AGM-Semi-AGM30P10S
| Part # | AGM-Semi-AGM30P10S |
Download  | AGM-Semi-AGM30P10S |
AGM30P10S
Product Summary
BVDSS
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
RDSON
ID
–
30V
12m
Ω
-14A
SOP-8 Pin Configuration
D
Description
D
D
AGM30P10S
is the high cell density
trenched P-ch MOSFETs, which provide
excellentRDSON and gate charge for most
of the synchronous buck converter
applications.
G
S
S
S
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
—mm
Quantity
AGM30P10S
AGM30P10S
SOP-8
—mm
3000
●Absolute Maximum Ratings
（
T
C
=25
℃
）
Parameter
Symbol
Rating
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25
℃
)
V
DS
V
GS
-30
±20
V
I
D
-14
-30
A
A
①
I
DM
Pulsed Drain Current
②
Total Power Dissipation
3.6
0.69
W
W
P
D
@TC=25
℃
Total Power Dissipation
P
D
@TA=25
℃
Operating Junction Temperature
Storage Temperature
T
J
T
STG
E
AS
-55 to 150
-55 to 150
100
℃
℃
mJ
Single Pulse Avalanche Energy
●
Thermal resistance
Parameter
Symbol
Unit
Min. Typ.
Max.
②
R
thJC
R
thJA
T
sold
–
–
–
–
–
–
34
Thermal resistance, junction – case
°
C/W
°
C/W
°
C
Thermal resistance, junction – ambient
Soldering temperature, wavesoldering for 10s
180
265
1
VER2.5
AGM30P10S
●Electronic Characteristics
Parameter
Symbol
BV
DSS
Condition
Min.
-30
Typ
Max.
Unit
Drain-Source Breakdown
Voltage
V
GS
=0V,I
D
=-250uA
V
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-30V, V
GS
=0V
V
GS
=±12V ,V
DS
=0V
-1.2
-2.5
-1.0
V
Drain-Source Leakage Current
I
DSS
Gate- Source Leakage Current
I
GSS
uA
nA
±
100
12
V
GS
=-10V, I
D
=-9A
16
23
m
Ω
Static Drain-source On
Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-8A
V
DS
=-10V, I
D
=-5A
18
m
Ω
Forward Transconductance
g
FS
9
s
●Electronic Characteristics
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Ciss
Coss
Crss
–
–
–
–
–
–
Input capacitance
1650
330
f = 1MHz
pF
Output capacitance
Reverse transfer capacitance
220
●
Gate Charge characteristics
(T
a
= 25
℃
)
Parameter
Total gate charge
Symbol
Condition
Min.
Typ
Max.
Unit
Qg
–
–
15
4
–
–
VDD =25V
ID = 8A
Gate – Source charge
Gate – Drain charge
Qgs
nC
VGS = 10V
Qgd
–
6
–
Note:
①
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
;
②
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom
layer 1inch square copper plate
；
2
VER2.5
AGM30P10S
Fig.1 Power Dissipation Derating Curve
Fig.2 Typical output Characteristics
1.2
1
50
V
GS
=-10V
40
0.8
0.6
0.4
0.2
0
30
V
GS
=-4.5V
20
10
0
0
0.5
Drain-Source voltage (V)
1
0
50
100
150
200
Temperature (
。
C)
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Junction Temperature
50
30
20
10
0
-50
150
0
-0.5
-1
-1.5
-2
0
10
20
30
40
Drain Current(A)
-2.5
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
30
1.5
20
10
0
1
0.5
3
5
7
9
-50
0
50
100
150
V
GS
( -V )
Temperature
3
VER2.5
AGM30P10S
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche Measurement Circuit
Fig.12 Avalanche Waveform
4
VER2.5
AGM30P10S
●Dimensions
(SOP8)
SYMBOL
min
TYP
max
SYMBOL
min
max
A
4.80
0.37
5.00
0.47
C
1.30
0.55
0.55
0.05
0.19
1.50
0.75
0.65
0.20
0.23
A1
A2
A3
B
C1
C2
C3
C4
D
1.27
0.41
0.20
1.05
5.80
3.80
6.20
4.00
B1
B2
5.00
D1
0.40
0.62
5
VER2.5
AGM30P10S
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Information furnished in this document is believed to be accurate and reliable.
However,
Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for
the consequences of
use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that
when an agreement is signed, Shenzhen core control source complies with the
agreement.
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Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for
any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the first version which is made in 12-Apr-20. This document
supersedes and
replaces all information previously supplied.
is a registered trademark of Shenzhen Core Control Source
Semiconductor Co., Ltd.
Copyright ©2017 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All
rights reserved.
6
VER2.5
