AGM-Semi-AGM418M
| Part # | AGM-Semi-AGM418M |
Download  | AGM-Semi-AGM418M |
AGM418M
● General Description
The AGM418M combines advanced trench
MOSFET technology with a low resistance
Product Summary
to provide extremely low R
DS(ON)
.
package
BVDSS
RDSON
18mΩ
ID
This device is
ideal for load switch and battery
40V
8A
protection applications.
● Features
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
SOP8 Pin Configuration
■
■
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
2
D
2
D
D1
D1
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
S1 G1
S2 G2
POL application
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SOP8
330mm
12mm
3000
AGM418M
AGM418M
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Symbol
Parameter
Rating
Units
V
V
A
A
Drain-Source Voltage (
V
GS=
0V
）
V
DS
V
GS
40
±20
8.0
4.8
32
Gate-Source Voltage (
V
DS=
0V)
(Note 1)
Drain Current-Continuous(T
a
=25
℃
)
I
D
Drain Current-Continuous(Ta=100
℃
)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
a
=25
℃
)
W
W
2.5
1.0
P
D
Total Power Dissipation(Ta=100
℃
)
(Note 3)
Avalanche energy
mJ
EAS
99
Operating Junction and Storage Temperature Range
℃
TJ,TSTG
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
50
Unit
Thermal Resistance Junction-ambient (Steady State)
1
℃
/W
R
θJA
—
1
VER2.6
AGM418M
Table 3. N- Channel Electrical Characteristics (T
J
=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
=40V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
—
1.6
10
2.5
—
V
S
=5V,I =5A
Forward Transconductance
DS
GS
GS
D
FS
=10V, I
=10A
D
—
—
mΩ
mΩ
18
21
24
35
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=5A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
660
92
pF
pF
pF
iss
Output Capacitance
oss
rss
VDS=20V,VGS=0V,
F=1MHZ
Reverse Transfer Capacitance
33
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
1.7
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
4.5
2.5
14
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V,
RL=2.5
Ω
,RGEN=3
Ω
d(off)
3.5
t
f
Q
Q
g
8.9
2.4
1.4
VGS=10V, VDS=20V,
ID=6A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
Forward on Voltage
—
—
—
—
I
8.0
1.2
A
V
SD
VGS=0V,IS=10A
V
SD
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM418M
N- Channel Typical Electrical and Thermal Characteristics (Curves)
Vdd
Rl
t
on
t
t
t
t
t
)
f)
Vin
9
90%
9
90%
D
Vout
Vgs
V
O
U
T
T
IN
V
V
E
E
R
R
T
T
E
E
D
D
Rgen
1
10%
G
10%
50%
9
90%
S
V
5
50%
1
10%
PU
L
L
S
S
E
E
W
W
I
I
D
D
T
T
H
H
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 3 Output Characteristics
Figure 4 Transfer Characteristics
I
D
– Drain Current (A)
T
J
-Junction
T
e
mperature(
℃
)
Figure 5 Drain-Source On-Resistance
Figure 6 Drain-Source On-Resistance
3
VER2.6
AGM418M
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Power Dissipation
Figure7 Rdson vs Vgs
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Figure 12 Safe Operation Area
4
VER2.6
AGM418M
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
5
VER2.6
AGM418M
●
Dimensions(SOP8)
SYMBOL
min
TYP
max
SYMBOL
min
max
A
A1
A2
A3
B
4.80
0.37
5.00
0.47
C
1.30
0.55
0.55
0.05
0.19
1.50
0.75
0.65
0.20
0.23
C1
C2
C3
C4
D
1.27
0.41
0.20
1.05
5.80
3.80
6.20
4.00
B1
B2
5.00
D1
0.40
0.62
6
VER2.6
AGM418M
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on August 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.6
