AGM-Semi-AGM30P16D
| Part # | AGM-Semi-AGM30P16D |
Download  | AGM-Semi-AGM30P16D |
AGM30P16D
●
General Description
Product Summary
The AGM30P16D combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
. This device is ideal
and battery protection applications.
for load switch
BVDSS
RDSON
ID
-30V
16.8mΩ
-25A
●
Features
■
Advance high cell density Trench technology
TO-252 Pin Configuration
Low R
DS(ON)
to minimize conductiveloss
Low Gate Charge for fast switching
■
■
D
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
D
S
POL application
G
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
16mm
330mm
AGM30P16D
AGM30P16D
TO-252
2500
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
V
V
VDS
VGS
-30
±20
-25
15
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
-100
30
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
12
(Note 3)
EAS
T ,T
mJ
℃
—
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
—
1
62
R
℃
/W
℃
/W
θJA
Thermal Resistance Junction-ambient (Steady State)
—
1
R
3.6
θJC
Thermal Resistance Junction-Case
1
VER2.6
AGM30P16D
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
I
V
V
V
=0V I
=250μA
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
-30
—
DSS
V
—
—
=-30V,V =0V
GS
-1.0
μA
nA
DSS
GSS
=±20V,V =0V
DS
—
I
±
100
V
g
V
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
-1.2
—
-1.5
8
-2.1
—
V
S
=-10V,I =-6A
Forward Transconductance
DS
GS
GS
D
FS
=-10V, I
=-10A
D
—
—
16.8
24
23
31
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-6A
D
Dynamic Characteristics
—
—
—
1350
194
158
C
C
C
Input Capacitance
iss
—
—
—
pF
pF
pF
Output Capacitance
oss
rss
VDS=-25V,VGS=0V
F=1MHZ
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
t
10.5
11
—
—
—
—
—
—
—
nS
nS
nS
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-25V,
RL=0.75
Ω,RGEN=3.3Ω
d(off)
51
—
—
—
—
t
f
28
nS
nC
nC
nC
Q
Q
g
14
VGS=-10V,
VDS=-25V, ID=-15A
gs
gd
5.2
5.0
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
-25
-1.2
—
SD
A
Forward on Voltage
VGS=0V,IS=-10A
V
SD
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=-10A , dI/dt=100A/µs ,
—
—
—
—
TJ=25
℃
nc
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes
3.EAS condition: T
=25
℃
J
2
VER2.6
AGM30P16D
Typical Electrical and Thermal Characteristics (Curves)
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
–
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
3
VER2.6
AGM30P16D
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
4
VER2.6
AGM30P16D
TO-252 Package Outline Data
D1
c
2
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
h
A1
b
0.690
0.520
䃥
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
D2
1
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
b
e
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
D
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
ꢆe7<3
ꢆe7<3
©ꢂ
©ꢃ
D
MILLIMETER
NOM
A2
SYMBOL
MIN
MAX
D1
c1
θ 1
A
A1
A2
A3
b
7.050
0.960
2.250
0.000
7.100
7.150
1.060
2.350
0.100
1.010
2.300
0.050
R
0.760REF.
1.000REF.
0.508REF.
0.508REF.
6.600
b1
c
A1
c1
D
b1
6.550
5.220
0.950
9.700
6.050
6.650
5.420
1.050
10.100
6.150
A3
D1
E
5.320
DETAIL A
c
1.000
b
e
E1
E2
e
9.900
e1
6.100
2.286BSC
4.572REF.
2.800
e1
L
2.650
0.700
2.950
0.900
R1
L1
θ1
R
0.800
7°REF.
1.300REF.
0.250REF.
T’
T
R1
0<=T,T'<=0.12
DETAIL A
5
VER2.6
AGM30P16D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the third version issued on March 10th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.6
