AGM-Semi-AGM408MN

AGM408MN  

●

General Description  

Product Summary  

The AGM408MN combines advanced trench  

MOSFET technology with a low resistance package  

to provide extremely low R

DS(ON)  

.

device is ideal  

BVDSS  

RDSON  

ID  

This  

for load switch and battery  

protection applications.  

40V  

8.5mΩ  

11A  

●

Features  

■

Advance high cell density Trench technology  

SOP-8 Pin Configuration  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

2

D

2

D

■

Low Thermal resistance  

D1  

D1  

●

Application  

■

MB/VGA Vcore  

nd  

■

■

■

SMPS 2

 

Synchronous Rectifier  

POL application  

S1 G1

 

S2 G2  

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

AGM408MN  

AGM408MN  

SOP8  

330mm  

12mm  

3000  

Tabl

e

1

.  

Absolute Maximum Ratings (TA=25  

)

℃

Symbol  

Parameter  

Value  

Unit  

VDS  

VGS  

Drain-Source Voltage (VGS=0V

）

 

V

V

40  

Gate-Source Voltage (VDS=0V)  

±20  

(Note 1)  

Drain Current-Continuous(Ta=25

℃

)  

11  

A

A

A

I

D

a

Drain Current-Continuous(T

 

=100

℃

)  

5

44  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

w

w

2.5  

Maximum Power Dissipation(Ta=25

℃

)  

Maximum Power Dissipation(Ta=100

℃

)  

P

D

1.0  

(Note 3)  

EAS  

T ,T  

mJ  

99  

Avalanche energy  

J

STG  

Operating Junction and Storage Temperature Range  

Thermal Characteristic  

Symbol  

℃

-55 To 150  

Tabl

e

2

.  

Typ  

Max  

Unit  

Parameter  

1

—  

50  

R

θJA  

℃

/W  

Thermal Resistance Junction-ambient (Steady State)  

1

VER2.61  

AGM408MN  

Table 3.  

Symbol  

On/Off States  

Electrical Characteristics (TA=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

BV  

V

V

V

=0V I

 

=250μA  

—  

—  

—  

—  

1

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

GS  

DS  

GS  

D

40  

—  

V

DSS  

DSS  

=40V,V =0V  

GS  

μA  

nA  

I

I

=±20V,V =0V  

DS  

—  

±

GSS  

100  

2.3  

—  

V

Gate Threshold Voltage  

V

V

V

V

=V ,I

 

=250μA  

DS GS

 

D  

GS(th)  

1.2  

—  

1.7  

5.2  

V

S

g

FS  

=5V,I =10A  

D

Forward Transconductance  

DS  

GS  

GS  

=10V, I

 

=15A  

D

—  

—  

mΩ  

mΩ  

8.5  

16  

11  

20  

R

Drain-Source On-State Resistance  

DS(on)  

=4.5V, I

 

=10A  

D

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

C

C

C

Input Capacitance  

pF  

pF  

pF  

iss  

870  

265  

20  

VDS=20V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

Reverse Transfer Capacitance  

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

5.6  

29  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=10V,VDS=20V,  

ID=10A,RGEN=6Ω  

d(off)  

15  

t

f

4.6  

13  

Q

Q

g

VGS=10V, VDS=20V,  

ID=10A  

gs  

gd  

2.7  

1.6  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

—  

—  

—  

I

11  

A

SD  

Forward on Voltage  

VGS=0V,IS=15A  

V

SD  

0.8  

1.2  

V

ns  

t

—  

—  

—  

—  

—  

—  

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

IF=15A , dI/dt=100A/µs ,  

nc  

TJ=25

℃

 

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.61  

AGM408MN  

Typical Characteristics  

2.7  

2.4  

2.1  

1.8  

1.5  

1.2  

0.9  

0.6  

0.3  

40  

10V,6V,5V,4.5V,4V  

I

DS

= 250uA  

Max  

30  

V

GS

= 3.5V  

Typ  

Min  

20  

10  

0

V

GS

= 3V  

Notes:  

1. 250μs pulse test  

2. T

j

=25°C  

0

25  

50  

75  

100  

125  

150  

175  

0

1

2

3

4

5

VDS, Drain -Source Voltage (V)  

Tj – Junction Temperature (°C)  

Fig1.

