AGM-Semi-AGM308AP
| Part # | AGM-Semi-AGM308AP |
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AGM308AP
●
General Description
Product Summary
The AGM308AP combines advanced trench MOSFET
to
technology with a low resistance package
provide
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
load switch and battery
for
protection applications.
●
Features
30V
7.2mΩ
40A
PDFN3*3 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM308AP
AGM308AP
PDFN3*3
5000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
30
±20
(Note 1)
40
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
20
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
88
w
w
24
10
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
33
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
℃
/W
℃
/W
θJA
Thermal Resistance Junction-ambient (Steady State)
—
1
R
θJC
Thermal Resistance Junction-Case
5.26
1
VER2.5
AGM308AP
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
30
—
V
DSS
=30V,V =0V
GS
1.0
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
FS
1.2
—
2.1
—
V
S
1.6
10
g
=10V,I =15A
D
Forward Transconductance
DS
GS
GS
=10V, I
=20A
D
—
—
mΩ
mΩ
7.2
11
9.5
16
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=10A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
Output Capacitance
830
142
119
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
Rg
Switching Times
Turn-on Delay Time
=0V,
=0V,f=1.0MHz
VGS
VDS
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
6
5
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=30V,
ID=2A
,RGEN=3Ω
d(off)
25
7
t
f
Q
Q
g
19
6.3
4.5
VGS=10V, VDS=15V,
ID=20A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
VG=VD=0V , Force Current
VGS=0V,IS=30A
I
—
—
—
—
40
A
SD
Forward on Voltage
V
SD
1.2
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
7
—
—
IF=30A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
6.3
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM308AP
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
100
10V
8V
80
I
D
(A)
100
80
3.5V
5V
60
60
40
20
0
40
20
0
3V
125
℃
25
℃
V
GS
=2.5V
V
GS
(V)
V
DS
(V)
0
2.0
4.0
6.0
8.0
10.0
0
1
2
3
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
I
S
(A)
R
DS(ON)
(mΩ)
14
12
10
8
1000
100
V
GS
=4.5V
150
℃
25
℃
10
1
V
GS
=10V
25
6
4
I
D
(A)
15
V
SD
(V)
1.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
5
10
20
30
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
8
V
DS
=15V
I
D
=20A
10000
C
iss
6
1000
100
C
oss
C
rss
4
2
0
V
DS
(V)
Q
g
(nC)
10
0
0
4
8
10
15
20
5
10
15
20
25
30
0
3
VER2.5
AGM308AP
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
I
D
(A
)
I
D
(A
)
10
3
10
2
48
40
32
24
16
10μs
100μs
1ms
10
1
10
0
10ms
100ms
DC
Limited by R
DS(on)
T
C
=25
℃
Single pulse
8
0
10
-1
Tc (
℃
)
75 100
V
DS
(V)
0.1
1
10
100
0
25
50
125
150
175
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4
VER2.5
AGM308AP
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5
VER2.5
AGM308AP
PDFN3333 Package Outlin
e
D
ata
DIMENSIONS
( unit : mm )
Symbol
Min
0.70
0.10
3.00
—
Typ
0.75
Max
0.80
0.25
3.20
—
Symbol
Min
0.25
3.25
1.78
3.20
2.39
0.30
—
Typ
0.30
3.35
1.88
3.30
2.49
0.39
0.13
*
Max
0.35
3.45
1.98
3.40
2.59
0.50
—
A
b
D
C
0.15
D1
3.10
D2
E
0.13
D3
3.00
3.15
3.20
E1
E2
H
0.65BSC
0.40
e
L
0.30
—
0.50
12°
L1
M
10°
θ
0.15
*
*
Not specified
6
VER2.5
AGM308AP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
