AGM-Semi-AGM500P20D
| Part # | AGM-Semi-AGM500P20D |
Download  | AGM-Semi-AGM500P20D |
AGM500P20D
●
General Description
Product Summary
The AGM500P20D combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
BVDSS
RDSON
ID
This device is ideal
and battery
for load switch
protection applications.
-200V
500mΩ
-12A
●
Features
TO-252 Pin Configuration
■
Advance high cell density Trenc
h
t
echnology
Low R
DS(ON)
to minimize conductive loss
■
■
Low Gate Charge for fast switching
■Low Thermal resistance
■
100
%
Avalanche tested
■
100% DVDS tested
●
Application
■
MB/VGA Vcore
nd
■
SMPS 2
Synchronous Rectifier
■
POL application
■
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
16mm
AGM500P20D
AGM500P20D
TO-252
330mm
2500
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
V
V
VDS
VGS
-200
±20
-12
-7.0
-48
35
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
13.9
—
(Note 3)
EAS
T ,T
mJ
℃
Avalanche energy
Operating Junction and Storage Temperature Range
J
STG
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
50
Unit
Parameter
—
1
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
—
1
R
θJC
3.6
Thermal Resistance Junction-Case
1
VER2.6
AGM500P20D
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TC=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=-250μA
—
—
—
—
-1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
-200
—
V
DSS
DSS
=-200V,V =0V
GS
μA
nA
I
=±20V,V =0V
DS
—
±100
I
GSS
V
g
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
-2.0
—
-4.0
—
V
S
=5V,I =-3A
Forward Transconductance
Drain-Source On-State Resistance
DS
GS
D
FS
15
—
—
R
=-10V, I
=-5A
D
DS(on)
mΩ
500
650
Dynamic Characteristics
—
—
—
—
—
—
1210
170
45
C
C
C
Input Capacitance
iss
pF
pF
pF
VDS=-160V,
Output Capacitance
oss
rss
VGS=0V,
F=1MHZ
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate resistance
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
13.5
16
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-160V,
RGEN=10Ω,ID=-5A
d(off)
52
t
f
25
Q
g
35
VGS=-10V,
VDS=-160V, ID=-5A
Q
gs
gd
6
Q
15
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
A
SD
-12
Forward on Voltage
VGS=0V,IS=-5A
V
SD
V
-1.3
—
ns
—
—
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Isd=-5A , dI/dt=100A/µs ,
17
13
nc
TJ=25
℃
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM500P20D
7. Typical Characteristics (Cont.)
Power Capability
Current Capability
40
14
12
10
8
35
30
25
20
15
10
6
4
2
5
T
C
=25
o
C,V
GS
=-10V
0 25
50 75
100 125 150 175
T
C
=25
o
C,V
GS
=-10V
0
0
0
25
50
75 100
125 150 175
T
j
– Junction Temperature (°C)
Safe Operation
ea
T
j
– Junction Temperature (°C)
Transient Thermal Impedance
Duty = 0.5
60
10
2
1ms
1
10ms
t
i
m
0.2
0.1
i
L
)
100ms
n
o
(
s
d
R
0.05
0.02
0.1
1s
0.01
1
0.01
DC
Single Pulse
Mounted on 1in
2
pad
T
C
=25
o
C
R
JC
:3.5
o
C/W
1E-3
0.1
0.1
1E-4 1E-3 0.01
0.1
1
10
100
1
10
100 300
-V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
VER2.6
AGM500P20D
7. Typical Characteristics (Cont.)
Output Characteristics
On Resistance
1200
1000
800
10
8
V
GS
=-4,5,6,7,8,9,10V
6
600
V
G
S
=-10V
4
400
3V
2
200
2V
2.5
0
0.0
0
0
0.5
1.0
1.5
2.0
3.0
2
4
6
8
10
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Transfer Characteristics
Normalized Threshold Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
I
DS
=-2A
I
DS
=-250
A
280
260
240
220
200
180
160
140
120
100
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
-V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4
VER2.6
AGM500P20D
7. Typical Characteristics (cont.)
Normalized On Resistance
Diode Forward Current
2.0
40
10
V
GS
= 10V
1.8
I
DS
= 10A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
j
=150
o
C
T
j
=25
o
C
0.2
o
R @T=2
5
C:
650 m
ON
j
1
0.0
-50 -25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
25 50 75
100 125 150
T
j
– Junction Temperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
2000
1800
1600
1400
1200
1000
800
10
Frequency=1MHz
V
DS
= 75V
I
D
= 10A
8
6
4
2
0
Ciss
600
Coss
400
200
Crss
100
0
0
20
40
60
80
120
0
9
18
27
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
5
VER2.6
AGM500P20D
TO-252 Package Outline Data
D1
c
2
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
h
A1
b
0.690
0.520
䃥
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
D2
1
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
b
e
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
D
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
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ꢆe7<3
©ꢂ
©ꢃ
D
MILLIMETER
NOM
A2
SYMBOL
MIN
MAX
D1
c1
θ 1
A
A1
A2
A3
b
7.050
0.960
2.250
0.000
7.100
7.150
1.060
2.350
0.100
1.010
2.300
0.050
R
0.760REF.
1.000REF.
0.508REF.
0.508REF.
6.600
b1
c
A1
c1
D
b1
6.550
5.220
0.950
9.700
6.050
6.650
5.420
1.050
10.100
6.150
A3
D1
E
5.320
DETAIL A
c
1.000
b
e
E1
E2
e
9.900
e1
6.100
2.286BSC
4.572REF.
2.800
e1
L
2.650
0.700
2.950
0.900
R1
L1
θ1
R
0.800
7°REF.
1.300REF.
0.250REF.
T’
T
R1
0<=T,T'<=0.12
DETAIL A
6
VER2.6
AGM500P20D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on July 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.6
