AGM-Semi-AGM3015A

AGM3015A  

●

General Description  

Product Summary  

The AGM3015A combines advanced trench MOSFET  

to provide  

technology with a low resistance package  

extremely low R

DS(ON)  

.

This device is ideal  

for load switch and battery  

BVDSS  

RDSON  

ID  

protection applications.  

30V  

1.3mΩ  

136A  

●

Features  

PDFN5*6 Pin Configuration  

■

Advance high cell density Trench technology  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

■

Low Thermal resistance  

●

Application  

■

MB/VGA Vcore  

nd  

■

■

■

SMPS 2

 

Synchronous Rectifier  

POL application  

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

12mm  

AGM3015A  

AGM3015A  

PDFN5*6  

330mm  

3000  

Table 1.  

Absolute Maximum Ratings (TC=25  

)

℃

Symbol  

Parameter  

Drain-Source Voltage (VGS=0V

）

 

Gate-Source Voltage (VDS=0V)  

Value  

Unit  

VDS  

VGS  

V

V

30  

±20  

136  

86  

(Note 1)  

Drain Current-Continuous(Tc=25

℃

)  

A

A

A

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

540  

63  

w

w

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

25  

(Note 3)  

EAS  

T ,T  

mJ  

℃

61  

Avalanche energy  

J

STG  

Operating Junction and Storage Temperature Range  

-55 To 150  

Table 2.  

Thermal Characteristic  

Symbol  

Typ  

Max  

Unit  

Parameter  

1

—  

—  

R

θJA  

℃

/W  

℃

/W  

65  

Thermal Resistance Junction-ambient (Steady State)  

1

R

θJC  

Thermal Resistance Junction-Case  

2.0  

1

VER2.5  

AGM3015A  

Table 3.  

Symbol  

Electrical Characteristics (TC=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

On/Off States  

BV  

DSS  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

—  

—  

—  

—  

1

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

30  

—  

V

=24V,V =0V  

GS  

μA  

nA  

I

I

DSS  

=±20V,V =0V  

DS  

—  

±

GSS  

100  

V

V

V

V

V

=V ,I

 

=250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

1.2  

—  

1.6  

95  

2.5  

—  

V

S

g

FS  

=5V,I =20A  

D

Forward Transconductance  

DS  

GS  

GS  

=10V, I

 

=20A  

D

—  

—  

m

Ω

Ω

1.3  

1.5  

R

Drain-Source On-State Resistance  

DS(on)  

=4.5V, I

 

=15A  

D

2.4  

m

2.1  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

C

C

C

Input Capacitance  

pF  

iss  

2091  

1539  

147  

VGS=0V,  

Output Capacitance  

oss  

rss  

VDS=15V,

F=1MHZ  

pF  

pF  

Reverse Transfer Capacitance  

=0V,  

=0V,f=1.0MHz  

VGS  

VDS  

—  

—  

Rg  

Gate resistance  

Ω

1.2  

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

6.2  

7.8  

35  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=10V,VDS=15V,  

RL=0.75Ω,RGEN=6Ω  

d(off)  

t

f

20  

Q

Q

g

32  

VGS=10V, VDS=15V,  

ID=20A  

gs  

gd  

15.4  

4.4  

Q

Source-Drain Diode Characteristics  

VG=VD=0V , Force

Current  

VGS=0V,IS=20A  

I

SD  

Source-Drain Current(Body Diode)  

Forward on Voltage  

—  

—  

—  

136  

1.2  

A

V

—  

40  

35  

V

SD  

ns  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

—  

—  

IF=20A , dI/dt=100A/µs ,  

nc  

TJ=25

℃  

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.5  

AGM3015A  

Typical Electrical & Thermal Characteristics  

30  

24  

18  

12  

6

150  

V

V

GS

= 3.5V  

V

DS

= 5.0V  

V

GS

= 5.0V  

V

GS

= 4.5V  

V

GS

= 4.0V  

120  

90  

60  

30  

0

T

J

= 125°C  

V

GS

= 3.0V  

T

J

= 25°C  

V

GS

= 2.7V  

V

GS

= 2.5V  

0

1

1.5  

2

2.5  

V

GS

(V)  

