AGM-Semi-AGM40N20F
| Part # | AGM-Semi-AGM40N20F |
Download  | AGM-Semi-AGM40N20F |
AGM40N20F
●
General Description
Product Summary
The AGM40N20F combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
switch and battery
for load
protection applications.
200V
47mΩ
40A
●
Features
TO-220F Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM40N20F
AGM40N20F
TO-220F
1000
Tabl
e
1
.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
200
±20
40
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
24
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
160
DM (pluse)
w
w
100
50
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
1200
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
62
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
1.0
θJC
Thermal Resistance Junction-Case
1
VER2.6
AGM40N20F
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
200
—
V
DSS
DSS
=200V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2
—
4
V
S
g
FS
=10V,I =15A
—
—
Forward Transconductance
DS
GS
GS
D
65
=10V, I
=20A
D
—
—
mΩ
mΩ
47
—
65
—
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
2800
110
305
VDS=25V,
VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
Ω
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
20
30
65
25
97
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=100V,
ID=20A,RGEN=3.9Ω
d(off)
t
f
Q
g
VGS=10V,
VDS=100V, ID=20A
Q
gs
gd
14
39
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
40
A
SD
Forward on Voltage
VGS=0V,IS=20A
V
SD
—
280
420
1.3
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
IF=20A , dI/dt=100A/µs ,
—
—
—
—
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM40N20F
Test Circuits and Waveforms
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
6
VER2.6
AGM40N20F
TO-220F Package
Mechanical Data
A
E
A1
MILLIMETER
SYMBOL
MIN
Typ.
4.700
MAX
A
4.500
2.340
2.560
0.700
1.180
1.250
0.400
1.200
15.570
4.900
2.740
2.960
0.950
1.430
1.550
0.650
1.350
16.170
2.540
A1
A2
b
2.760
0.800
1.280
b1
1.350
b2
c
0.500
c1
c1
1.300
D
H
15.870
6.700 REF
10.160
2.540 BSC
5.080 BSC
E
9.960
10.360
e
b1
e1
L
12.680
2.780
3.150
3.030
3.150
12.980
2.930
3.300
3.180
3.450
13.280
3.080
3.450
3.450
3.650
L1
F3
¶
¶ꢀ
b2
A2
b
e
c
e1
(Bottom View)
(Top View)
DIM
MILLIMETERS
A
10.16
±
0.3
7.00
±
0.1
3.3
±
0.2
A1
A2
A3
B1
B2
B3
C
9.5
±
0.2
15.87
±
0.3
4.7
±
0.2
6.68
±
0.4
3.3
±
0.2
C1
C2
D
12.57
±
0.3
10.02
±
0.5
2.54
±
0.05
1.28
±
0.2
0.8
±
0.1
D1
D2
K
3.1
±
0.3
E1
E3
E4
2.54
±
0.1
0.5
±
0.1
2.76
±
0.2
DIA
⊙
1.5(deep 0.2)
Unit :mm
8
VER2.6
AGM40N20F
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on April 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
9
VER2.6
