AGM-Semi-AGM306MA
| Part # | AGM-Semi-AGM306MA |
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AGM306MA
●
General Description
Product Summary
The AGM306MA combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
switch and battery
This device is ideal
for load
protection applications.
30V
6.8mΩ
40A
●
Features
PDFN5*6 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM306MA
AGM306MA
PDFN5*6
3000
Table 1.
Absolute Maximum Ratings (Tc=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
30
±20
40
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
30
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
99
DM (pluse)
w
w
80
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
32
(Note 3)
EAS
T ,T
mJ
℃
99
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
50
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
1.5
Thermal Resistance Junction-Case
1
VER2.5
AGM306MA
Table 3.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
V
V
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
30
—
V
DSS
DSS
=30V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
2.1
—
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
1.4
7
V
S
g
FS
=10V,I =6A
D
Forward Transconductance
DS
GS
GS
—
—
—
=10V, I
=10A
D
mΩ
mΩ
6.8
9.5
9.0
14
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=10A
D
Dynamic Characteristics
—
—
—
—
—
—
1150
150
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
110
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
1.7
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4.5
11
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=12V,
ID=5A,RGEN=3.3Ω
d(off)
25
t
f
9.6
23
Q
Q
g
VGS=10V, VDS=25V,
ID=10A
gs
gd
3.0
6.0
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
40
A
SD
Forward on Voltage
VGS=0V,IS=10A
V
SD
1.2
6.5
7.0
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=15A , dI/dt=100A/µs ,
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM306MA
Fig.1 Power Dissipation Derating Curve
Fig.2 Typical output Characteristics
1.2
1
50
V
GS
=10V
0.8
0.6
0.4
0.2
0
V
GS
=4.5V
25
0
0
0.5
1
1.5
2
Drain-Source voltage (V)
0
50
100
150
200
Temperature (
。
C)
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
2.5
2
20
10
0
1.5
1
0.5
0
-50
50
150
0
10
20
30
Junction Temperature
Drain Current(A)
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
1.5
14
12
10
8
1
6
4
2
0
0.5
3
5
7
9
-50
0
50
100
150
V
GS
( V )
Temperature
3
VER2.5
AGM306MA
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche
Measurement Circuit
Fig.12 Avalanche
Waveform
4
VER2.5
AGM306MA
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
5
VER2.5
AGM306MA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
