AGM-Semi-AGM425MA
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AGM425MA
● General Description
Product Summary
The AGM425MA combines advanced trench
MOSFET technology with a low resistance
to provide extremely low R
DS(ON)
.
BVDSS
40V
RDSON
ID
23A
-20A
package
This device is
ideal for load switch and battery
18mΩ
32mΩ
protection applications.
● Features
-40V
■
Advance high cell density Trench technology
R
DS(ON)
to minimize conductive loss
Low
PDFN5*6 Pin Configuration
■
■
■
Low Gate Charge for fast switching
Low Thermal resistance
D1
D2
●
Application
■
■
■
■
MB/VGA Vcore
SMPS 2
nd
Synchronous Rectifier
G1
G2
POL application
S1
S2
BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
–mm
–mm
AGM425MA
AGM425MA
PDFN5*6
3000
Table 1.
Absolute Maximum Ratings (T
A
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
Drain-Source Voltage (
V
GS=
0V
）
V
V
A
A
V
DS
V
GS
40
±20
23
18
46
25
10
-40
Gate-Source Voltage (
V
DS=
0V)
±20
-20
(Note 1)
Drain Current-Continuous(T
c
=25
℃
)
I
D
Drain Current-Continuous(Tc=100
℃
)
-12.6
-80
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
c
=25
℃
)
W
W
27.8
11
P
D
Total Power Dissipation(Tc=100
℃
)
(Note 3)
Avalanche energy
mJ
28
18
EAS
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
℃
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
℃
/W
R
θJA
R
θJC
—
—
62
5
℃
/W
1
VER2.5
AGM425MA
Table 3. N- Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
40
—
V
DSS
=40V,V =0V
GS
μA
nA
I
DSS
=±20V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.0
—
1.4
2.0
—
V
S
=5V,I =10A
Forward Transconductance
DS
GS
GS
D
FS
12
18
25
=10V, I
=15A
D
—
—
mΩ
mΩ
25
33
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=10A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
593
Output Capacitance
oss
rss
VDS=15V,VGS=0V,
F=1MHZ
76
56
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
2.6
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
8.9
2.2
41
nS
nS
nS
nS
nC
nC
nC
d(on)
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=20V,
ID=1A,RGEN=3.3
Ω
d(off)
t
f
2.7
5.5
1.25
2.5
Q
Q
g
VGS=4.5V,
VDS=12V, ID=20A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
I
23
1.2
—
A
SD
Forward on Voltage
VGS=0V,IS=1A
V
SD
—
—
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
IF=1A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
—
—
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM425MA
Table 3. P-Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-40
DSS
V
μA
nA
—
—
=-40V,V =0V
GS
-1
—
—
DSS
=±20V,V =0V
DS
±100
I
GSS
—
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-1.0
—
-1.5
18
-2.5
—
V
S
=-5V,I =-10A
Forward Transconductance
FS
DS
GS
GS
D
=-10V, I
=-15A
D
—
—
32
41
45
52
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-10A
D
Dynamic Characteristics
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
—
—
—
1080
87
pF
pF
pF
VDS=-20V,VGS=0V,
F=1MHZ
oss
rss
Reverse Transfer Capacitance
Gate resistance
77
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Switching Times
Turn-on Delay Time
—
11
—
Ω
—
—
—
—
—
—
—
5.9
7.1
25
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=-10V,VDS=-20V,
ID=-6A,RGEN=3Ω
t
d(off)
t
f
8.2
17
Q
g
VGS=-10V,
VDS=-20V, ID=-6A
Q
gs
gd
4.2
3.7
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
—
SD
-20
-1.2
—
A
Forward on Voltage
VGS=0V,IS=-6A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-6A , dI/dt=100A/µs ,
rr
TJ=25
℃
nc
—
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.5
AGM425MA
N-Channel Typical Characteristics
40
35
30
25
20
12
I
D
=12A
V
GS
=10V
V
GS
=7V
V
GS
=5V
10
8
6
V
GS
=4.5V
4
V
GS
=3V
2
0
2
4
6
8
10
0
0.5
1
1.5
2
V
DS
Drain-to-Source Voltage (V)
V
GS
(V)
10
12
V
DS
=20V
I
D
=12A
8
6
4
2
0
8
4
0
T
J
=150
℃
T
J
=25
℃
0
4
8
12
16
0.00
0.25
0.50
0.75
1.00
Q
G
, T
o t a l
G a t e
C h a
V
SD
, Source-to-Drain Voltage (V)
2.0
1.7
1.4
1.1
0.8
0.5
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
VER2.5
AGM425MA
1000
100
10
100
10
1
F=1.0MHz
Ciss
10us
100us
Coss
Crss
10ms
100ms
DC
T =25
℃
C
Single Pulse
0
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DU
T
Y=0.5
0.3
0.1
0.1
0.05
0.02
0.01
PDM
Ton
T
D = Ton/T
Tj peak
= TC + PDM x Rthjc
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
d(off)
T
f
T
off
T
on
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
5
VER2.5
AGM425MA
P-Channel Typical Characteristics
30
30
20
10
0
V
DS
= -5V
V
GS
= -10V
GS
= -4.5V
GS
= -3.5V
V
V
20
10
0
V
GS
= -3.5V
V
GS
= -3V
0
1
2
3
4
5
Gate−source voltage
-V
GS
(V)
4
0
1
2
3
5
Drain−source voltage
-V
DS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
250
200
150
100
50
I
D
= -6A
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
3
6
9
12
15
Gate−source voltage
-V
GS
(V)
Source−drain voltage
-V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= -4.5V
V
GS
= -10V
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
Temperature T
j
(
°
C
)
Drain current -I
D
(A)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
6
VER2.5
AGM425MA
10000
1000
100
10
Ciss
Coss
Crss
F=1.0MHz
1
0
10
20
30
40
Drain-
source voltage
-V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
30
20
10
0
1000
100
10
10μ
s
100μ
s
DC
1ms
1
10ms
Limited by R
DS(on)
Single Pulse
0.1
0.01
T
C
=25
℃
T
J
=150
℃
0
25
50
75
100
125
150
0.1
1
10
100
Case Temperature T
C
(
°
C)
Drain−source voltage
-V
DS
(V)
Figure 9. Power Dissipation
Figure10. Safe Operating Area
10
1
Duty = 1.0
Duty = 0.5
Duty = 0.2
Duty = 0.1
Duty = 0.05
0.1
Duty = 0.02
Duty = 0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, Pulse
Width(S)
Figure 11. Normalized Maximum Transient Thermal Impedance
7
VER2.5
AGM425MA
Test Circuit
V
GS
Qg
V
DS
Qgs
Qgd
V
GS
DUT
I
G
=const
Figure A. Gate Charge Test Circuit & Waveforms
R
L
V
DS
V
DD
V
GS
R
G
DUT
V
GS
Figure B. Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
DD
DUT
V
GS
tp
Figure C. Unclamped Inductive Switching Circuit & Waveforms
8
VER2.5
AGM425MA
Dimensions:PDFN5*6
D2
D
D1
e
b
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
D1
D2
E
4.010
5.000
6.000
E1
E2
b
3.475
5.750
0.400
e
1.270 TYP.
0.610
L
0.534
0.424
0.686
0.576
L1
L2
k
0.500
1.800 REF.
1.290
1.190
0.549
ꢀe
1.390
0.701
ꢁꢂe
H
0.625
©
¶
d
ꢁꢃe
1.100
1.200
1.300
0.100
9
VER2.5
AGM425MA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on August 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
10
VER2.5
