AGM-Semi-AGM609MNA
| Part # | AGM-Semi-AGM609MNA |
Download  | AGM-Semi-AGM609MNA |
AGM609MNA
●
General Description
Product Summary
The AGM609MNA
combines advanced trench
MOSFET technology with a low resistance package
to provide
extremely low R
DS(ON)
.
This device is ideal
switch and battery
BVDSS
RDSON
ID
for load
protection applications.
60V
6.5mΩ
70A
●
Features
■
Advance high cell density Trench technology
PDFN5*6 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
■
■
Low Thermal resistance
100
%
Avalanche tested
100% DVDS tested
D2
D2
D1
D1
●
Application
G2
S2
G1
■
Electronic Ballast
S1
■
Electronic Transformer
■
Switch Mode Power Supply
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
AGM609MNA
AGM609MNA
PDFN5*6
330mm
3000
Tabl
e
1
.
Absolute Maximum Ratings (Tc=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
60
±20
70
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
40
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
280
54
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
22
(Note 3)
EAS
T ,T
mJ
28
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
50
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
2.3
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM609MNA
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
D
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
DSS
DSS
60
—
—
—
—
1
V
=60V,V =0V
GS
μA
I
I
=±20V,V =0V
DS
—
—
nA
±
GSS
100
V
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
1.2
—
1.6
5
2.1
—
V
S
g
FS
=5V,I =15A
D
Forward Transconductance
DS
GS
GS
=10V, I
=20A
D
—
—
mΩ
mΩ
6.5
9.5
9.0
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=15A
D
12.5
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
iss
pF
pF
pF
1456
424
14
VDS=30V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V,
—
1.3
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
VDD=30V,
RD = 5Ω,
RG = 10Ω
VGS=10V
15
20
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
d(off)
37
t
f
7
Q
g
26.9
7.2
3.5
VGS=10V, VDD=30V,
ID=20A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
70
A
SD
Forward on Voltage
VGS=0V,ISD=10A
V
SD
1.2
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
VDD=30V,IF=10A ,
nc
dI/dt=100A/µs , TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM609MNA
100
80
60
40
20
0
14
12
10
8
V
DS
=5V
10V 8V
6V
V
GS
=4V
6
4
T
j
=125
℃
2
V
GS
=3V
T
j
=25
℃
0
0
1
2
3
4
5
0
1
2
3
4
VDS (V)
VGS (V)
Fig1. Typical Output Characteristics
Fig2. Typical Transfer Characteristics
18
15
10
V
Gs
=10V
12
9
V
Gs
=4.5V
1
6
3
T
j
=25
℃
T
j
=125
℃
0
0.1
0.0
0
25
50
75
100
125
150
175
200
0.4
0.8
1.2
1.6
Tj-Iunction Temperature (
℃
)
VSD (V)
Fig3. Normalized On-Resistance Vs. Temperature
Fig4. Typical Source-Drain Diode Forward Voltage
10000
10
V
DS
=30V
I
D
=20A
C
iss
8
1000
C
oss
6
4
2
0
100
C
rss
10
1
0
10
20
30
40
0
10
20
30
40
50
60
Qg (nC)
VDS (V)
Fig5. Typical.Capacitance
Fig6. Typical.Gate Charge
3
VER2.5
AGM609MNA
MILLIMETER
●Dimensions
（
PDFN
5*6
）
SYMBOL
MIN
Typ.
1.000
MAX
A
A1
A2
D
0.900
1.100
0.254 REF.
0~0.05
4.900
D3
D
4.824
1.605
0.500
4.924
5.924
3.375
5.674
0.350
4.976
1.805
0.700
5.076
6.076
3.575
5.826
0.450
D1
D2
D3
E
1.705
0.600
5.000
6.000
D1
D2
E1
E2
b
3.475
5.750
0.400
e
1.270 TYP.
0.610
L
0.534
0.424
0.686
0.576
L1
L2
k
0.500
1.800 REF.
1.290
b
1.190
0.549
ꢀe
1.390
0.701
ꢁꢂe
e
H
0.625
©
¶
d
ꢁꢃe
1.100
1.200
1.300
0.100
Millimeters
Symbols
NOM.
1.05
0.40
MIN.
0.90
0.35
0.20
4.90
MAX.
1.20
0.50
0.35
5.20
6
8
7
6
5
5
7
8
A
b
C
H
L2
P
0.25
5.05
D1
D2
D
D1/D2
1.51 1.61 1.71
0.50 0.60 0.70
1.200
E2
d
E
E
E
1
6.15
5.75
O
6.00
5.60
6.30
5.90
E1
E2
e
3.47 3.57 3.67
1.27 BSC.
d
K
N
0.48 0.58 0.68
1.17 1.27 1.37
H
K
0.64
8°
0
0.84
L
0.74
1
3
4
2
4
2
3
1
L
L1
0.20 REF.
L1/L2
e
b
10° 12°
0.08 REF.
θ
M
N
O
P
0.15
–
θ
M
0.25 REF.
1.28 REF.
A
C
D
5
VER2.5
AGM609MNA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on July 20th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.5
