AGM-Semi-AGM15T13D
| Part # | AGM-Semi-AGM15T13D |
Download  | AGM-Semi-AGM15T13D |
AGM15T13D
●
General Description
Product Summary
The AGM15T13D combines advanced trench
MOSFET technology with a low resistance package
to
provide extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
switch and battery
for load
150V
9mΩ
75A
protection applications.
●
Features
TO-252 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
16mm
AGM15T13D
TO-252
AGM15T13D
330mm
2500
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
150
±20
75
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
60
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
320
125
50
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
576
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Parameter
Typ
—
Max
Unit
℃
/W
℃
/W
1
R
θJA
65
Thermal Resistance Junction-ambient (Steady State)
1
R
—
θJC
Thermal Resistance Junction-Case
1.0
1
VER2.5
AGM15T13D
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
150
—
V
DSS
DSS
—
=150V,V =0V
GS
1.0
μA
nA
I
I
—
—
=±20V,V =0V
DS
—
±
GSS
100
V
V
=V ,I
=250μA
DS GS
D
Gate Threshold Voltage
GS(th)
FS
2.0
—
3.2
24
4.0
—
V
S
g
V
DS
=5V,I =15A
D
Forward Transconductance
Drain-Source On-State Resistance
R
—
DS(on)
mΩ
V
=10V, I
=20A
GS
D
9.0
11.5
Dynamic Characteristics
—
—
—
—
—
—
2181
363
7.9
C
C
C
Input Capacitance
Output Capacitance
pF
pF
pF
iss
VDS=75V,VGS=0V,
F=1MHZ
oss
Reverse Transfer Capacitance
Gate resistance
rss
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
—
Ω
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
30
19.4
7.5
6.5
30
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=75V
RGEN=6Ω
RL=3.75Ω
d(off)
t
f
Q
g
VGS=10V, VDS=75V,
ID=20A
Q
gs
gd
7.5
6.5
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
75
I
—
—
A
SD
Forward on Voltage
VGS=0V,IS=20A
V
1.2
V
SD
—
—
—
—
99
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
IS=20A , dI/dt=100A/µs ,
nc
TJ=25
℃
318
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
,VDD=50V,Vgs=10V ID=48A,
L=0.5mH,RG=25ohm
J
2
VER2.5
AGM15T13D
Typical Electrical & Thermal Characteristics
100
30
24
18
12
6
V
DS
= 5.0V
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 5.5V
80
60
40
20
0
T
J
= 125°C
T
J
= 25°C
V
GS
= 5.0V
V
GS
= 4.5V
1.6
0
0
0.4
0.8
1.2
V
DS
(V)
2
2
2.5
3
3.5
4
4.5
5
5.5
6
V
GS
(V)
Figure 1:
Saturation Characteristics
Figure 2:
Transfer Characteristics
12
11
10
9
2.5
2
V
GS
= 10V
I
D
= 20A
1.5
1
V
GS
= 10V
8
0.5
0
7
6
-50
0
50
100
150
0
20
40
60
80
100
Temperature (
C)
I
D
(A)
Figure 3:
R
DS(ON)
vs. Drain Current
Figure 4:
R
DS(ON)
vs. Junction Temperature
100
10
10000
1000
100
10
C
iss
T
J
= 125°C
C
oss
1
0.1
T
J
= 25°C
C
rss
0.01
0.001
1
0
30
60
90
120
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(V)
V
DS
(V)
Figure 5:
Body-Diode Characteristics
Figure 6:
Capacitance Characteristics
3
VER2.5
AGM15T13D
Typical Electrical & Thermal Characteristics
80
150
120
90
60
30
0
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
C)
T
CASE
(
C)
Figure 8:
Power De-rating
Figure 7:
Current De-rating
500
400
300
200
100
0
1000
100
10
Limited by
R
DS(ON)
1.0
s
10
s
100
s
1
1.0ms
10ms
DC
T
J_Max
= 150°C
0.1
0.01
T
C
= 25°C
0.0001
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
(V)
Pulse Width (s)
Figure 9:
Maximum Safe Operating Area
Figure 10:
Single Pulse Power Rating, Junction-to-Case
10
Duty Cycle = T
on
/T
Peak
T
J
= T
C
+ P
D
x Z
JC
x R
JC
R
JC
= 0.85
°
C/W
1
0.1
Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11:
Normalized Maximum Transient Thermal Impedance
4
VER2.5
AGM15T13D
TO-252 Package Outline Data
D1
c
2
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
h
A1
b
0.690
0.520
䃥
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
D2
1
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
b
e
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
D
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
ꢆe7<3
ꢆe7<3
©ꢂ
©ꢃ
D
MILLIMETER
NOM
A2
SYMBOL
MIN
MAX
D1
c1
θ 1
A
A1
A2
A3
b
7.050
0.960
2.250
0.000
7.100
7.150
1.060
2.350
0.100
1.010
2.300
0.050
R
0.760REF.
1.000REF.
0.508REF.
0.508REF.
6.600
b1
c
A1
c1
D
b1
6.550
5.220
0.950
9.700
6.050
6.650
5.420
1.050
10.100
6.150
A3
D1
E
5.320
DETAIL A
c
1.000
b
e
E1
E2
e
9.900
e1
6.100
2.286BSC
4.572REF.
2.800
e1
L
2.650
0.700
2.950
0.900
R1
L1
θ1
R
0.800
7°REF.
1.300REF.
0.250REF.
T’
T
R1
0<=T,T'<=0.12
DETAIL A
5
VER2.5
AGM15T13D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first
version issued on August 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
