AGM-Semi-AGM304AP
| Part # | AGM-Semi-AGM304AP |
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AGM304AP
●
General Description
Product Summary
The AGM304AP combines advanced trench MOSFET
to
technology with a low resistance package
provide
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
load switch and battery
for
protection applications.
●
Features
30V
4.2mΩ
40A
PDFN3.3*3.3 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
AGM304AP
AGM304AP
PDFN3.3*3.3
330mm
12mm
5000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
30
±20
Gate-Source Voltage (VDS=0V)
(Note 1)
40
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
28
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
160
w
w
45
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
18
(Note 3)
EAS
T ,T
mJ
28.8
-55 To 150
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
℃
/W
℃
/W
θJA
Thermal Resistance Junction-ambient (Steady State)
50
1
R
θJC
Thermal Resistance Junction-Case
2.8
1
VER2.67
AGM304AP
Table 3.
Symbol
Electrical Characteristics (T =25
unless otherwise noted)
℃
J
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
30
—
V
DSS
=30V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
—
2.1
—
V
S
—
g
FS
=5V,I =10A
D
Forward Transconductance
DS
GS
GS
12
=10V, I
=20A
D
—
—
mΩ
mΩ
4.2
7.0
5.0
9.0
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
Dynamic Characteristics
—
—
—
—
—
—
814
498
98
C
C
C
Input Capacitance
Output Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
Rg
Switching Times
Turn-on Delay Time
=0V,
=0V,f=1.0MHz
VGS
VDS
—
—
Ω
1.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
7.1
40
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V,
RL=0.75Ω,RGEN=3.3Ω
d(off)
15
t
f
6
Q
Q
g
8.0
2.4
3.2
VGS=10V, VDS=15V,
ID=10A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
VG=VD=0V , Force Current
VGS=0V,IS=20A
I
—
—
—
—
28
A
SD
Forward on Voltage
V
SD
1.2
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=20A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.67
AGM304AP
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3
VER2.67
AGM304AP
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
VER2.67
AGM304AP
●Dimensions
（
PDFN
3
.
3
×
3
.
3
）
MILLIMETER
Typ.
b
SYMBOL
D
MIN
MAX
A
A1
A2
D
0.700
0.800
0.900
0.152 REF.
0~0.05
3.100
D1
3.000
2.300
2.900
3.150
1.320
0.200
0.550
0.300
0.180
3.200
2.600
3.100
3.450
1.720
0.400
0.750
0.500
0.480
D1
E
2.450
3.000
E1
E2
b
3.300
1.520
0.300
e
0.650
L
0.400
L1
L2
L3
H
0.330
L3
L2
0~0.100
0~0.100
0.415
e
0.315
0.515
©
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©
5
VER2.67
AGM304AP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the fourth version issued on May 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.67
