
t
d(off)
RL=0.75Ω
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
f
nS
nC
nC
nC
15
20
9
Q
g
VGS=10V, VDS=20V,
ID=12A
—
—
—
—
Q
gs
gd
Q
11
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
VG=VD=0V,Force Current
VGS=0V,IS=12A
—
—
—
—
130
1.2
I
A
SD
Forward on Voltage
V
SD
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=12A , dI/dt=100A/µs ,
—
—
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM1405F
Fig.1 Power Dissipation
Fig.2 Typical output Characteristics
V
GS
=10V
V
GS
=4.5V
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
3
VER2.5
AGM1405F
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche
Measurement Circuit
Fig.12 Avalanche
Waveform
4
VER2.5
AGM1405F
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5
VER2.5
AGM1405F
TO-220F Package
Mechanical Data
A
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
E
C2
Min.
4.50
0.74
0.47
2.45
2.60
8.80
9.80
6.40
Max.
Min.
0.177
0.029
0.019
0.096
0.102
0.346
0.386
0.252
Max.
0.193
4.90
0.83
0.65
2.75
3.00
9.30
10.4
6.80
A
B
0.80
0.031 0.033
0.026
0.108
0.118
0.366
0.410
0.268
0.1
C
C2
C3
D
C3
E
L2
F
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
B
L1
L2
L3
V1
C
G
3.30
45°
6
VER2.5
AGM1405F
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
