AGM-Semi-AGM412MPA
| Part # | AGM-Semi-AGM412MPA |
Download  | AGM-Semi-AGM412MPA |
AGM412MPA
● General Description
Product Summary
The AGM412MPA combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
40V
RDSON
ID
This device is
ideal for load switch and battery
10mΩ
12mΩ
40A
-45A
protection applications.
-40V
● Features
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
PDFN5*6 Pin Configuration
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
D1
D2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G1
G2
POL application
S1
S2
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
PDFN5*6
–mm
–mm
3000
AGM412MPA AGM412MPA
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
V
V
A
A
Drain-Source Voltage (
V
GS=
0V
）
V
DS
V
GS
40
±20
40
35
70
25
10
-40
Gate-Source Voltage (
V
DS=
0V)
±20
-45
-37
-84
(Note 1)
Drain Current-Continuous(T
c
=25
℃
)
I
D
Drain Current-Continuous(Tc=100
℃
)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
c
=25
℃
)
W
W
25
10
P
D
Total Power Dissipation(TA=100
℃
)
(Note 3)
Avalanche energy
mJ
98
125
EAS
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
℃
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
—
—
62
5
1
VER2.5
AGM412MPA
Table 3. N- Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
=40V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
—
—
9
2.5
—
V
S
=25V,I =10A
Forward Transconductance
DS
GS
GS
D
FS
=10V, I
=20A
D
—
—
mΩ
mΩ
10
13
14
18
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=10A
D
Dynamic Characteristics
—
—
—
—
—
—
1580
270
C
C
C
Input Capacitance
pF
pF
pF
iss
Output Capacitance
oss
rss
VGS=0V,
F=1MHZ
Reverse Transfer Capacitance
140
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=25V,
RL=0.75
Ω
,RGEN=6
Ω
d(off)
t
f
Q
Q
g
17
8
VGS=10V, VDS=25V,
ID=5A
gs
gd
Q
10
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
40
A
SD
Forward on Voltage
VGS=0V,IS=5A
V
SD
1.2
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=5A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM412MPA
Table 3. P-Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-40
DSS
V
μA
nA
—
—
=-40V,V =0V
GS
-1
—
DSS
=±20V,V =0V
DS
±100
I
—
GSS
—
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.2
—
-2.5
—
V
S
—
=-10V,I =-5A
Forward Transconductance
FS
DS
GS
GS
D
18
=-10V, I
=-15A
D
—
—
12
17
16
22
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-10A
D
Dynamic Characteristics
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
—
—
—
2650
185
pF
pF
pF
VDS=-15V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
135
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
—
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-15V,
ID=-15A,RGEN=3.3Ω
t
d(off)
t
f
Q
g
30
9.0
15
VGS=-4.5V,
VDS=-15V, ID=-10A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
—
—
SD
-45
-1.28
—
A
Forward on Voltage
VGS=0V,IS=-15A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-15A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.5
AGM412MPA
Fig.1 Power Dissipation
Fig.2 Typical output Characteristics
1.2
1
40
V
GS
=10V
30
20
10
0
0.8
0.6
0.4
0.2
0
V
GS
=4.5V
0
0.5
Drain-Source voltage (V)
1
0
50
100
150
200
Temperature (
。
C)
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
2.5
2
30
20
10
0
1.5
1
0.5
0
0
10
20
30
40
-50
50
Junction Temperature
150
Drain Current(A)
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
30
1.6
20
10
0
1.2
0.8
0.4
3
5
7
9
-50
0
50
100
150
V
GS
( V )
Temperature
4
VER2.5
AGM412MPA
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche
Measurement Circuit
Fig.12 Avalanche
Waveform
5
VER2.5
AGM412MPA
Fig.1 Gate-Charge
Characteristics
Fig.2 Capacitance
Characteristics
3510
10
3010
Ciss
VDS=25V
IC=8A
8
2510
2010
1510
6
Vgs
4
2
0
1010
Coss
510
Crss
10
0
10
20
30
0
10
20
Qg
30
40
Fig.3 Power Dissipation Derating Curve
Fig.4 Typical output Characteristics
1.2
1
40
30
20
10
0
V
GS
=-10V
V
GS
=-4.5V
0.8
0.6
0.4
0.2
0
0
0.5
Drain-Source voltage (V)
1
0
50
100
150
200
Temperature (
。
C)
Fig.5 Threshold Voltage V.S Junction Temperature
Fig.6 Resistance V.S Drain Current
Junction Temperature
50
16
-50
150
14
12
10
8
0
-0.5
-1
6
4
-1.5
-2
2
0
0
20
40
60
80
100
Drain Current(A)
-2.5
6
VER2.5
AGM412MPA
Fig.7 On-Resistance VS Gate Source Voltage
Fig.8 On-Resistance V.S Junction Temperature
20
1.5
15
10
5
1
0.5
0
-50
0
50
100
150
3
5
7
9
Temperature
V
GS
( V )
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Switching Time Measurement Circuit
Fig.12 Gate Charge Waveform
7
VER2.5
AGM412MPA
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
4.010
D1
D2
E
5.000
6.000
3.475
E1
E2
b
5.750
0.400
1.270 TYP.
e
0.534
0.424
L
0.610
0.500
0.686
0.576
L1
L2
k
1.800 REF.
1.190
0.549
1.290
0.625
10˚
1.390
0.701
1²˚
H
8˚
1.100
1.200
1.300
0.100
d
8
VER2.5
AGM412MPA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
9
VER2.5
