AGM-Semi-AGM15T05LL
| Part # | AGM-Semi-AGM15T05LL |
Download  | AGM-Semi-AGM15T05LL |
AGM15T05LL
●
General Description
Product Summary
The AGM15T05LL combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
switch and battery
BVDSS
RDSON
ID
for load
protection applications.
150V
5.0mΩ
180A
●
Features
■
Advance high cell density Trench technology
TOLL-8L Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
D
G
●
Application
■
MB/VGA Vcore
nd
S
P
i
n
1
D e s c
r
ip t io n
G a
t
e (G )
■
SMPS 2
Synchronous Rectifier
■
POL application
2
,
3 ,4 ,5 ,6 ,7 ,8
S o u r c e
(
S )
D r a
i
n (D )
9
■
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
25mm
AGM15T05LL
AGM15T05LL
TOLL-8L
330mm
2000
Tabl
e
1
.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
150
±20
180
108
720
250
100
150
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol
℃
-55 To 150
Tabl
e
2
.
Typ
Max
Unit
Parameter
1
—
—
60
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
0.5
θJC
Thermal Resistance Junction-Case
1
VER2.6
AGM15T05LL
Table 3.
Symbol
On/Off States
Electrical Characteristics (T
J
=25 unless
otherwise noted)
℃
Parameter
Conditions
Min
Typ Max
Unit
BV
V
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
D
150
—
V
DSS
DSS
V
V
=150V,V =0V
GS
1
μA
nA
DS
I
I
=±20V,V =0V
DS
—
GS
±
GSS
100
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2.0
—
2.8
18
5.0
4.0
—
V
S
g
FS
V
=5V,I =20A
D
Forward Transconductance
Drain-Source On-State Resistance
DS
V
GS
=10V, I
=20A
R
D
—
DS(on)
mΩ
6.0
Dynamic Characteristics
—
—
—
—
—
—
5025
410
10
C
C
C
Input Capacitance
iss
pF
pF
pF
VDS=75V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
25
31
60
20
19
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=75V,
ID=80A,RGEN=6Ω
d(off)
t
f
Q
g
VGS=10V, VDS=75V,
ID=80A
Q
gs
gd
11
12
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
180
1.2
A
SD
Forward on Voltage
VGS=0V,IS=10A
V
SD
—
45
12
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
IF=10A , dI/dt=100A/µs ,
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM15T05LL
Diagram 1: Power dissipation
Diagram 2: Max. transient thermal impedance
10
0
320
280
240
200
160
120
80
0.5
0.3
-1
10
0.1
0.05
-2
10
0.02
0.01
single pulse
40
-3
0
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
10
0
10
1
0
20 40 60 80
100 120 140 160 180
10
O
T
c
[
C
]
t
p
[s]
P
tot
=f(
T
C
)
Z
thJC
=f(
t
p
); parameter: D=
t
p
/T
Diagram 3: Safe operating area
Diagram 4: Typ. output characteristics
10
3
120
10V
8V
5V
6V
100
80
R
D
S(ON)
limited
10
2
10
1
10
0
10µs
100µs
60
1ms
40
10ms
DC
4.5V
20
-1
0
10
-1
10
0
10
1
10
2
10
3
0.0
0.5
1.0
1.5
DS
[V]
2.0
2.5
3.0
10
V
DS
[V]
V
I
D
=f(
V
DS
);
T
j=25°C; D=0; parameter:
t
p
I
D
=f(
V
DS
);
T
j=25°C; parameter:
V
GS
3
VER2.6
AGM15T05LL
Diagram 6: Gate threshold voltage vs.
