AGM-Semi-AGM405MNA

AGM405MNA  

●

General Description  

Product Summary  

The AGM405MNA combines advanced trench  

MOSFET technology with a low resistance package  

to provide extremely low R

DS(ON)  

.

This device is ideal  

for load switch and battery  

BVDSS  

RDSON  

ID  

protection applications.  

40V  

5.7mΩ  

45A  

●

Features  

PDFN5*6 Pin Configuration  

■

Advance high cell density Trench technology  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

D2  

D2  

D1  

■

Low Thermal resistance  

D1  

●

Application  

■

MB/VGA Vcore  

nd  

G2  

■

SMPS 2

 

Synchronous Rectifier  

S2  

G1  

S1  

■

POL application  

■

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

—-  

—-  

AGM405MNA  

AGM405MNA  

PDFN5*6  

3000  

Table 1.  

Absolute Maximum Ratings (TA=25  

)

℃

Symbol  

Parameter  

Value  

Unit  

VDS  

VGS  

Drain-Source Voltage (VGS=0V

）

 

V

V

40  

Gate-Source Voltage (VDS=0V)  

±20  

(Note 1)  

45  

A

A

A

Drain Current-Continuous(Tc=25

℃

)  

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

29  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

62  

DM (pluse)  

w

w

27  

11  

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

(Note 3)  

EAS  

T ,T  

mJ  

50  

Avalanche energy  

J

STG  

Operating Junction and Storage Temperature Range  

℃

-55 To 150  

Table 2.  

Thermal Characteristic  

Symbol  

Typ  

—  

Max  

Unit  

Parameter  

1

R

℃

/W  

℃

/W  

θJA  

60  

Thermal Resistance Junction-ambient (Steady State)  

1

R

—  

θJC  

4.5  

Thermal Resistance Junction-Case  

1

VER2.5  

AGM405MNA  

Table 3.  

Symbol  

Electrical Characteristics (TA=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

On/Off States  

BV  

DSS  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

—  

—  

—  

—  

1

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

40  

—  

V

=40V,V =0V  

GS  

μA  

nA  

I

I

DSS  

=±20V,V =0V  

DS  

—  

±

GSS  

100  

V

V

V

V

V

=V ,I

 

=250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

V

S

1.2  

—  

1.6  

10  

2.5  

—  

g

FS  

=5V,I =20A  

D

Forward Transconductance  

DS  

GS  

GS  

=10V, I

 

=20A  

D

—  

—  

m

Ω

Ω

5.7  

9.5  

8.0  

14  

R

Drain-Source On-State Resistance  

DS(on)  

=4.5V, I

 

=15A  

D

m

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

C

C

C

Input Capacitance  

pF  

iss  

685  

190  

37  

VDS=15V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

pF  

pF  

Reverse Transfer Capacitance  

=0V,  

=0V,f=1.0MHz  

Rg  

Gate resistance  

VGS  

VDS  

—  

—  

Ω

1.7  

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

13.9  

5.7  

20  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=10V,VDS=15V,  

RL=0.75Ω,RGEN=3.3Ω  

d(off)  

t

f

11  

Q

Q

g

5.7  

3.0  

1.2  

VGS=10V, VDS=25V,  

ID=12A  

gs  

gd  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

—  

—  

—  

—  

I

45  

A

SD  

Forward on Voltage  

VGS=0V,IS=20A  

V

SD  

1.0  

V

ns  

t

—  

—  

—  

—  

—  

—  

Reverse Recovery Time  

Reverse Recovery Charge  

IF=20A , dI/dt=100A/µs ,  

rr  

nc  

TJ=25

℃

 

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.5  

AGM405MNA  

Typical Characteristics  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

Fig.3 Source Drain Forward Characteristics  

Fig.4 Gate-Charge Characteristics  

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

3

VER2.5  

AGM405MNA  

Fig.7 Capacitance  

DUTY=0.5  

Fig.8 Safe Operating Area  

1

0.3  

0.1  

0.1  

0.05  

0.02  

P

DM  

T

ON  

T

0.01  

D = T

ON

/T  

S

I

NGLE PULSE  

T

J

peak = T

C

+ P

DM

x R

θJC  

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

V

DS  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Waveform  

4

VER2.5  

AGM405MNA  

●Dimensions

（

PDFN

5*6)  

D3  

D

D1  

D2  

b

e

MILLIMETER  

Typ.  

SYMBOL  

MIN  

MAX  

A

A1  

A2  

D

0.900  

1.000  

1.100  

0.254 REF.  

0~0.05  

4.900  

4.824  

1.605  

0.500  

4.924  

5.924  

3.375  

5.674  

0.350  

4.976  

1.805  

0.700  

5.076  

6.076  

3.575  

5.826  

0.450  

D1  

D2  

D3  

E

1.705  

0.600  

5.000  

6.000  

E1  

E2  

b

3.475  

5.750  

0.400  

e

1.270 TYP.  

0.610  

L

0.534  

0.424  

0.686  

0.576  

L1  

L2  

k

0.500  

1.800 REF.  

1.290  

1.190  

0.549  

ꢀe  

1.390  

0.701  

ꢁꢂe  

H

0.625  

©

¶

d

ꢁꢃe  

1.100  

1.200  

1.300  

0.100  

5

VER2.5  

AGM405MNA  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequencesDo not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the second version issued on May 10, 2022. This document  

replaces andReplace all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

6

VER2.5