AGM-Semi-AGM406AP
| Part # | AGM-Semi-AGM406AP |
Download  | AGM-Semi-AGM406AP |
AGM406AP
●
General Description
Product Summary
The AGM406AP combines advanced trench MOSFET
to
technology with a low resistance package
provide
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
load switch and battery
for
protection applications.
●
Features
40V
6.5mΩ
53A
PDFN3*3 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Reel Size
Tape width
—-
Device Package
AGM406AP
AGM406AP
PDFN3*3
—-
5000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
40
±20
(Note 1)
53
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
32
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
59
w
w
27
11
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
50
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
℃
/W
℃
/W
θJA
—
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
4.5
1
VER2.5
AGM406AP
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
=30V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
—
2.5
—
V
S
1.6
g
FS
=5V,I =20A
D
Forward Transconductance
DS
GS
GS
10
=10V, I
=20A
D
—
—
mΩ
mΩ
6.5
12
9.0
18
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
Dynamic Characteristics
—
—
—
—
—
—
630
160
32
C
C
C
Input Capacitance
Output Capacitance
pF
pF
pF
iss
VDS=15V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
Rg
Switching Times
Turn-on Delay Time
=0V,
=0V,f=1.0MHz
VGS
VDS
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
6.5
2.5
17
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V,
Rl=0.75Ω,RGEN=3.3Ω
d(off)
t
f
2.5
15
Q
Q
g
VGS=10V, VDS=25V,
ID=12A
gs
gd
2.5
2.4
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
A
SD
53
Forward on Voltage
VGS=0V,IS=20A
V
SD
V
1.0
—
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
IF=20A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM406AP
Typical Electrical and Thermal Characteristics
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
3
VER2.5
AGM406AP
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature (
℃
)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
4
VER2.5
AGM406AP
PDFN3333 Package Outlin
e
D
ata
DIMENSIONS
( unit : mm )
Symbol
Min
0.70
0.10
3.00
—
Typ
0.75
Max
0.80
0.25
3.20
—
Symbol
Min
0.25
3.25
1.78
3.20
2.39
0.30
—
Typ
0.30
3.35
1.88
3.30
2.49
0.39
0.13
*
Max
0.35
3.45
1.98
3.40
2.59
0.50
—
A
b
D
C
0.15
D1
3.10
D2
E
0.13
D3
3.00
3.15
3.20
E1
E2
H
0.65BSC
0.40
e
L
0.30
—
0.50
12°
L1
M
10°
θ
0.15
*
*
Not specified
5
VER2.5
AGM406AP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
