AGM-Semi-AGM3416EL

AGM3416EL  

●

General Description  

Product Summary  

The AGM3416EL combines advanced trench  

MOSFET technology with a low resistance package  

to provide extremely low R

DS(ON)  

.

This device is ideal  

for load switch and battery  

BVDSS  

RDSON  

ID  

protection applications.  

19.5V  

10mΩ  

6.5A  

●

Features  

SOT-23 Pin Configuration  

■

Advance high cell density Trench technology  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

■

Low Thermal resistance  

●

Application  

■

MB/VGA Vcore  

nd  

■

■

■

SMPS 2

 

Synchronous Rectifier  

POL application  

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

8mm  

3416  

AGM3416EL  

SOT-23  

178mm  

3000  

Table 1.  

Absolute Maximum Ratings (TA=25  

)

℃

Symbol  

Parameter  

Value  

Unit  

VDS  

VGS  

Drain-Source Voltage (VGS=0V

）

 

19.5  

±10  

V

V

Gate-Source Voltage (VDS=0V)  

(Note 1)  

6.5  

Drain Current-Continuous(TA=25

℃

)  

A

A

A

I

D

A

Drain Current-Continuous(T

 

=100

℃

)  

3.9  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

26  

DM (pluse)  

1.2  

w

w

Maximum Power Dissipation(TA=25

℃

)  

P

D

0.48  

Maximum Power Dissipation(TA=100

℃

)  

T ,T  

J

STG  

Operating Junction and Storage Temperature Range  

-55 To 150  

℃

Table 2.  

Thermal Characteristic  

Symbol  

Typ  

Max  

Unit  

Parameter  

1

—  

R

θJA  

℃

/W  

105  

Thermal Resistance Junction-ambient (Steady State)  

1

VER2.6  

AGM3416EL  

Table 3.  

Symbol  

Electrical Characteristics (TA=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

On/Off States  

BV  

DSS  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

—  

—  

—  

—  

1

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

19.5  

—  

V

=19.5V,V =0V  

GS  

μA  

μA  

I

I

DSS  

=±10V,V =0V  

DS  

—  

±

GSS  

10  

V

V

V

V

V

=V ,I

 

=250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

0.5  

—  

0.7  

5

1.0  

—  

V

S

g

FS  

=5V,I =4A  

D

Forward Transconductance  

DS  

GS  

GS  

=4.5V, I

 

=5A  

D

—  

—  

m

Ω

Ω

10  

12  

14  

18  

R

Drain-Source On-State Resistance  

DS(on)  

=2.5V, I

 

=4A  

D

m

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

854  

150  

90  

C

C

C

Input Capacitance  

pF  

iss  

VDS=10V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

pF  

pF  

Reverse Transfer Capacitance  

=0V,  

=0V,f=1.0MHz  

Rg  

Gate resistance  

VGS  

VDS  

—  

—  

—  

Ω

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

11  

34  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=5V,VDS=10V,  

RL=1.5Ω,RGEN=3Ω  

d(off)  

55  

t

f

51  

Q

Q

g

9.1  

1.6  

2.0  

VGS=4.5V,  

VDS=10V, ID=6.5A  

gs  

gd  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

—  

—  

—  

—  

I

6.5  

1.2  

A

SD  

Forward on Voltage  

VGS=0V,IS=5A  

V

SD  

V

ns  

t

—  

—  

—  

—  

—  

—  

Reverse Recovery Time  

Reverse Recovery Charge  

IF=5A , dI/dt=100A/µs ,  

rr  

nc  

TJ=25

℃

 

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.6  

AGM3416EL  

Typical Electrical And Thermal Characteristics (Curves)  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. Power Dissipation  

Figure 4. Drain Current  

Figure 5. BV

DSS

vs Junction Temperature  

Figure 6. R

DS(ON)

vs Junction Temperature  

3

VER2.6  

AGM3416EL  

Typical Electrical And Thermal Characteristics (Curves)  

Figure 7. Gate Charge Waveforms  

Figure 8. Capacitance  

Figure 9. Body-Diode Characteristics  

Figure 10. Maximum Safe Operating Area  

4

VER2.6  

AGM3416EL  

Package Mechanical Data-SOT-23  

DIMENSIONS

( unit : mm )  

Symbol  

Min  

0.90  

0.30  

2.80  

—  

Typ  

1.01  

0.42  

2.92  

1.90  

2.40  

0.49  

0.10  

Max  

1.15  

0.50  

3.00  

—  

Symbol  

Min  

0.01  

0.08  

1.20  

—  

Typ  

0.05  

0.13  

1.33  

0.95  

0.42  

0.20  

Max  

0.10  

0.15  

1.40  

—  

A

b

p  

D

A

1  

c

E

e

e

1  

L

p  

v

H

E  

Q

w

2.25  

0.45  

—  

2.55  

0.55  

—  

0.30  

—  

0.50  

—  

5

VER2.6  

AGM3416EL  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the second version issued on July 10th, 2023. This document  

replaces all

 

previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

6

VER2.6