Junction temperature
Diagram 5: Typ. transfer characteristics
18
16
14
12
1.3
1.2
1.1
1.0
0.9
125
o
C
25
o
C
10
8
typ
0.8
6
0.7
0.6
0.5
0.4
4
2
0
1
2
3
4
5
6
-60 -40 -20
0 20
40 60 80
100 120 140 160 180
O
V
G
S
[V]
T
[
C
]
j
V
th
=f(
T
j
); I
D
=250
μ
A
I
D
=f(
V
GS
);
V
DS
=5V; parameter:
T
j
Diagram 7: On-state resistance vs. Drain
current
Diagram 8: On-state resistance vs. Junction
temperature
12
14
13
12
11
10
9
10
8
6V
10V
6
8
typ
7
6
5
4
3
4
2
0
2
-60 -40 -20
0 20
40 60 80
100 120 140 160 180
0
3
6
9
12
O
T
j
[
C
]
I
D
[A]
R
DS
(on)=f(
I
D
);
T
j=25°C; parameter:
V
GS
R
DS
(on)=f(
T
j
);
I
D
=20A;
V
GS
=10V
4
VER2.6
AGM15T05LL
Diagram 9: Forward characteristics of reverse
Diagram 10: On-state resistance vs. Vgs
diode
characteristics
10
2
16
14
12
10
8
125
o
C
10
1
10
0
125
o
C
25
o
C
25
o
C
6
-1
4
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10 12 14 16 18 20
gs
[V]
V
S
D
[V]
V
I
F
=f(
V
SD
); parameter:
T
j
R
DS
(on)=f(V
gs
);
I
D
=20A; parameter:
T
j
Diagram 11: Breakdown Voltage Variation vs.
Temperature
Diagram 12: Maximum Drain Current
180
160
140
120
100
80
200
190
180
170
160
150
60
40
20
140
0
-60 -40 -20
0 20
40 60 80
100 120 140 160 180
0
25
50
75
T
[
C
]
100
125
150
175
O
O
T
j
[
C
]
C
V
BR(DSS)
=
f(
T
j
)
; I
D
=
250μA
I
D
= f(
T
c
); V
GS
=10V
5
VER2.6
AGM15T05LL
Diagram 13: Typ. capacitances
10
4
Diagram 14: Typ. gate charge
10
9
8
7
6
5
4
3
2
1
0
Ciss
75V
10
3
Coss
10
2
10
1
Crss
10
0
0
20
40
60
80
100
0
20
40
60
80
100
V
D
S
[V]
Q
gate
[nC]
C
=f(
V
DS
);
V
GS
=0V; f=1MHz
V
GS
=f(
Q
gate
);
I
D
=20A pulsed;
V
DS
=75V
6
VER2.6
AGM15T05LL
Table 7. Diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
Switching times waveform
Unclamped inductive waveform
Table 8. Switching times
Switching times test circuit for inductive load
Table 9. Unclamped inductive load
Unclamped inductive load test circuit
7
VER2.6
AGM15T05LL
TOLL-8L Package
D
D2(2
x
)
MILLIMETER
NOM.
SYMBOL
MIN.
2.200
1.700
0.600
9.700
0.650
1.100
0.400
10.300
11.000
3.200
4.470
9.800
8.000
0.500
MAX.
2.400
1.900
0.800
9.900
0.850
1.300
0.600
10.500
11.200
3.400
4.670
10.000
8.200
0.700
A
A1
b
2.300
1.800
0.700
9.800
0.750
1.200
0.500
10.400
11.100
3.300
b1
b2
b3
c
L2
D4
L1
D
H
D1
D2
©
D4
E
4.570
9.900
i
E1
E2
e
8.100
0.600
1.200 BSC
1.225 BSC
11.700
e1
H
L
H1
H2
11.600
11.800
L3
H1
H2
i
6.950 BSC
5.900 BSC
0.100 REF.
0.350 REF.
3.100 REF.
j
K
L
1.550
0.600
0.500
0.400
1.650
0.700
0.600
1.750
0.800
0.700
0.600
L1
L2
L3
Q
0.500
7.950 REF.
3.100
ꢀꢁe5()ꢂ
R
©
3.000
3.200
K
D1
8
VER2.6
AGM15T05LL
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the third version issued on August 20th, 2023. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
9
VER2.6
