AGM-Semi-AGM306MBP
| Part # | AGM-Semi-AGM306MBP |
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AGM306MBP
●
General Description
Product Summary
The AGM306MBP combines advanced trench
MOSFET technology with a low resistance package
to
provide extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
load switch and battery
for
protection applications.
●
Features
30V
6.0mΩ
46A
PDFN3.3*3.3 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D2
D2
D1
D1
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
G2
S2
G1
nd
■
■
■
S1
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
AGM306MBP
PDFN3.3*3.3
330mm
12mm
5000
AGM306MBP
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
30
±20
(Note 1)
46
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
29
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
184
w
w
20
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
8.0
(Note 3)
EAS
T ,T
mJ
67
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
℃
/W
℃
/W
θJA
Thermal Resistance Junction-ambient (Steady State)
63
1
R
θJC
Thermal Resistance Junction-Case
6.2
1
VER2.5
AGM306MBP
Table 3.
Symbol
Electrical Characteristics (T =25
unless otherwise noted)
℃
J
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
30
—
V
DSS
=30V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
—
2.1
—
V
S
1.4
18
g
FS
=5V,I =8A
Forward Transconductance
DS
GS
GS
D
=10V, I
=12A
D
—
—
mΩ
mΩ
6.0
8.0
7.8
11
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=8A
D
Dynamic Characteristics
—
—
—
—
—
—
1070
163
C
C
C
Input Capacitance
Output Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
110
Rg
Switching Times
Turn-on Delay Time
=0V,
=0V,f=1.0MHz
VGS
VDS
—
—
Ω
1.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4.5
10.8
22.5
9.6
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=12V,
RL=0.75Ω,RGEN=3.3Ω
d(off)
t
f
Q
Q
g
12.8
3.3
VGS=4.5V,
VDS=20V, ID=12A
gs
gd
Q
6.5
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
VG=VD=0V , Force Current
VGS=0V,IS=12A
I
—
—
—
—
46
A
SD
Forward on Voltage
V
SD
1.2
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=12A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM306MBP
Typical Characteristics
12
11
9
12
10
8
I
D
=12A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
6
4
8
2
6
0
2
4
6
8
10
0
0.25
0.5
0.75
V
GS
(V)
V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
12
V
DS
=20V
I
D
=12A
10
8
6
T
J
=150
℃
T
J
=25
℃
6
4
4
2
2
0
0
0
6
12
18
24
30
0
0.3
0.6
0.9
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
VER2.5
AGM306MBP
10000
1000
100
100.00
10.00
1.00
10us
100us
F=1.0MHz
Ciss
1ms
10ms
100ms
DC
Coss
Crss
0.10
T =25
℃
C
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
VER2.5
AGM306MBP
●Dimensions
（
PDFN
3
.
3
×
3
.
3
）
b
D
MILLIMETER
MIN MAX
0.700 0.900
0.152 REF.
0~0.05
3.000
SYMBOL
A
A1
A2
D
D1
3.200
1.135
0.480
3.100
3.450
1.935
0.400
0.750
0.500
0.480
D1
D2
E
0.935
0.280
2.900
3.150
1.535
0.200
0.550
0.300
0.180
D2
E1
E2
b
L3
L2
e
e
L
L1
L2
L3
H
0~0.100
0~0.100
0.315
ꢀe
0.515
©
©
ꢁꢂe
5
VER2.5
AGM306MBP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on May 20th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
