AGM-Semi-AGM20T09LL
| Part # | AGM-Semi-AGM20T09LL |
Download  | AGM-Semi-AGM20T09LL |
AGM20T09LL
●
General Description
Product Summary
The AGM20T09LL combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
device is ideal
protection applications.
This
for load switch and battery
BVDSS
RDSON
ID
110A
200V
8.3mΩ
●
Features
■
Advance high cell density Trench technology
TOLL-8L Pin
Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
■
■
G
●
Application
■
MB/VGA Vcore
Pin
1
Description
Gate(G)
nd
■
■
■
SMPS 2
Synchronous Rectifier
S
POL application
2,3,4,5,6,7,8 Source(S)
Drain(D)
9
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
25mm
AGM20T09LL
AGM20T09LL
TOLL-8L
330mm
2000
Table 1.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
200
±20
110
75
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
440
278
111
580
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol
℃
-55 To 150
Table 2.
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
62
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
0.45
1
VER2.5
AGM20T09LL
Table 3.
Symbol
Electrical Characteristics (Tj=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
200
—
V
=200V,V =0V
GS
1.0
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2.0
—
—
5
4.0
—
V
S
g
FS
=5V,I =35A
D
Forward Transconductance
Drain-Source On-State Resistance
DS
GS
R
DS(on)
—
m
Ω
V
=10V, I
=35A
D
8.3
10.5
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
10656
16
VDS=100V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
389
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
46
24
88
18
145
49
27
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=100V,
ID=55A,RGEN=4.7Ω
d(off)
t
f
Q
Q
g
VGS=10V,
VDS=100V, ID=55A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
110
I
A
SD
Forward on Voltage
VGS=0V,IS=50A
V
SD
—
1.2
—
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
185
469
IF=50A , dI/dt=100A/µs
rr
nc
Q
—
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM20T09LL
Test Circuits and Waveforms
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
5
VER2.5
AGM20T09LL
TOLL-8L Package
D
D2(2
x
)
MILLIMETER
NOM.
SYMBOL
MIN.
2.200
1.700
0.600
9.700
0.650
1.100
0.400
10.300
11.000
3.200
4.470
9.800
8.000
0.500
MAX.
2.400
1.900
0.800
9.900
0.850
1.300
0.600
10.500
11.200
3.400
4.670
10.000
8.200
0.700
A
A1
b
2.300
1.800
0.700
9.800
0.750
1.200
0.500
10.400
11.100
3.300
b1
b2
b3
c
L2
D4
L1
D
H
D1
D2
©
D4
E
4.570
9.900
i
E1
E2
e
8.100
0.600
1.200 BSC
1.225 BSC
11.700
e1
H
L
H1
H2
11.600
11.800
L3
H1
H2
i
6.950 BSC
5.900 BSC
0.100 REF.
0.350 REF.
3.100 REF.
j
K
L
1.550
0.600
0.500
0.400
1.650
0.700
0.600
1.750
0.800
0.700
0.600
L1
L2
L3
Q
0.500
7.950 REF.
3.100
ꢀꢁe5()ꢂ
R
©
3.000
3.200
K
D1
7
VER2.5
AGM20T09LL
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on August 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
8
VER2.5
