AGM-Semi-AGM55N15D
| Part # | AGM-Semi-AGM55N15D |
Download  | AGM-Semi-AGM55N15D |
AGM55N15D
●
General Description
Product Summary
The AGM55N15D combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
This device is ideal
for load switch and battery
BVDSS
RDSON
ID
protection applications.
150V
48mΩ
23A
●
Features
TO-252 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
D
S
nd
■
■
■
G
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
AGM55N15D
AGM55N15D
TO-252
2500
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Value
Unit
VDS
VGS
Drain-Source Voltage (VGS=0V
）
V
V
150
Gate-Source Voltage (VDS=0V)
±20
(Note 1)
23
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
12
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
48
DM (pluse)
w
w
50
20
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
20
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
—
Max
Unit
Parameter
1
R
℃
/W
℃
/W
θJA
Thermal Resistance Junction-ambient (Steady State)
60
1
R
—
θJC
Thermal Resistance Junction-Case
2.5
1
VER2.6
AGM55N15D
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
150
—
V
=120V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
2.5
—
3.0
10
4.2
—
V
S
g
FS
=5V,I =9A
D
Forward Transconductance
DS
GS
GS
=10V, I
=9A
D
—
—
m
Ω
Ω
48
—
63
—
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=9A
D
m
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
iss
300
VDS=75V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
pF
pF
71
Reverse Transfer Capacitance
3.6
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
Ω
1.6
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4.3
3.5
7.6
3.5
3.6
1.6
1.9
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=75V,
RL=8
Ω,RGEN=6Ω
d(off)
t
f
Q
Q
g
VGS=0V, VDS=75V,
ID=9A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
TC=25
℃
—
—
—
I
23
A
SD
Forward on Voltage
VGS=0V,IS=9A
V
SD
0.73
1.0
V
ns
t
—
—
75
98
—
—
Reverse Recovery Time
Reverse Recovery Charge
IF=9A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
J
2
VER2.6
AGM55N15D
Typical Electrical & Thermal Characteristics
20
20
16
12
8
V
GS
= 10V
V
DS
= 5.0V
V
GS
= 8.0V
V
GS
= 7.0V
15
10
5
V
GS
= 6.0V
V
GS
= 5.5V
T
J
= 125°C
T
J
= 25°C
V
GS
= 5.0V
V
GS
= 4.6V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
V
DS
(V)
V
GS
(V)
Figure 1:
Saturation Characteristics
Figure 2:
Transfer Characteristics
2.5
80
70
60
50
40
30
V
GS
= 10V
2
1.5
1
I
D
= 9.0A
V
GS
= 10V
0.5
0
-50
0
50
Temperature (
C)
100
150
0
5
10
15
20
I
D
(A)
Figure 4:
R
DS
)
vs. Junction Temperature
Figure 3:
R
DS
)
vs. Drain Current
(
ON
(
ON
100
10
10000
1000
100
10
C
iss
T
J
= 125°C
1
C
oss
0.1
T
J
= 25°C
C
rss
0.01
0.001
1
0
30
60
90
120
150
0.0
0.2
0.4
0.6
V
SD
(V)
0.8
1.0
1.2
V
DS
(V)
Figure 5:
Body-Diode Characteristics
Figure 6:
Capacitance Characteristics
3
VER2.6
AGM55N15D
Typical Electrical & Thermal Characteristics
20
60
45
30
15
0
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
C)
T
CASE
(
C)
Figure 8:
Power De-rating
Figure 7:
Current De-rating
200
150
100
50
100
10
1.0
s
10
s
Limited by
R
DS(ON)
100
s
1
1.0ms
DC
10ms
0.1
0.01
T
J_Max
= 150
°
C
T
C
= 25
°
C
0
0.0001
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
(V)
Pulse Width (s)
Figure 9:
Maximum Safe Operating Area
Figure 10:
Single Pulse Power Rating, Junction-to-Case
10
Duty Cycle = T
on
/T
Peak
T
J
= T
C
+ P
D
x Z
JC
x R
JC
R
JC
= 2.5
°
C/W
1
0.1
Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11:
Normalized Maximum Transient Thermal Impedance
4
VER2.6
AGM55N15D
Test Circuit
1
)
E
AS
Test Circuits
2
)
Gate Charge Test Circuit:
3)
Switch Time Test Circuit
：
5
VER2.6
AGM55N15D
●Dimensions
SYMBOL
min
max
2.50
0.80
0.70
6.75
6.30
10.60
1.75
0.23
SYMBOL
min
max
A
b
2.10
0.50
0.45
6.30
5.30
9.20
0.90
0.00
B
0.85
0.50
0.45
5.10
2.25
4.45
0.60
1.25
0.90
0.70
5.50
2.35
4.75
1.10
b1
C
b2
D
D1
e1
e2
L3
E
L1
L2
K
6
VER2.6
AGM55N15D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.6
