AGM-Semi-AGM312M1
| Part # | AGM-Semi-AGM312M1 |
Download  | AGM-Semi-AGM312M1 |
AGM312M1
●
General Description
Product Summary
The AGM312M1 combines advanced trench
MOSFET technology with a low resistance
package to provide extremely low R
DS(ON)
. This
device is ideal for load switch and battery
protection applications.
BVDSS
30V
RDSON
ID
18
mΩ
30
mΩ
9.0A
-7.2A
-30V
●
Features
■
Advance high cell density Trench technology
■
Low R
DS(ON)
to minimize conductive loss
■
Low Gate Charge for fast switching
■
Low Thermal resistance
SOP-8 Pin Configuration
D1
D2
●
Application
■
MB/VGA Vcore
■
SMPS 2
nd
Synchronous Rectifier
G1
G2
■
POL application
S1
■
BLDC Motor driver
S2
Pac
k
age Mar
k
ing and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SOP-8
325mm
16mm
3000
AGM312M
AGM312M1
Table 1.
Absolute Maximum Ratings (T
A
=25 )
℃
Rating
N-Ch
P-Ch
Units
V
Symbol
V
DS
Parameter
30
-30
Drain-Source Voltage (
V
GS=
0V
）
±20
V
GS
Gate-Source Voltage (
V
DS=
0V)
V
A
A
±20
-7.2
(Note 1)
Drain Current-Continuous(T
c
=25
℃
)
9.0
I
D
IDM (pluse)
P
D
Drain Current-Continuous(Tc=100
℃
)
5.7
-4.7
-19
Drain Current-Continuous@ Current-Pulsed
(Note 2)
24
A
Total Power Dissipation(T
c
=25
℃
)
5
5
W
W
0.2
Total Power Dissipation(TA=100
℃
)
0.2
(Note 3)
25
25
Avalanche energy
EAS
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
—
62
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Case
1
—
24
1
VER2.4
AGM312M1
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
SYMBOL
MIN
TYP
MAX UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
BV
DSS
V
GS(TH)
I
GSS
30
1.2
—
—
1.5
—
—
2.5
±100
1
V
V
nA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, Tc = 125ºC
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 6A
V
DS
= 5V, I
D
= 6A
—
—
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
I
DSS
µA
—
—
10
29
32
—
—
18
22
13
R
DS(on)
m
Ω
—
Forward Transconductance
Dynami
c
(Note 5)
S
g
fs
—
Total Gate Charge
Q
g
Q
gs
Q
gd
—
—
—
—
—
—
4.1
1
—
—
—
—
—
—
V
DS
= 15V, I
D
= 8A,
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
nC
pF
2.1
370
55
32
Input Capacitance
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
Switching
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
t
d(off)
t
f
—
—
—
—
2.8
7.2
—
—
—
—
V
DD
= 15V, I
D
= 1A,
ns
R
GEN
=6
Ω
15.8
4.6
Notes:
1. Current
limited by package
2. Pulse
width limited by the maximum junction temperature
3. L
= 0.1mH, I
AS
= 17A, V
DD
= 25V, R
G
=
25Ω, Start
ing T
J
= 25
o
C
4. Pulse
test: PW
≤
300µs, duty cycle
≤
2%
5. For
DESIGN AID ONLY, not subject to production testing.
6. Switching
time is essentially independent of operating temperature.
2
VER2.4
AGM312M1
N- Channel Typical Electrical and Thermal Characteristics (Curves)
●
Thermal resistance
Parameter
Symbol
Min. Typ.
Max.
Unit
Thermal resistance, junction – case
R
thJC
R
thJA
T
sold
–
–
–
–
34
°
C/W
°
C/W
°
C
Thermal resistance, junction – ambient
Soldering temperature, wavesoldering for 10s
180
–
–
265
●
Electronic Characteristics
Parameter
Symbol
BV
DSS
Condition
Min.
-30
Typ
Max.
Unit
Drain-Source Breakdown
Voltage
V
GS
=0V,I
D
=-250uA
V
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-30V, V
GS
=0V
V
GS
=±12V ,V
DS
=0V
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-10A
V
DS
=-10V, I
D
=-5A
Is=-20A
-1.2
-2.5
-1.0
±
100
42
V
Drain-Source Leakage Current
I
DSS
Gate- Source Leakage Current
I
GSS
uA
nA
3
1
3
9
6
m
Ω
m
Ω
s
Static Drain-source On
Resistance
R
DS(ON)
56
Forward Transconductance
Source-drain voltage
g
FS
V
SD
1.28
V
●Electronic Characteristics
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Input capacitance
C
iss
–
850
–
Output capacitance
C
oss
C
rss
f = 1MHz
–
–
140
103
–
–
pF
Reverse transfer capacitance
●
Gate Charge characteristics(T
a
= 25
℃
)
Parameter
Symbol
Condition
Min.
