AGM-Semi-AGM40P35A
| Part # | AGM-Semi-AGM40P35A |
Download  | AGM-Semi-AGM40P35A |
AGM40P35A
●
General Description
Product Summary
The AGM40P35A combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
BVDSS
RDSON
ID
This device is ideal
and battery
for load switch
-40V
11mΩ
-60A
protection applications.
PDFN5*6 Pin Configuration
●
Features
■
Advance high cell density Trenc
h
t
echnology
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM40P35A
AGM40P35A
PDFN5*6
3000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
V
V
VDS
VGS
-40
±20
-60
—
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
-160
w
w
30
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
12
—
(Note 3)
EAS
T ,T
mJ
℃
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
—
1
—
R
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
—
1
4.17
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM40P35A
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=-250μA
—
—
—
—
-1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
-40
—
V
DSS
DSS
=-40V,V =0V
GS
μA
nA
I
=±20V,V =0V
DS
—
±100
I
GSS
V
g
V
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
-1.5
—
-1.7
-2.5
—
V
S
=5V,I =-12A
Forward Transconductance
DS
GS
GS
D
FS
26
11
=-10V, I
=-12A
D
15
24
—
—
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-12A
D
17.5
Dynamic Characteristics
—
—
—
—
—
—
2660
360
248
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=-20V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
10
18
38
24
72
14
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-20V,
ID=-12A,RGEN=3Ω
d(off)
t
f
Q
g
VGS=-10V,
VDS=-20V, ID=-12A
Q
gs
gd
Q
15
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
-60
-1.2
—
A
SD
Forward on Voltage
VGS=0V,IS=-12A
V
SD
V
ns
—
—
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Isd=-12A ,
40
42
nc
dI/dt=100A/µs , TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM40P35A
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
3
VER2.5
AGM40P35A
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
4
VER2.5
AGM40P35A
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 10 ID Current Derating vs Junction
Temperature
Figure 8 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
5
VER2.5
AGM40P35A
MILLIMETER
Typ.
YMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
6
VER2.5
AGM40P35A
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces and Replace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
