AGM-Semi-AGM403A1
| Part # | AGM-Semi-AGM403A1 |
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AGM403A1
● General Description
Product Summary
The AGM403A1 combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
. This device is ideal
for load switch and battery protection applications.
● Features
BVDSS
RDSON
2.7m
Ω
ID
40V
120A
PRPAK5X6 Pin Configuration
■ Advance high cell density Trench technology
■Low R
DS(ON)
to minimize conductive loss
■Low Gate Charge for
fast switching
■Low Thermal resistance
●Application
■MB/VGA Vcore
■SMPS 2
nd
Synchronous Rectifier
■POL application
■BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AGM403
A
1
AGM
4
0
3
A
1
P
DFN5*6
325mm
16mm
3000
Table 1.
Absolute Maximum Ratings (T
A
=25 )
℃
Symbol
V
DS
Parameter
Value
Unit
V
40
±
20
120
72
Drain-Source Voltage (
V
GS=
0V
）
V
V
GS
Gate-Source Voltage (
V
DS=
0V)
(Note 1)
A
Drain Current-Continuous(T
c
=25
℃
)
I
D
c
Drain Current-Continuous(T =100
℃
)
A
A
I
DM (pluse)
Drain Current-Continuous@ Current-Pulsed (Note 2)
ꢀ
420
Maximum Power Dissipation(T
c
=25
℃
)
Maximum Power Dissipation(T
c
=100
℃
)
105
W
W
P
D
ꢀ ꢀ
41
(Note 3)
360
E
AS
mJ
℃
Avalanche energy
Operating Junction and Storage Temperature Range
-55 To 150
T
J
,T
STG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
—
45
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Case
1
—
1.2
1
VER2.5
AGM403A1
Table 3.
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Symbol
Parameter
Conditions
Min
Typ Max
Unit
On/Off States
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V I
D
=250μA
V
DS
=40V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
40
V
μA
nA
V
1
I
GSS
±100
2.1
V
GS(th)
g
FS
Gate Threshold Voltage
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=20A
1.1
1.5
Forward Transconductance
ꢀ 16
S
mΩ
3.6
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
2.7
3.4
R
DS(ON)
Drain-Source On-State Resistance
4.6ꢀ
mΩ
Dynamic Characteristics
pF
3000
C
Input Capacitance
iss
oss
rss
VDS=15V,VGS=0V,
F=1MHZ
C
Output Capacitance
pF
pF
Ω
370
C
Reverse Transfer Capacitance
170
R
g
Switching Times
t
d(on)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d(off)
t
f
Gate resistance
V
GS
=0V, V
DS
=0V,f=1.0MHz
1.7
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ nS
6.9
V
GS
=10V, V
DS
=15V,
R
L
=0.75
,R
GEN
=3.3
ꢀ
nS
nS
1.7
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ꢀ
30
15
ꢀ
nS
Q
g
Q
gs
Q
gd
ꢀ
nC
nC
nC
20
V
GS
=10V, V
DS
=20V, I
D
=12A
ꢀ
9
ꢀ
11
Source-Drain Diode Characteristics
A
VG=VD=0V , Force Current
I
S
ꢀ
Continuousꢀ Sourceꢀ Current
Forward on Voltage
120
V
SD
V
GS
=0V,I
S
=20A
1.2
V
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
J
=25
℃
,VDD=20V,V
G
=10V, RG=25Ω
2
VER2.5
AGM403A1
Fig.1 Power Dissipation
Fig.2 Typical output Characteristics
V
GS
=10V
V
GS
=4.5V
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
3
VER2.5
AGM403A1
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche
Measurement Circuit
Fig.12 Avalanche
Waveform
4
VER2.5
AGM403A1
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5
VER2.5
AGM403A1
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control
E
lectronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control
E
lectronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on
O
ctober 10, 2021. This document
replaces and
R
eplace all previously provided information.
It is a registered trademark of Shenzhen Core Control
E
lectronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control
E
lectronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