Typ
Max.
Unit
Total gate charge
Q
g
–
–
13
7
–
–
V
DD
=25V
I
D
= 2A
Gate – Source charge
Q
gs
nC
V
GS
= 10V
Gate – Drain charge
Q
gd
–
2
–
3
VER2.4
AGM312M1
N-CH Electrical Characteristics (TJ=25
℃
, unless otherwise
25
20
15
10
20
16
12
8
V
GS
= 5~10V
V
GS
4V
5
0
4
0
V
GS
3V
5
0
1
2
3
4
6
0
1
2
3
4
5
6
V
DS
, Drain-to-Sourc
e
V
oltage
(V)
Figure 1. Output
Characteristics
V
GS
, Gate-to-Source Voltage
(V)
Figure 2. Transfer
Characteristics
1.1
1.075
1.05
1.025
1
2
V
G
= 10V
I
D
= 6.9A
I
D
= 250uA
1.75
1.5
1.25
1
0.975
0.95
0.925
0.75
0.5
0.25
-50
-25
0
25
50
75 100
125
-50 -25
0
25
50 75
100 125
T
j
, Junction Temperature
(°C)
T
j
, Junction Temperature (°C)
Figure 3. Breakdown Voltage Variation
with
Temperature
Figure 4. On-Resistance Variation with Temperature
V
DS
= 10V
I
D
= 1A
I
D
= 250uA
1.2
1.1
1
6
4
2
0.9
0.8
0.7
0.6
0
0
2
4
6
8
10
-50 -25
0
25
T
j
, Junction Temperature
(°C)
Figure 5. Gate Threshold Variation with Temperature
50
75 100
125
Q
g
, Total Gate Charge
(n
C
)
Figure 6. Gate C
rg
h
a e
4
VER2.4
AGM312M1
20
10
40
20
10
0
.
0012S
0.01S
1
0
.
1S
V
GS
= 10V
Single Pulse
T
A
=25ºC
0.1
DC
1
0.04
0.75 0.85
0.93
1.0
1.06
1.11
0.5
0.1
1
3
10
30 50
V
DS
, Drain-Source Voltage
(V)
Figure 7. Maximum Safe
Operating
Area
V
SD
, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage Variation
with Source Current
V
DD
V
DS
90%
R
L
D
Vout
Vin
G
V
GS
R
GEN
10%
V
GS
S
t
d(on)
t
d(off)
t
r
t
f
Figure 9. Switching Test Circuit and
Switching
Waveforms
2
1
Duty Cycle = 0.5
0.2
0.1
P
DM
0.1
0.05
t
1
t
2
0.02
1. R
th
JA
(t)=r (t) * R
th
JA
2. R
th
JA
=See Datasheet
3. T
JM
– T
A
= P
DM
* R
th
JA
(t)
4. Duty C
y
c
le, D = t
1
/t
2
Single Pulse
0.01
1
0
-4
1
0
-3
1
0
-2
1
0
-1
1
10
100
600
Square Wave Pulse Duration
(sec)
Figure 10. Normalized Thermal Transient Impedance
Curve
5
VER2.4
AGM312M1
●
P Channel characteristics curve
Fig.1 Power Dissipation Derating Curve
Fig.2 Typical output Characteristics
1.2
1
50
V
GS
=-10V
V
GS
=-4.5V
0.8
0.6
0.4
0.2
0
25
0
0
0.5
1
1.5
2
0
50
100
150
200
Temperature (
。
C)
Drain-Source voltage (V)
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Junction Temperature
50
30
20
10
0
-50
150
0
-0.5
-1
-1.5
-2
0
10
20
30
40
Drain Current(-A)
-2.5
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
1.5
40
30
20
10
0
1
0.5
3
5
7
9
-50
0
50
100
150
V
GS
( -V )
Temperature
6
VER2.4
AGM312M1
●
Test Circuit
Fig.1 Switching Time Measurement Circuit
Fig.2 Gate Charge Waveform
Fig.3 Switching Time Measurement Circuit
Fig.4 Gate Charge Waveform
Fig.5 Avalanche
Measurement Circuit
Fig.6 Avalanche
Waveform
7
VER2.4
AGM312M1
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control
E
lectronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control
E
lectronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on
O
ctober 10, 201
9
. This document
replaces and
R
eplace all previously provided information.
It is a registered trademark of Shenzhen Core Control
E
lectronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control
E
lectronics Technology Co., Ltd. all rights
reserved.
9
VER2.4
