AGM-Semi-AGM402A
| Part # | AGM-Semi-AGM402A |
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AGM402A
●
General Description
Product Summary
The AGM402A combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
●
Features
40V
1.8mΩ
110A
PDFN5*6 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM402A
AGM402A
PDFN5*6
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
40
±20
V
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
110
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
88
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
360
DM (pluse)
w
w
75
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
29
(Note 3)
EAS
T ,T
mJ
℃
370
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
45
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1.7
1
VER2.5
AGM402A
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
=40V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
—
1.5
98
2.3
—
V
S
g
FS
=5V,I =20A
D
Forward Transconductance
DS
GS
GS
=10V, I
=20A
D
1.8
2.5
2.6
3.6
—
—
m
Ω
Ω
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
m
—
—
—
—
—
—
2850
1070
98
C
C
C
Input Capacitance
Output Capacitance
pF
iss
VDS=20V,VGS=0V,
F=1MHZ
oss
rss
pF
pF
Reverse Transfer Capacitance
Gate resistance
=0V,
=0V,f=1.0MHz
Rg
Switching Times
Turn-on Delay Time
VGS
VDS
—
1
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4
5
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=20V,
ID=20A,RGEN=3Ω
d(off)
35
11
t
f
Q
Q
g
46
VGS=10V, VDS=20V,
ID=20A
gs
gd
8.7
5.4
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
110
1.2
I
A
SD
Forward on Voltage
VGS=0V,IS=20A
0.8
V
SD
V
ns
t
—
—
43
53
—
—
Reverse Recovery Time
Reverse Recovery Charge
IF=20A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM402A
Typical Electrical Characteristics
Fig. 1 Output characteristics
Fig. 2 Transfer characteristics
Fig.3 On-resistance vs. gate voltage
Fig.4 On-resistance vs. drain current
Fig.5 Source-to-drain diode forward characteristics
Fig.6 Capacitance vs. drain-to-source voltage
3
VER2.5
AGM402A
Fig.7 Gate-to-source voltage vs. gate charge
Fig.8 Maximum drain current vs. case temperature
Fig. 9 Maximum drain current vs. ambient temperature
4
VER2.5
AGM402A
Test Circuits and Waveforms
Resistive switching time test circuit & waveforms
Gate charge test circuit & waveform
Peak diode recovery dv/dt test circuit & waveforms
Unclamped inductive switching test circuit & waveforms
5
VER2.5
AGM402A
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
6
VER2.5
AGM402A
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
