AGM-Semi-AGM40P75A

AGM40P75A  

●

General Description  

Product Summary  

The AGM40P75A combines advanced trench MOSFET  

to provide  

technology with a low resistance package  

extremely low R

DS(ON)  

BVDSS  

RDSON  

ID  

This device is ideal  

and battery  

for load switch  

-40V  

7.0mΩ  

-70A  

protection applications.  

PDFN5*6 Pin Configuration  

●

Features  

■

Advance high cell density Trenc

h

t

echnology  

Low R

DS(ON)

to minimize conductive loss  

Low Gate Charge for fast switching  

■

■

■

Low Thermal resistance  

●

Application  

■

MB/VGA Vcore  

nd  

■

■

■

SMPS 2

 

Synchronous Rectifier  

POL application  

BLDC Motor driver  

Package Marking and Ordering Information  

Quantity  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

—-  

—-  

AGM40P75A  

AGM40P75A  

PDFN5*6  

3000  

Tabl

e

1

.  

Absolute Maximum Ratings (TA=25  

)

℃

Symbol  

Parameter  

Drain-Source Voltage (VGS=0V

）

 

Value  

Unit  

V

V

VDS  

VGS  

-40  

±20  

-70  

Gate-Source Voltage (VDS=0V)  

(Note 1)  

A

A

A

Drain Current-Continuous(Tc=25

℃

)  

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

-56  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

-280  

w

w

113  

45  

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

(Note 3)  

EAS  

T ,T  

mJ  

℃

500  

Avalanche energy  

Operating Junction and Storage Temperature Range  

J

STG  

-55 To 150  

Tabl

e

2

.  

Thermal Characteristic  

Symbol  

Typ  

Max  

Unit  

Parameter  

—  

1

—  

R

R

θJA  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient (Steady State)  

—  

1

1.1  

θJC  

Thermal Resistance Junction-Case  

1

VER2.5  

AGM40P75A  

Tabl

e

3

.  

Symbol  

On/Off States  

Electrical Characteristics (TA=25

 

unless otherwise noted)  

℃

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

BV  

V

GS  

V

DS  

V

GS  

=0V I

 

=-250μA  

—  

—  

—  

—  

-1  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

D

-40  

—  

V

DSS  

DSS  

=-40V,V =0V  

GS  

μA  

nA  

I

=±20V,V =0V  

DS  

—  

±100  

I

GSS  

V

g

V

V

V

V

=V ,I

 

=-250μA  

Gate Threshold Voltage  

DS GS

 

D  

GS(th)  

-1.2  

-1.6  

-2.3  

—  

V

S

=-15V,I =-12A  

Forward Transconductance  

DS  

GS  

GS  

D

FS  

—  

20  

—  

=-10V, I

 

=-12A  

D

mΩ  

mΩ  

7.0  

10  

10  

15  

R

Drain-Source On-State Resistance  

DS(on)  

=-4.5V, I

 

=-12A  

D

—  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

6500  

790  

605  

C

C

C

Input Capacitance  

pF  

pF  

pF  

iss  

VDS=-20V,VGS=0V,  

F=1MHZ  

Output Capacitance  

oss  

rss  

Reverse Transfer Capacitance  

f=1.0MHz  

Rg  

Gate resistance  

—  

—  

—  

Ω

Switching Times  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

nS  

nS  

nS  

nS  

nC  

nC  

nC  

d(on)  

18  

31  

70  

40  

150  

33  

t

t

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

r

VGS=-10V,VDS=-20V,  

ID=-12A,RGEN=3Ω  

d(off)  

t

f

Q

g

VGS=-10V,  

VDS=-20V, ID=-12A  

Q

gs  

gd  

Q

27  

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

I

—  

—  

—  

—  

-70  

-1.2  

—  

A

SD  

Forward on Voltage  

VGS=0V,IS=-12A  

V

SD  

V

ns  

—  

—  

t

—  

—  

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

Isd=-12A ,  

nc  

dI/dt=100A/µs , TJ=25

℃  

—  

Q

rr  

Notes 1.The maximum current rating is package limited.  

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature  

Notes 3.EAS condition: T

 

=25

℃  

J

2

VER2.5  

AGM40P75A  

3

VER2.5  

AGM40P75A  

4

VER2.5  

AGM40P75A  

Characteristics Curve

：

 

5

VER2.5  

AGM40P75A  

MILLIMETER  

Typ.  

SYMBOL  

MIN  

MAX  

A

A1  

A2  

D

0.900  

1.000  

1.100  

0.254 REF.  

0~0.05  

4.900  

4.824  

3.910  

4.924  

5.924  

3.375  

5.674  

0.350  

4.976  

4.110  

5.076  

6.076  

3.575  

5.826  

0.450  

4.010  

D1  

D2  

E

5.000  

6.000  

3.475  

E1  

E2  

b

5.750  

0.400  

1.270 TYP.  

e

0.534  

0.424  

L

0.610  

0.500  

0.686  

0.576  

L1  

L2  

k

1.800 REF.  

1.190  

0.549  

1.290  

0.625  

10˚  

1.390  

0.701  

1²˚  

H

8˚  

1.100  

1.200  

1.300  

0.100  

d

6

VER2.5  

AGM40P75A  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the second version issued on June 10, 2022. This document  

replaces and Replace all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

7

VER2.5