AGM-Semi-AGM25N15C
| Part # | AGM-Semi-AGM25N15C |
Download  | AGM-Semi-AGM25N15C |
AGM25N15C
●
General Description
Product Summary
BVDSS
The AGM25N15C combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
switch and battery
for load
RDSON
20.5mΩ
TO-220C Pin Configuration
ID
protection applications.
150V
52A
●
Features
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM25N15C
AGM25N15C
TO-220C
1000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Value
Unit
VDS
VGS
Drain-Source Voltage (VGS=0V
）
V
V
150
±25
52
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
27
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
180
DM (pluse)
w
w
125
50
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
361
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
60
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
1.0
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM25N15C
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
150
—
V
DSS
DSS
=150V,V =0V
GS
μA
nA
I
I
=±25V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2.5
—
3.0
4.0
—
V
S
g
FS
=5V,I =20A
—
Forward Transconductance
DS
GS
GS
D
=10V, I
=30A
D
—
—
mΩ
mΩ
20.5
—
30
—
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=30A
D
Dynamic Characteristics
—
—
—
—
—
—
850
75
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=75V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
15
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
Ω
—
1.0
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
8.3
6.9
14
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=75V,
ID=30A,
RGEN=6Ω
d(off)
t
f
7.0
8.3
7.1
14
Q
g
VGS=10V, VDS=75V,
ID=9A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
52
A
SD
Forward on Voltage
VGS=0V,IS=9A
V
SD
—
150
150
1.2
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=9A , dI/dt=500A/µs ,
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM25N15C
Typical Characteristics
3.9
3.6
3.3
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
100
Notes:
1. 250μs pulse test
2. T
j
=25°C
10V,
I
DS
= 250uA
9V,
8V,
7V,
6V
75
50
25
0
Max
Typ
Min
V
GS
= 5V
V
GS
= 4.5V
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
10
VDS, Drain -Source Voltage (V)
Tj – Junction Temperature (°C)
Fig1.
Typical Output Characteristics
Fig2.
Typical
V
GS(TH)
Gate -Source Voltage Vs. Tj
100
3.0
V
DS
=5V
80
60
40
20
0
2.5
V
GS
= 10V
I
D
= 30A
2.0
1.5
1.0
0.5
125
°
C
25
°
C
0
25
50
75
100 125 150
175 200
0
1
2
3
4
5
6
7
8
9
10
Tj – Junction Temperature (°C)
VGS, Gate -Source Voltage (V)
Fig4.
Typical Normalized On-Resistance Vs. Tj
Fig3.
Typical Transfer Characteristics
30
100
I
DS
= 30A
25
20
75
50
V
GS
=10V
15
10
5
125
°
C
25
0
25
°
C
0
10
15
20
25
30
35
40
0
2
4
6
8
10
12
ID, Drain-Source Current (A)
Fig6.
Typical
On Resistance Vs Drain Current
VGS, Gate -Source Voltage (V)
Fig5.
Typical
On Resistance Vs Gate -Source Voltage
3
VER2.5
AGM25N15C
Typical Characteristics
100
100
10
1
10µs
100µs
1ms
10
Tj=125
°
C
Tj=25
°
C
10ms
DC
1
T
C
=25°C
0.1
0.1
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VDS, Drain -Source Voltage (V)
VSD, Source-Drain Voltage (V)
Fig8.
Maximum Safe Operating Area
Fig7.
Typical Source-Drain Diode Forward Voltage
10
10000
V
DS
= 75V
Ciss
I
D=
30A
8
6
4
2
0
1000
Coss
100
Crss
10
Frequency=1 MHZ
1
0.1
1
10
100
0
10
20
30
40
50
Qg – Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Fig10.
Typical Gate Charge Vs. Gate-Source
Voltage
Fig9.
Typical Capacitance Vs. Drain-Source Voltage
80
240
silicon limited
200
160
120
80
60
40
20
40
I
D
=f(T
C
);V
GS
≥10V
P
tot
=f(T
C
)
0
0
0
25
50 75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
T
C
– Case
T
emperature (°C)
T
C
– Case
T
emperature (°C)
Fig12.
Maximum Drain Current Vs.
Case
T
emperature
Fig11.
Power Dissipation Vs.
Case
T
emperature
4
VER2.5
AGM25N15C
Typical Characteristics
10
In descending order
D
=
T
on
/T
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
T
J
,
PK
=
T
C
+
P
DM
.
Z
θJC
.
R
θJC
R
θJC
=
0.65
°
C/W
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Fig13 .
Normalized Maximum Transient Thermal Impedance
Fig14.
Unclamped Inductive Test Circuit and waveforms
Fig15.
Switching Time Test Circuit and waveforms
5
VER2.5
AGM25N15C
TO220 PACKAGE INFORMATION
Dimensions In Millimeters
Dimensions In Inches
Symbol
MAX
10.300
8.840
1.250
5.300
16.200
4.680
1.500
1.000
3.800
9.300
0.600
2.700
13.600
1.500
2.590
MIN
9.700
8.440
1.050
5.100
15.400
4.280
1.100
0.600
3.400
8.700
0.400
2.100
12.800
1.100
2.490
MAX
0.406
0.348
0.049
0.209
0.638
0.184
0.059
0.039
0.150
0.366
0.024
0.106
0.535
0.059
0.102
MIN
0.382
0.332
0.041
0.201
0.606
0.169
0.043
0.024
0.134
0.343
0.016
0.083
0.504
0.043
0.098
A
A1
A2
A3
B
C
C1
D
E
G
H
K
L
M
N
T
W0.35
W0.014
DIA
Φ1.5 TYP.
deep0.2 TYP.
Φ0.059 TYP.
deep0.008 TYP.
6
VER2.5
AGM25N15C
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