Typical Output Characteristics  

Fig2.

Typical

V

GS(TH)

Gate -Source Voltage Vs. Tj  

40  

2.5  

V

DS

=5V  

30  

20  

10  

0

2.0  

V

GS

= 10V  

I

D

= 10A  

1.5  

1.0  

0.5  

V

GS

= 4.5V  

25

°

C  

125

°

C  

I

D

= 6A  

0

25  

50  

75  

100  

125  

150  

175  

0

1

2

3

4

5

Tj – Junction Temperature (°C)  

VGS, Gate -Source Voltage (V)  

Fig4.

Typical Normalized On-Resistance Vs. Tj  

Fig3.

Typical Transfer Characteristics  

20  

40  

I

DS

= 10A  

16  

30  

20  

VGS=4.5V  

12  

VGS=10V  

8

125

°

C  

10  

0

4

0

25

°

C  

2

4

6

8

10  

12  

14  

16  

18  

20  

0

2

4

6

8

10  

12  

ID, Drain-Source Current (A)  

Fig6.

Typical

On Resistance Vs Drain Current  

VGS, Gate -Source Voltage (V)  

Fig5.

Typical

On Resistance Vs Gate -Source Voltage  

3

VER2.61  

AGM408MN  

Typical Characteristics  

100  

100  

10  

10µs  

100µs  

1ms  

10  

Tj=125

°

C  

Tj=25

°

C  

10ms  

1

1

0.1  

0.01  

DC  

T

A

=25°C  

0.1  

0.1  

1

10  

100  

0

0.2  

0.4  

0.6  

0.8  

1

1.2  

1.4  

1.6  

VDS, Drain -Source Voltage (V)  

VSD, Source-Drain Voltage (V)  

Fig8.

Maximum Safe Operating Area  

Fig7.

Typical Source-Drain Diode Forward Voltage  

10  

V

DS

= 20V  

Ciss  

1000  

I

D=

10A  

8

6

4

2

0

Coss  

100  

Crss  

10  

Frequency=1 MHZ  

1

0.1  

1

10  

0

3

6

9

12  

15  

Qg – Total Gate Charge (nC)  

VDS, Drain-Source Voltage (V)  

Fig10.

Typical Gate Charge Vs. Gate-Source

Voltage  

Fig9.

Typical Capacitance Vs. Drain-Source Voltage  

15  

3

silicon limited  

12  

2

2

1

1

9

6

3

I

D

=f(T  

C

);V

GS

≥10V  

P

tot

=f(T  

C

)  

0

0

0

25  

50  

75  

100  

125  

150  

175  

0

25  

50  

75  

100  

125  

150  

175  

T

T

A

– Case

T

emperature (°C)  

Fig11.

Power Dissipation Vs.

Case

T

emperature  

Fig12.

Maximum Drain Current Vs.

Case

T

emperature  

4

VER2.61  

AGM408MN  

Typical Characteristics  

10  

D

=

T

on

/T  

In descending order  

T

J

,

PK

=  

T

A

+

P  

DM  

.

Z  

θJA  

.

R

θJA  

D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse  

R

θJA

=  

78

°

 

C/W  

1

0.1  

0.01  

0.001  

0.0001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

Pulse Width (s)  

Fig13 .

Normalized Maximum Transient Thermal Impedance  

5

VER2.61  

AGM408MN  

●Dimensions

(SOP8)  

SYMBOL  

min  

TYP  

max  

SYMBOL  

min  

max  

A

4.80  

0.37  

5.00  

0.47  

C

1.30  

0.55  

0.55  

0.05  

0.19  

1.50  

0.75  

0.65  

0.20  

0.23  

A1  

A2  

A3  

B

C1  

C2  

C3  

C4  

D

1.27  

0.41  

0.20  

1.05  

5.80  

3.80  

6.20  

4.00  

B1  

B2  

5.00  

D1  

0.40  

0.62  

6

VER2.61  

AGM408MN  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the third version issued on May 10th, 2023. This document  

replaces all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

7

VER2.61