AGM-Semi-AGM30P55D
| Part # | AGM-Semi-AGM30P55D |
Download  | AGM-Semi-AGM30P55D |
AGM30P55D
●
General Description
The AGM30P55D
combines advanced trench
MOSFET technology with a low resistance package
Product Summary
to provide extremely low R
DS(ON)
.
This device is ideal
for load switch and battery
protection applications.
BVDSS
RDSON
ID
●
Features
-30V
5mΩ
-65A
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
TO-252 Pin Configuration
■
■
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device
Marking
Device
Device Package
Reel Size
Tape width
16mm
AGM30P55D
AGM30P55D
TO-252
330mm
2500
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
-30
±20
-65
-39
-260
60
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
24
(Note 3)
EAS
T ,T
mJ
120
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
50
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
2.1
Thermal Resistance Junction-Case
1
VER2.6
AGM30P55D
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
-30
—
V
DSS
DSS
=-30V,V =0V
GS
-1.0
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
FS
-1.2
—
-1.5
19
-2.5
—
V
S
g
=-10V,I =-10A
D
Forward Transconductance
DS
GS
GS
=-10V, I
=-15A
D
—
—
mΩ
mΩ
5.0
8.5
7.0
12
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-10A
D
Dynamic Characteristics
—
—
—
—
—
—
3050
460
C
C
C
Input Capacitance
pF
pF
pF
iss
Output Capacitance
oss
rss
F=1MHZ
Reverse Transfer Capacitance
240
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
14
20
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=20V,
ID=-15A,RGEN=3Ω
d(off)
56
t
f
48
Q
g
28
VGS=-10V,
VDS=-25V, ID=-15A
Q
gs
gd
9.5
10.6
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
-65
I
A
SD
Forward on Voltage
VGS=0V,IS=-15A
V
SD
-1.2
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=-15A , dI/dt=100A/µs ,
—
—
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM30P55D
Fig.1 Power Dissipation Derating Curve
Fig.2 Typical output Characteristics
V
GS
=-10V
V
GS
=-4.5V
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
3
VER2.6
AGM30P55D
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche Measurement Circuit
Fig.12 Avalanche Waveform
4
VER2.6
AGM30P55D
TO-252 Package Outline Data
D1
c
2
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
h
A1
b
0.690
0.520
䃥
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
D2
1
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
b
e
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
D
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
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©ꢂ
©ꢃ
D
MILLIMETER
NOM
A2
SYMBOL
MIN
MAX
D1
c1
θ 1
A
A1
A2
A3
b
7.050
0.960
2.250
0.000
7.100
7.150
1.060
2.350
0.100
1.010
2.300
0.050
R
0.760REF.
1.000REF.
0.508REF.
0.508REF.
6.600
b1
c
A1
c1
D
b1
6.550
5.220
0.950
9.700
6.050
6.650
5.420
1.050
10.100
6.150
A3
D1
E
5.320
DETAIL A
c
1.000
b
e
E1
E2
e
9.900
e1
6.100
2.286BSC
4.572REF.
2.800
e1
L
2.650
0.700
2.950
0.900
R1
L1
θ1
R
0.800
7°REF.
1.300REF.
0.250REF.
T’
T
R1
0<=T,T'<=0.12
DETAIL A
5
VER2.6
AGM30P55D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on July 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.6
