AGM-Semi-AGM420MC
| Part # | AGM-Semi-AGM420MC |
Download  | AGM-Semi-AGM420MC |
AGM420MC
● General Description
Product Summary
The AGM420MC combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
40V
RDSON
ID
7.6A
-7.5A
This device is
ideal for load switch and battery
18mΩ
26mΩ
protection applications.
-40V
● Features
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
SOP8 Pin Configuration
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
D1
D2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G1
G2
POL application
S1
S2
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
–mm
–mm
AGM420MC
AGM420MC
SOP8
3000
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
V
V
A
A
Drain-Source Voltage (
V
GS=
0V
）
V
DS
V
GS
40
±20
7.6
5.5
24
-40
Gate-Source Voltage (
V
DS=
0V)
±20
-7.5
-5.3
-24
(Note 1)
Drain Current-Continuous(T
c
=25
℃
)
I
D
Drain Current-Continuous(Tc=100
℃
)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
c
=25
℃
)
W
W
2.5
1.0
24
2.5
1.0
23
P
D
Total Power Dissipation(Tc=100
℃
)
(Note 3)
Avalanche energy
mJ
EAS
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
℃
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
—
—
160
50
1
VER2.5
AGM420MC
Table 3. N- Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
=40V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.1
1.8
—
2.2
—
V
S
=5V,I =6A
Forward Transconductance
DS
GS
GS
D
FS
15
—
=10V, I
=6A
D
mΩ
mΩ
18
24
24
38
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=6A
D
—
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
516
Output Capacitance
oss
rss
VDS=20V,VGS=0V,
F=1MHZ
82
43
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
4.5
2.5
nS
nS
nS
nS
nC
nC
nC
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=15V,
RL=2.5
Ω
,RGEN=3
Ω
14.5
3.5
8.9
2.4
1.4
d(off)
t
f
Q
Q
g
VGS=10V, VDS=20V,
ID=6A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
7.6
1.2
A
SD
Forward on Voltage
VGS=0V,IS=6A
V
SD
0.8
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=6A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM420MC
Table 3. P-Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-40
DSS
V
μA
nA
—
—
=-40V,V =0V
GS
-1
—
—
DSS
=±20V,V =0V
DS
±100
I
GSS
—
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.2
—
—
-2.4
—
V
S
=-10V,I =-1A
Forward Transconductance
FS
DS
GS
GS
D
13
=-10V, I
=-6A
D
—
—
26
38
34
49
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-5A
D
Dynamic Characteristics
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
—
—
—
1150
290
pF
pF
pF
oss
rss
VGS=0V,
F=1MHZ
Reverse Transfer Capacitance
Gate resistance
205
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
—
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-20V,
ID=-10A,RGEN=6.8Ω
t
d(off)
t
f
Q
g
20
8.0
11
VGS=-10V,
VDS=-25V, ID=-8A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
—
SD
-7.5
-1.28
—
A
Forward on Voltage
VGS=0V,IS=-6A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-10A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.5
AGM420MC
N- Channel Typical Electrical and Thermal Characteristics (Curves)
Vdd
Rl
t
o
n
t
off
t
f
t
t
t
)
Vin
9
0
0
0
%
90%
D
Vout
Vgs
V
O
U
T
T
IN
V
V
E
E
R
R
TED
Rgen
10%
90%
G
1
10%
S
V
5
0
%
50%
1
10%
PUL
S
S
E
E
W
W
I
I
DTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 3 Output Characteristics
Figure 4 Transfer Characteristics
I
D
– Drain Current (A)
T
J
-Junction
T
e
mperature(
℃
)
Figure 5 Drain-Source On-Resistance
Figure 6 Drain-Source On-Resistance
4
VER2.5
AGM420MC
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Power Dissipation
Figure7 Rdson vs Vgs
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Figure 12 Safe Operation Area
5
VER2.5
AGM420MC
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
6
VER2.5
AGM420MC
●
P Channel characteristics curve
Fig.1 Power Dissipation Derating Curve
Fig.2 Typical output Characteristics
1.2
1
75.0
0.8
0.6
0.4
0.2
0
50.0
V
GS
=-10V
V
GS
=-4.5V
25.0
0.0
0
0.5
1
1.5
2
0
50
100
150
200
Drain-Source voltage (V)
Temperature (
。
C)
Fig.3 Threshold Voltage V.S Junction Temperature
Fig.4 Resistance V.S Drain Current
Junction Temperature
-50
50
150
40
30
20
10
0
0
-0.5
-1
-1.5
-2
-50
-40
-30
-20
-10
0
Drain Current(A)
Fig.5 On-Resistance VS Gate Source Voltage
Fig.6 On-Resistance V.S Junction Temperature
80
70
60
50
40
30
20
10
0
1.5
1
0.5
-50
0
50
100
150
Temperature
3
5
7
9
V
GS
( -V )
7
VER2.5
AGM420MC
Fig.7 Switching Time Measurement Circuit
Fig.8 Gate Charge Waveform
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Avalanche Measurement Circuit
Fig.12 Avalanche Waveform
8
VER2.5
AGM420MC
●
Dimensions(SOP8)
SYMBOL
min
TYP
max
SYMBOL
min
max
A
A1
A2
A3
B
4.80
0.37
5.00
0.47
C
1.30
0.55
0.55
0.05
0.19
1.50
0.75
0.65
0.20
0.23
C1
C2
C3
C4
D
1.27
0.41
0.20
1.05
5.80
3.80
6.20
4.00
B1
B2
5.00
D1
0.40
0.62
9
VER2.5
AGM420MC
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
10
VER2.5
