AGM-Semi-AGM40P65E

AGM40P65E  

●

General Description  

Product Summary  

The AGM40P65E combines advanced trench  

MOSFET technology with a low resistance package  

to provide extremely low R

DS(ON)  

.

device is ideal  

This  

for load switch and battery  

BVDSS  

RDSON  

ID  

protection applications.  

-40V  

70mΩ  

-5A  

●

Features  

■

Advance high cell density Trench technology  

SOT-23-3 Pin Configuration  

■

■

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

■

Low Thermal resistance  

●

Application  

■

MB/VGA Vcore  

nd  

■

■

■

SMPS 2

 

Synchronous Rectifier  

POL application  

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

8mm  

178mm  

40P65E  

AGM40P65E  

SOT-23-3  

3000  

Table 1.  

Absolute Maximum Ratings (TA=25  

)

℃

Symbol  

Parameter  

Drain-Source Voltage (VGS=0V

）

 

Gate-Source Voltage (VDS=0V)  

Value  

Unit  

VDS  

VGS  

V

V

-40  

±20  

-3.3  

-2.0  

-13  

(Note 1)  

Drain Current-Continuous(TA=25

℃

)  

A

A

A

I

D

A

Drain Current-Continuous(T

 

=70

℃

)  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

w

1.4  

Maximum Power Dissipation(TA=25

℃

)  

P

D

T ,T  

J

STG  

Thermal Characteristic  

Symbol  

Operating Junction and Storage Temperature Range  

℃

-55 To 150  

Table 2.  

Typ  

Max  

Unit  

Parameter  

1

—  

R

θJA  

℃

/W  

Thermal Resistance Junction-ambient (Steady State)  

89  

1

VER2.6  

AGM40P65E  

Table 3.  

Symbol  

Electrical Characteristics (TA=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

On/Off States  

BV  

DSS  

V

GS  

V

DS  

V

GS  

=0V I

 

=250μA  

—  

—  

—  

—  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

-40  

—  

V

=-40V,V =0V  

GS  

-1  

μA  

nA  

I

I

DSS  

=±20V,V =0V  

DS  

—  

±

GSS  

100  

V

V

V

V

V

=V ,I

 

=-250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

-1.1  

-1.6  

-5  

-2.3  

—  

V

S

g

FS  

=-5V,I =-3.1A  

D

Forward Transconductance  

DS  

GS  

GS  

—  

—  

—  

=-10V, I

 

=-3A  

D

m

Ω

Ω

70  

95  

85  

R

Drain-Source On-State Resistance  

DS(on)  

=-4.5V, I

 

=-2A  

D

m

120  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

600  

90  

C

C

C

Input Capacitance  

pF  

iss  

VDS=-20V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

pF  

pF  

Reverse Transfer Capacitance  

70  

=0V,  

=0V,f=1.0MHz  

Rg  

Gate resistance  

VGS  

VDS  

—  

—  

—  

Ω

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

9

8

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=-10V,VDS=-20V,  

RGEN=3Ω,ID=-3A  

d(off)  

25  

9

t

f

Q

Q

g

14  

2.9  

3.8  

VGS=-10V,  

VDS=-20V, ID=-3A  

gs  

gd  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

—  

—  

—  

—  

I

-5.0  

-1.2  

A

SD  

Forward on Voltage  

VGS=0V,IS=-3A  

V

SD  

V

ns  

t

—  

—  

—  

—  

—  

—  

Reverse Recovery Time  

Reverse Recovery Charge  

IF=-3A , dI/dt=100A/µs ,  

rr  

nc  

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃

 

J

2

VER2.6  

AGM40P65E  

3

VER2.6  

AGM40P65E  

4

VER2.6  

AGM40P65E  

5

VER2.6  

AGM40P65E  

SOT-23-3L  

PACKAGE OUTLINE DIMENSIONS  

c

D

L1 L  

e1  

A1  

e

b

C

O

MM

O

N DIMENSI

O

NS  

CUNI

T

S MEASURE=MILLIME

T

ER  

SYMB

O

L  

MIN  

N

O

M  

MAX  

A

A1  

A

2  

b

1.050  

0.000  

1.050  

—— 1.

3

00  

—— 0.

2

00  

—— 1.

2

00  

0.

3

00 0.400 0.500  

—— 0.

2

00  

2

.900

3

.0

20  

c

0.100  

D

E

2

.

820  

1.500 1.

6

00 1.700  

E1  

e

2

.

6

50  

2

.

8

00  

0.950

T

YP  

2

.950  

2

.000  

e1  

L

1.

8

00 1.900  

0.

6

REf  

L1  

0.

3

00 0.450 0.

6

00  

0°

— 8

°  

Unit:mm  

6

VER2.6  

AGM40P65E  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the second version issued on March 10, 2023. This document  

replaces andReplace all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

7

VER2.6