AGM-Semi-AGM3400E
| Part # | AGM-Semi-AGM3400E |
Download  | AGM-Semi-AGM3400E |
AGM3400E
●
General Description
Product Summary
The AGM3400E combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
●
Features
30V
20mΩ
5.6A
SOT-23-3 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
3400E
AGM3400E
SOT-23-3
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
30
±12
(Note 1)
Drain Current-Continuous(TA=25
℃
)
5.6
A
A
A
I
D
A
Drain Current-Continuous(T
=70
℃
)
4.5
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
23
DM (pluse)
w
w
1.2
Maximum Power Dissipation(TA=25
℃
)
Maximum Power Dissipation(TA=70
℃
)
P
D
0.8
(Note 3)
EAS
T ,T
mJ
℃
—
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol
-55 To 150
Table 2.
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
104
—
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM3400E
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
V
V
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
30
—
V
=30V,V =0V
GS
μA
nA
I
I
DSS
=±12V,V =0V
DS
—
±
GSS
100
1.5
—
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
0.65
0.9
—
V
S
g
FS
=5V,I =4.2A
D
Forward Transconductance
DS
GS
—
—
=10V, I
=5.6A
D
m
Ω
Ω
Ω
20
23
27
25
31
45
V
V
=4.5V, I
=5.0A
D
—
—
GS
m
m
R
Drain-Source On-State Resistance
DS(on)
=2.5V, I
=3A
D
GS
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
Output Capacitance
pF
iss
630
VDS=15V,VGS=0V,
F=1MHZ
oss
rss
pF
pF
55
71
—
Reverse Transfer Capacitance
Gate resistance
=0V,
=0V,f=1.0MHz
Rg
Switching Times
Turn-on Delay Time
VGS
VDS
—
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4.4
28
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V,
RGEN=3Ω,ID=5.6A
d(off)
16
t
f
26
Q
Q
g
17
VGS=10V, VDS=15V,
ID=5.6A
gs
gd
2.1
2.0
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
5.6
1.2
I
A
SD
Forward on Voltage
VGS=0V,IS=5.6A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
1.1
—
—
rr
IF=5.6A , dI/dt=100A/µs ,
nc
TJ=25
℃
13.1
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM3400E
■ Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
Figure6. Gate Charge
Figure5. Capacitance
Characteristics
3
VER2.5
AGM3400E
Figure7. Safe Operation Area
Figure8. Maximum Continuous Drain Current
vs Ambient Temperature
Figure9. Normalized Maximum Transient Thermal Impedance
4
VER2.5
AGM3400E
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5
VER2.5
AGM3400E
SOT-23-3L
PACKAGE OUTLINE DIMENSIONS
c
D
L1 L
e1
A1
e
b
C
O
MM
O
N DIMENSI
O
NS
CUNI
T
S MEASURE=MILLIME
T
ER
SYMB
O
L
MIN
N
O
M
MAX
A
A1
A
2
b
1.050
0.000
1.050
—— 1.
3
00
—— 0.
2
00
—— 1.
2
00
0.
3
00 0.400 0.500
—— 0.
2
00
2
.900
3
.0
20
c
0.100
D
E
2
.
820
1.500 1.
6
00 1.700
E1
e
2
.
6
50
2
.
8
00
0.950
T
YP
2
.950
2
.000
e1
L
1.
8
00 1.900
0.
6
REf
L1
0.
3
00 0.450 0.
6
00
0°
— 8
°
Unit:mm
6
VER2.5
AGM3400E
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on October 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
