AGM-Semi-AGM401A
| Part # | AGM-Semi-AGM401A |
Download  | AGM-Semi-AGM401A |
AGM401A
●
General Description
Product Summary
The AGM401A combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
●
Features
40V
0.86mΩ
200A
PDFN5*6 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM401A
AGM401A
PDFN5*6
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
40
±20
V
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
200
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
130
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
800
DM (pluse)
w
w
92.6
37
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
℃
450
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
62
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
1.35
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM401A
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
=40V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.0
—
—
3.0
—
V
S
g
FS
=10V,I =50A
120
Forward Transconductance
DS
GS
GS
D
=10V, I
=50A
D
0.86
—
1.1
—
—
—
m
Ω
Ω
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=50A
D
m
Dynamic Characteristics
—
—
—
—
—
—
7500
230
3.2
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=20V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
20
32
98
32
115
24
19
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=20V,
ID=50A,RGEN=3Ω
d(off)
t
f
Q
Q
g
VGS=10V, VDS=20V,
ID=50A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
200
1.0
I
A
SD
Forward on Voltage
VGS=0V,IS=50A
V
SD
V
ns
t
—
—
64
98
—
—
Reverse Recovery Time
Reverse Recovery Charge
IF=50A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM401A
Typical Performance Characteristics
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
3
VER2.5
AGM401A
Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
4
VER2.5
AGM401A
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
5
VER2.5
AGM401A
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
