AGM-Semi-AGM30P35M
| Part # | AGM-Semi-AGM30P35M |
Download  | AGM-Semi-AGM30P35M |
AGM30P35M
● General Description
Product Summary
The AGM30P35M combines advanced trench
MOSFET technology with a low resistance
to provide extremely low R
DS(ON)
.
BVDSS
RDSON
33mΩ
ID
package
This device is
ideal for load switch and battery
-30V
-5.4A
protection applications.
● Features
SOP8
Pin Configuration
D1 D1 D2 D2
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
■
■
■
■
■
Low
Low Gate Charge for fast switching
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
S1 G1 S2 G2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AGM30P35M
SOP8
AGM30P35M
330mm
12mm
3000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Value
-30
Unit
VDS
VGS
Drain-Source Voltage (VGS=0V
）
V
V
Gate-Source Voltage (VDS=0V)
±20
-5.4
-3.5
-22
2.5
1.0
—
(Note 1)
Drain Current-Continuous(TA=25
℃
)
A
A
A
I
D
A
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
Maximum Power Dissipation(TA=25
℃
)
Maximum Power Dissipation(TA=100
℃
)
P
D
(Note 3)
EAS
Avalanche energy
mJ
℃
T ,T
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
R
θJA
℃
/W
—
50
Thermal Resistance Junction-ambient (Steady State)
1
VER2.5
AGM30P35M
Table 2. P-Channel Electrical Characteristics (TJ=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-30
DSS
—
—
—
V
μA
nA
=-30V,V =0V
GS
-1
—
DSS
=±20V,V =0V
DS
±100
I
—
GSS
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.0
—
-2.1
—
-1.5
—
V
S
=- 5 V ,I
=-4A
Forward Transconductance
FS
DS
GS
GS
D
=-10V, I
=-5A
D
43
70
—
—
33
50
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-4A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
482
70.2
63
pF
pF
pF
VDS=-15V,VGS=0V,
F=1MHZ
oss
Reverse Transfer Capacitance
Gate resistance
rss
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
—
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
10
15
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-15V,
ID=-5A,RGEN=3.0Ω
t
d(off)
18
t
f
12
Qg
10.3
1.0
2.1
VGS=-10V,
VDS=-15V, ID=-5.4A
Q
Q
gs
gd
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
—
—
-5.4
-1.2
—
SD
A
Forward on Voltage
VGS=0V,IS=-5A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-5A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes2.Repetitive Rating
:
P
ulse
width limited by
maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM30P35M
Characteristics Curve
：
Typ. output characteristics
Typ. drain-source on resistance
I
D
=f(V
DS
)
R
DS(on)
=f(I
D
)
Typ. transfer characteristics
Drain-source on-state resistance
R
DS(on)
=f(T
j
);I
D
=-5.1A; V
GS
=-10V
I
D
=f(V
GS
)
3
VER2.5
AGM30P35M
Gate Threshold
V
o
ltage
-V
TH
=f(T
j
); I
D
=-250uA
Drain-source breakdown voltage
V
BR(DSS)
=f(T
j
); I
D
=-250uA
Typ. gate charge
V
GS
=f(Q
gate
); I
D
=-5.4A
T
y
p. capacitances
C =f(V
DS
); V
GS
=0V; f =1MHz
4
VER2.5
AGM30P35M
Power Dissipation
Maximum Drain Current
P
tot
=f(T
C
)
-I
D
=f(T
C
)
Safe operating area
Body Diode Forward
V
o
ltage
V
a
riation
-I
D
=f(-V
DS
)
–
I
F
=f(-V
DS
)
5
VER2.5
AGM30P35M
●Dimensions
(SOP8)
SYMBOL
min
TYP
max
SYMBOL
min
max
A
4.80
0.37
5.00
0.47
C
1.30
0.55
0.55
0.05
0.19
1.50
0.75
0.65
0.20
0.23
A1
A2
A3
B
C1
C2
C3
C4
D
1.27
0.41
0.20
1.05
5.80
3.80
6.20
4.00
B1
B2
5.00
D1
0.40
0.62
7
VER2.5
AGM30P35M
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on July 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
8
VER2.5
