AGM-Semi-AGM402H
| Part # | AGM-Semi-AGM402H |
Download  | AGM-Semi-AGM402H |
AGM402H
●
General Description
Product Summary
The AGM402H combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
switch and battery
for load
40V
2.6mΩ
170A
protection applications.
●
Features
TO-263 Pin Configuration
■
Advance high cell density Trench technology
D
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
G
S
nd
■
SMPS 2
Synchronous Rectifier
■
POL application
■
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
TO-263
800
AGM402H
AGM402H
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
40
±20
170
98
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
570
250
100
1000
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Parameter
Typ
—
Max
Unit
℃
/W
℃
/W
1
R
θJA
Thermal Resistance Junction-ambient (Steady State)
62
1
R
—
θJC
Thermal Resistance Junction-Case
0.5
1
VER2.6
AGM402H
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
V
V
=0V I
=250μA
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
V
DSS
DSS
40
—
45
=40V,V =0V
GS
μA
nA
I
I
—
—
=±20V,V =0V
DS
—
±
GSS
100
2.5
—
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
FS
1.0
1.7
—
V
g
=10V,I =20A
D
Forward Transconductance
DS
GS
GS
—
—
—
S
=10V, I
=40A
D
mΩ
mΩ
2.6
3.3
3.8
5.0
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=20A
D
Dynamic Characteristics
—
—
—
—
—
—
4140
405
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=20V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
360
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
2
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
13.7
6.1
50
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=20V
ID=40A,RGEN=3Ω
d(off)
t
f
10
Q
g
73
VGS=20V, VDS=20V,
ID=40A
Q
gs
gd
15
Q
15
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
170
—
—
—
A
SD
Forward on Voltage
VGS=0V,IS=40A
V
SD
0.8
18
40
1.2
—
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
IS=40A , dI/dt=500A/µs ,
nc
TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM402H
Typical Characteristics
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
Tj – Junction
T
e
mperature (°C)
Fig2.
V
GS(TH)
Gate -Source Voltage
Vs.
Tj
VGS, Gate -Source Voltage (V)
Tj – Junction
T
e
mperature (°C)
Fig3.
Typical Transfer Characteristics
Fig4.
Normalized On-Resistance Vs. Temperature
VSD, Source-Drain Voltage (V)
VDS, Drain -Source Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Fig6.
Maximum Safe Operating Area
3
VER2.6
AGM402H
Typical Characteristics
VDS , Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
Qg –
T
o
tal Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source
Voltage
Pulse Width (s)
Fig9 .
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and waveforms
Fig11.
Switching Time Test Circuit and waveforms
4
VER2.6
AGM402H
TO-263, 2 leads
Dimentions in mm unless otherwise specified
Symbol
Min
9.66
1.02
8.59
1.14
0.70
Nom
9.97
1.17
9.00
1.27
0.83
5.08
15.24
1.28
4.50
2.54
0.25
1.45
0.55
Max
A
B
C
D1
10.28
1.32
9.40
1.40
0.95
D2
D3
E
F
G
H
I
K
a1
15.09
1.15
4.30
2.29
15.39
1.40
4.70
2.79
1.30
0.45
0°
1.60
0.65
8°
a2(degree)
5
VER2.6
AGM402H
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.6
