AGM-Semi-AGM3415E
| Part # | AGM-Semi-AGM3415E |
Download  | AGM-Semi-AGM3415E |
AGM3415E
●
General Description
Product Summary
The AGM3415E combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
device is ideal
BVDSS
RDSON
ID
This
for load switch and battery
protection applications.
-20V
28mΩ
-5.0A
●
Features
■
Advance high cell density Trench technology
SOT-23-3 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
3415E
AGM3415E
SOT-23-3
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
-20
±10
-5.0
-3.0
-18
(Note 1)
Drain Current-Continuous(Ta=25
℃
)
A
A
A
I
D
a
Drain Current-Continuous(T
=70
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
1.32
Maximum Power Dissipation(Ta=25
℃
)
P
D
T ,T
J
STG
Thermal Characteristic
Symbol
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Typ
Max
Unit
Parameter
1
—
R
θJA
℃
/W
95
Thermal Resistance Junction-ambient (Steady State)
1
VER2.61
AGM3415E
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
V
V
V
=0V I
=-250μA
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
-20
—
V
=-20V,V =0V
GS
-1
μA
μA
I
I
DSS
=±10V,V =0V
DS
—
±
8
GSS
V
=V ,I
=-250μA
DS GS
D
Gate Threshold Voltage
GS(th)
-0.4
—
-0.7
6
-1.0
—
V
S
g
FS
V
V
=-10V,I =-3A
D
Forward Transconductance
DS
=-4.5V, I
=-4A
D
—
GS
28
35
m
m
Ω
Ω
R
Drain-Source On-State Resistance
DS(on)
V
GS
=-2.5V, I
=-3.0A
D
—
38
53
Dynamic Characteristics
—
—
—
—
C
C
C
Input Capacitance
pF
830
132
85
iss
=0V,
=0V,f=1.0MHz
VDS=-10V,VGS
VDS
Output Capacitance
oss
rss
pF
Ω
Reverse Transfer Capacitance
—
—
Rg
Gate resistance
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nC
nC
nC
10
32
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V, VDS=-4.5V,
ID=-3.3A,RG=1Ω
d(off)
50
t
f
51
Q
Q
g
8.8
1.4
1.9
VGS=-10V,
VDS=-4.5V,ID=-2.0A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
VGS=0V,IS=-4A
—
—
I
—
—
-5.0
-1.2
V
SD
Forward on Voltage
V
SD
IF=-4.1A ,
V
dI/dt=100A/µs ,TJ=25
℃
ns
nc
—
—
—
—
—
—
t
Reverse Recovery Time
Reverse Recovery Charge
rr
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.61
AGM3415E
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
-I
D
(A)
20
-I
D
(A)
20
16
16
GS
V =-
100
℃
4.5V
12
8
GS
12
V =-3V
25
℃
-2V
8
4
0
4
-1.5V
-V
GS
(V)
-V
DS
(
V
)
0
0
1
2
3
4
5
0
0.3 0.6
0.9 1.2
1.5
1.8 2.1 2.4 2.7
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
Figure 4
: Body Diode Characteristics
I
S
(A)
1E+01
1E+00
1E-01
1E-02
60
50
V
GS
=-2.5V
T
J
=125
℃
40
30
20
25
℃
V
GS
=-4.5V
1E-03
1E-04
1E-05
10
0
-V
SD
(V)
-I
D
(A)
3
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
4
5
6
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
-V
GS
(V)
C(pF)
5
4
3
2
420
V
DS
=-10V
I
D
=-4.1A
350
280
210
C
iss
140
C
oss
1
0
70
0
-V
DS
(
V
)
C
rss
Q
g
(nC)
0
1.2
1.4
3.6 4.8
6.0
7.2
8.4
9.6
0
3
6
9
12
15
18
3
VER2.61
AGM3415E
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
2.0
1.3
1.2
1.1
1.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
-I
D
(A
)
-I
D
(A
)
5
100
10
Limited by R
DS
(
on
)
4
3
2
10μ
s
1
0
0μs
1
1m
s
T
C
=25
℃
Single pulse
1
0
D
C
T
A
(
℃
)
-V
DS
(V)
0.1
1
10
0.01
0.1
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
3
10
2
10
1
D=0.5
t1
D=0.2
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
0
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
10
-1
T
P
(
s
)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
4
VER2.61
AGM3415E
SOT-23-3L
PACKAGE OUTLINE DIMENSIONS
c
D
L1 L
e1
A1
e
b
C
O
MM
O
N DIMENSI
O
NS
CUNI
T
S MEASURE=MILLIME
T
ER
SYMB
O
L
MIN
N
O
M
MAX
A
A1
A
2
b
1.050
0.000
1.050
—— 1.
3
00
—— 0.
2
00
—— 1.
2
00
0.
3
00 0.400 0.500
—— 0.
2
00
2
.900
3
.0
20
c
0.100
D
E
2
.
820
1.500 1.
6
00 1.700
E1
e
2
.
6
50
2
.
8
00
0.950
T
YP
2
.950
2
.000
e1
L
1.
8
00 1.900
0.
6
REf
L1
0.
3
00 0.450 0.
6
00
0°
— 8
°
Unit:mm
5
VER2.61
AGM3415E
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on October 15, 2022. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.61
