AGM-Semi-AGM609C
| Part # | AGM-Semi-AGM609C |
Download  | AGM-Semi-AGM609C |
AGM609C
●
General Description
Product Summary
The AGM609C combines advanced trench MOSFET
to provide
technology with a low resistance package
extremely low R
DS(ON)
.
BVDSS
RDSON
ID
device is ideal
This
for load switch and battery
protection applications.
60V
6.3mΩ
80A
●
Features
TO-220 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
■
■
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—
AGM609C
AGM609C
TO-220
—-
1000
Table 1.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
60
±20
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
80
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
48
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
320
w
w
62.5
25
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
52
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
60
1
R
θJC
Thermal Resistance Junction-Case
2.0
1
VER2.6
AGM609C
Table 3.
Symbol
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
60
—
V
=60V,V =0V
GS
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.05
—
1.7
60
2.1
—
V
S
g
FS
=5V,I =15A
D
Forward Transconductance
DS
GS
GS
=10V, I
=20A
D
—
—
mΩ
mΩ
6.3
8.0
8.5
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
12.5
Dynamic Characteristics
—
—
—
—
—
—
2100
182
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=30V,VGS=0V,
F=100MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
129
=0V,
VGS
Rg
Gate resistance
—
3.3
—
Ω
=0V,f=1.0MHz
VDS
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
7.5
5.5
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=30V,
RL=1.5
Ω
,RGEN=3
Ω
d(off)
29.3
5.9
t
f
Q
g
52.1
7.0
VGS=10V, VDS=30V,
ID=30A
Q
gs
gd
Q
15.3
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
80
I
A
SD
Forward on Voltage
VGS=0V,IS=20A
V
SD
1.2
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
26
38
—
—
IS=20A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM609C
Fig.1 Gate-Charge
Characteristics
Fig.2 Capacitance
Characteristics
12
1810
1610
10
VDS=25V
1410
8
1210
1010
IC=8A
6
4
2
0
810
610
410
210
10
0
5
10
QG Total Gate Charge
15
0
10
20
30
Fig.3 Power Dissipation
Fig.4 Typical output Characteristics
1.2
1
100
V
GS
=10V
0.8
0.6
0.4
0.2
0
V
GS
=4.5V
50
0
0
0.5
1
1.5
2
0
50
100
150
200
Drain-Source voltage (V)
Temperature (
。
C)
Fig.5 Threshold Voltage V.S Junction Temperature
Fig.6 Resistance V.S Drain Current
2.5
2
15
10
5
1.5
1
0.5
0
0
0
10
20
30
-50
50
150
Drain Current(A)
Junction Temperature
3
VER2.6
AGM609C
Fig.7 On-Resistance VS Gate Source Voltage
Fig.8 On-Resistance V.S Junction Temperature
1.6
14
12
10
8
1.2
0.8
0.4
6
4
2
0
3
5
7
9
-50
0
50
100
150
V
GS
( V )
Temperature
Fig.9 Switching Time Measurement Circuit
Fig.10 Gate Charge Waveform
Fig.11 Switching Time Measurement Circuit
Fig.12 Gate Charge Waveform
4
VER2.6
AGM609C
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
5
VER2.6
AGM609C
TO-220 PACKAGE INFORMATION
A
E
A1
MILLIMETER
Typ.
SYMBOL
MIN
MAX
A
A1
A2
b
4.370
1.250
2.150
0.700
1.170
0.450
15.100
8.800
5.500
9.700
7.000
4.570
4.700
1.400
2.550
0.950
1.470
0.600
16.100
9.400
1.300
©ꢀ
2.350
0.800
1.270
b1
c
©ꢂ
0.500
E3
D
15.600
9.100
A2
D1
D2
E
6.300 REF
10.000
7.600 REF
2.540 BSC
5.080 BSC
13.500
3.100
b1
b
10.300
E3
e
e1
L
13.200
13.800
3.400
6.750
3.800
3.000
e
c
L1
H
e1
6.250
3.400
2.600
6.500
(Bottom View)
(Top View)
¶
Q
3.600
2.800
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ꢃe7<3
ꢂe7<3
©ꢀ
©ꢁ
©ꢂ
6
VER2.6
AGM609C
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on June 20th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.6
