AGM-Semi-AGM306D
| Part # | AGM-Semi-AGM306D |
Download  | AGM-Semi-AGM306D |
AGM306D
●
General Description
Product Summary
The AGM306D combines advanced trenc
h
M
OSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
30V
5.7mΩ
60A
●
Features
■
Advance high cell density Trench technology
TO-252 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—–
—–
AGM306D
AGM306D
TO-252
2500
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
30
±20
Gate-Source Voltage (VDS=0V)
(Note 1)
60
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
39
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
200
DM (pluse)
w
w
51
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
12
(Note 3)
EAS
T ,T
mJ
35
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
35
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
2.5
1
VER2.5
AGM306D
Table 3.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
30
—
V
DSS
DSS
=30V,V =0V
GS
1.0
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
1.6
21
2.1
—
V
S
g
FS
=5V,I =20A
D
Forward Transconductance
DS
GS
GS
—
—
—
=10V, I
=20A
D
5.7
9.5
7.5
14
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
Dynamic Characteristics
—
—
—
—
—
—
1050
165
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
147
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
Ω
6.0
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
9
27
36
—
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V
RL=0.75Ω,RGEN=3.3Ω
d(off)
t
f
Q
Q
g
34
6
VGS=10V, VDS=25V,
ID=12A
gs
gd
Q
12
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
60
1.2
—
A
SD
—
—
—
—
Forward on Voltage
VGS=0V,IS=20A
V
SD
V
ns
t
—
—
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=20A , dI/dt=100A/µs ,
nc
TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2
VER2.5
AGM306D
AGM
3
06D
Test Circuit
1
)
E
AS
T
e
st Circuits
2
)
Gate Charge Test Circuit:
3)
Switch Time Test Circuit
：
3
VER2.5
AGM306D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
VDS Drain-to-Source Voltage(V)
VGS Gate-to-Source Voltage(V)
Figure 4. Drain Current
Figure 3. Max BV
DSS
vs Junction Temperature
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure 5. V
GS(th)
vs Junction Temperature
Figure 6. R
DS(ON)
vs Junction Temperature
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
4
VER2.5
AGM306D
Figure 7. Gate Charge Waveforms
Figure 8. Capacitance
Qg(nC)
VDS Drain-to-Source Voltage(V)
Figure 9. Body-Diode Characteristics
Figure 10. Maximum Safe Operating Area
Vsd (V)
VDS Drain-to-Source Voltage(V)
Figure 11. Normalized Maximum Transient Thermal Impedance
5
VER2.5
AGM306D
●
Dimensions
SYMBOL
min
max
2.50
0.80
0.70
6.75
6.30
10.60
1.75
0.23
SYMBOL
min
0.85
0.50
0.45
5.10
2.25
4.45
0.60
max
1.25
0.90
0.70
5.50
2.35
4.75
1.10
A
b
2.10
0.50
0.45
6.30
5.30
9.20
0.90
0.00
B
b1
C
b2
D
D1
e1
e2
L3
E
L1
L2
K
6
VER2.5
AGM306D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
