AGM-Semi-AGM30P100A
| Part # | AGM-Semi-AGM30P100A |
Download  | AGM-Semi-AGM30P100A |
AGM30P100A
●
General Description
Product Summary
The AGM30P100A combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
This device is ideal
for load switch and battery
BVDSS
RDSON
ID
protection applications.
-30V
3.7mΩ
-128A
●
Features
■
Advance high cell density Trench technology
PDFN5*6 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device
Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM30P100A
AGM30P100A
PDFN5*6
3000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
-30
±20
-128
-95
-520
100
40
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
—
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
100
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
1.25
Thermal Resistance Junction-Case
1
VER2.5
AGM30P100A
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
-30
—
V
DSS
DSS
=-30V,V =0V
GS
-1.0
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
FS
-1.2
-1.6
-2.5
—
V
S
g
=-5V,I =-6A
D
Forward Transconductance
DS
GS
GS
—
—
—
—
=-10V, I
=-30A
D
mΩ
mΩ
3.7
5.6
5.0
7.2
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-20A
D
Dynamic Characteristics
—
—
—
—
—
—
5700
915
C
C
C
Input Capacitance
pF
pF
pF
iss
Output Capacitance
oss
rss
VDS=-15V,F=1MHZ
Reverse Transfer Capacitance
755
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
8.7
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
14
15
90
34
122
22
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-15V,
ID=-30A,RGEN=3.0Ω
d(off)
t
f
Q
g
VGS=-10V,
VDS=-15V, ID=-30A
Q
gs
gd
Q
32
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
-128
-1.2
A
SD
Forward on Voltage
VGS=0V,IS=-20A
V
SD
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=-30A ,
—
—
19
52
—
—
nc
dI/dt=-500A/µs , TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM30P100A
Typical Characteristics
-VDS,- Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
Tj – Junction
T
e
mperature (°C)
Fig2.
–
V
GS(TH)
Gate -Source Voltage Vs.Tj
-VGS, -Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Tj – Junction
T
e
mperature (°C)
Fig4.
Normalized On-Resistance Vs. Tj
-VSD, -Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
-VDS, -Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
3
VER2.5
AGM30P100A
Typical Characteristics
-VDS , -Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
Qg –
T
o
tal Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and Waveforms
Fig11.
Switching Time Test Circuit and waveforms
4
VER2.5
AGM30P100A
MILLIMETER
Typ.
YMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
5
VER2.5
AGM30P100A
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