3

3.5  

0

0.6  

1.2  

1.8  

V

DS

(V)  

2.4  

3

100  

1.2  

Figure 1:

 

Saturation Characteristics  

Figure 2:

 

Transfer Characteristics  

4

3.2  

2.4  

1.6  

0.8  

0

2.5  

2

V

GS

= 10V  

I

D

= 20A  

V

GS

= 4.5V  

1.5  

1

V

GS

= 10V  

V

GS

= 4.5V  

I

D

= 15A  

0.5  

0

0

20  

40  

60  

80  

-50  

0

50  

100  

150  

Temperature (



C)  

I

D

(A)  

Figure 4:

 

R

DS(ON)

vs. Junction Temperature  

Figure 3:

 

R

DS(ON)

vs. Drain Current  

100  

10  

10000  

1000  

100  

10  

C

iss  

C

oss  

T

J

= 125°C  

1

C

rss  

0.1  

T

J

= 25°C  

0.01  

0.001  

1

0

6

12  

18  

V

DS

(V)  

24  

30  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

V

SD

(V)  

Figure 5:

 

Body-Diode Characteristics  

Figure 6:

 

Capacitance Characteristics  

3

VER2.5  

AGM3015A  

Typical Electrical & Thermal Characteristics  

75  

60  

45  

30  

15  

0

150  

120  

90  

60  

30  

0

0

25  

50  

75  

100  

125  

150  

0

25  

50  

75  

100  

125  

150  

T

CASE

(



C)  

T

CASE

(



C)  

Figure 7:

 

Current De-rating  

Figure 8:

 

Power De-rating  

1000  

100  

10  

500  

400  

300  

200  

100  

0

Limited by  

R

DS(ON)  

1.0



s  

10



s  

100



s  

1.0ms  

10ms  

DC  

1

T

J_Max

= 150°C  

T

C

= 25°C  

0.1  

0.01  

0.0001  

0.001  

0.01  

0.1  

1

10  

0.1  

1

10  

100  

V

DS

(V)  

Pulse Width (s)  

Figure 9:

 

Maximum Safe Operating Area  

Figure 10:

 

Single Pulse Power Rating, Junction-to-Case  

10  

Duty Cycle = T

on

/T

Peak  

T

J

= T

C

+ P

D

x Z



JC

x R



JC  

R



JC

= 1.5

°

C/W  

1

0.1  

Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

Pulse Width (s)  

Figure 11:

 

Normalized Maximum Transient Thermal Impedance  

4

VER2.5  

AGM3015A  

R

DS

)

vs. V

GS  

Gate Charge  

(

ON  

10  

8

10  

8

I

D

= 20A  

V

DS

= 15V  

I

6

6

4

4

2

2

0

0

2

4

6

8

10  

12  

0

7

14  

21  

Q

g

(nC)  

28  

35  

V

GS

(V)  

5

VER2.5  

AGM3015A  

PDFN5*6 Package Outline Data  

MILLIMETER  

Typ.  

SYMBOL  

MIN  

MAX  

A

A1  

A2  

D

0.900  

1.000  

1.100  

0.254 REF.  

0~0.05  

4.900  

D2  

D

4.824  

3.910  

4.924  

5.924  

3.375  

5.674  

0.350  

4.976  

4.110  

5.076  

6.076  

3.575  

5.826  

0.450  

D1  

D2  

E

4.010  

5.000  

6.000  

D1  

E1  

E2  

b

3.475  

5.750  

0.400  

e

1.270 TYP.  

0.610  

L

0.534  

0.424  

0.686  

0.576  

L1  

L2  

k

0.500  

1.800 REF.  

1.290  

1.190  

0.549  

ꢀe  

1.390  

0.701  

ꢁꢂe  

e

b

H

0.625  

©

¶

d

ꢁꢃe  

1.100  

1.200  

1.300  

0.100  

©

6

VER2.5  

AGM3015A  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the first version issued on March 20th, 2023. This document  

replaces andReplace all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

7

VER2.5