AGM-Semi-AGM206MAP
| Part # | AGM-Semi-AGM206MAP |
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AGM206MAP
●
General Description
Product Summary
The AGM206MAP combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
This device is ideal
protection applications.
for load switch and battery
BVDSS
RDSON
ID
●
Features
20V
4.5mΩ
25A
■
Advance high cell density Trench technology
PDFN3*3
Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AAGM206MAP
AGM206MAP
PDFN3*3
5000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Value
Unit
VDS
VGS
Drain-Source Voltage (VGS=0V
）
V
V
20
Gate-Source Voltage (VDS=0V)
±20
(Note 1)
25
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
—
64
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
3.0
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
1.2
(Note 3)
EAS
T ,T
mJ
℃
32
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
R
—
—
42
—
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM206MAP
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
20
—
22
—
V
DSS
DSS
=20V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
—
±100
GSS
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
0.6
—
0.8
1.2
—
V
S
g
FS
=5V,I =10A
D
Forward Transconductance
DS
GS
GS
30
4.5
5.0
=4.5V, I
=10A
D
—
—
mΩ
mΩ
7.0
8.5
R
Drain-Source On-State Resistance
DS(on)
=2.5V, I
=5.5A
D
Dynamic Characteristics
—
—
—
—
—
—
1310
232
200
—
C
C
C
Input Capacitance
iss
pF
pF
pF
VDS=10V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
VGS
VDS
Rg
Gate resistance
—
—
Ω
=0V,f=1.0MHz
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
2.5
7.2
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=10V,
RL=1Ω,RGEN=3Ω
d(off)
49
t
f
10.8
17.5
1.5
Q
g
VGS=4.5V,
VDS=10V, ID=10A
Q
gs
gd
Q
4.5
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
25
I
A
SD
Forward on Voltage
VGS=0V,IS=10A
V
SD
1.2
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=10A , dI/dt=100A/µs ,
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM206MAP
Test Circuit
1) E
AS
test Circuits
2) Gate charge test Circuit
3) Switch Time Test Circuit
3
VER2.5
AGM206MAP
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
4
VER2.5
AGM206MAP
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
5
VER2.5
AGM206MAP
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
6
VER2.5
AGM206MAP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on June 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
8
VER2.5
