AGM-Semi-AGM16N65F
| Part # | AGM-Semi-AGM16N65F |
Download  | AGM-Semi-AGM16N65F |
AGM16N65F
●
General Description
Product Summary
The AGM16N65F combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
switch and battery
BVDSS
RDSON
ID
for load
protection applications.
650V
0.58Ω
16A
●
Features
■
Advance high cell density Trench technology
TO-220F Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
Electronic Ballast
■
Electronic Transformer
■
Switch Mode Power Supply
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM16N65F
AGM16N65F
TO-220F
1000
Tabl
e
1
.
Absolute Maximum Ratings (Tc=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
650
±30
16
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
6.4
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
64
53
21
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
460
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
62.5
2.36
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.4
AGM16N65F
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TC=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
D
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
DSS
DSS
650
—
—
—
1
V
—
—
=650V,V =0V
GS
μA
I
I
=±30V,V =0V
DS
—
nA
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
3.0
—
—
—
4.0
—
V
S
g
FS
=15V,I =8A
D
Forward Transconductance
DS
GS
GS
=10V, I
=8A
D
—
—
Ω
Ω
0.58 0.65
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=8A
D
—
—
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
iss
pF
pF
pF
2063
204
29
VDS=25V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
54
40
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VDD=325V,
ID=16A
,RGEN=25Ω
d(off)
312
66
74
t
f
Q
g
VGS=10V,
VDS=520V, ID=16A
Q
gs
gd
10
40
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
TC=25
℃
—
—
—
—
I
16
A
SD
Forward on Voltage
VGS=0V,ISD=8A, TJ=25
℃
V
SD
1.4
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
682
4.5
—
—
Vgs=0V,IF=16A ,
dI/dt=100A/µs
nc
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.4
AGM16N65F
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics (T
J
= 25ºC)
Figure 2. Body Diode Forward Voltage
25
10
2
20V
10V
8V
7V
6V
5V
20
15
10
5
T
J
= 150
º
C
10
1
10
0
T
J
= 25
º
C
0
10
-1
0
2
4
6
8
10 12 14 16 18 20
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
V
SD
, Source-to-Drain Voltage (V)
Figure 4. BV
DSS
Variation vs. Temperature
18
1.2
16
14
12
10
8
V
GS
= 0V I
D
=250uA
1.15
1.1
1.05
1
6
4
0.95
0.9
2
0
0
30
60
90
120
150
-50 -25
0
25
50
75 100
125 150
T
C
, Case Temperature (A)
T
C
, Case Temperature (
º
C)
Figure 5. Transfer Characteristics
Figure 6. On-Resistance vs. Temperature
3
2.5
2
16
14
12
10
8
V
GS
= 10V I
D
= 8A
T
J
= 25
º
C
T
J
= 150
º
C
1.5
1
6
4
0.5
0
2
0
-75
-25
25
75
125
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
º
C)
3
VER2.4
AGM16N65F
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Capacitance
Figure 8. Gate Charge
10
4
V
DD
= 130V
V
DD
= 325V
V
DD
= 520V
10
3
10
2
10
1
C
iss
C
oss
C
rss
V
GS
= 0V
f = 1MHz
10
0
V
DS
, Drain-to-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
Figure 9. Transient Thermal Impedance
10
1
10
0
D = 0.5
D = 0.2
10
-1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
p
, Pulse Width (s)
4
VER2.4
AGM16N65F
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
5
VER2.4
AGM16N65F
TO-220F Package Mechanical Data
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.50
0.74
0.47
2.45
2.60
8.80
9.80
6.40
Max.
Min.
0.177
0.029
0.019
0.096
0.102
0.346
0.386
0.252
Max.
A
4.90
0.83
0.65
2.75
3.00
9.30
10.4
6.80
0.193
A
B
E
C2
0.80
0.031 0.033
0.026
0.108
0.118
0.366
0.410
0.268
0.1
C
C2
C3
D
E
C3
F
L2
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
B
C
G
3.30
45°
6
VER2.4
AGM16N65F
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on February 10, 2023. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.4
