AGM-Semi-AGM609S
| Part # | AGM-Semi-AGM609S |
Download  | AGM-Semi-AGM609S |
AGM609S
●
General Description
Product Summary
The AGM609S combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
This device is ideal
protection applications.
for load switch and battery
BVDSS
RDSON
ID
●
Features
60V
7.2mΩ
14A
■
Advance high cell density Trench technology
SOP8
Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D
■
D
D
Low Thermal resistance
D
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
G
S
S
S
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
330mm
AGM609S
AGM609S
SOP8
3000
Tabl
e
1
.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
60
±20
14
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(TA=25
℃
)
I
D
A
Drain Current-Continuous(T
=100
℃
)
12
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
56
DM (pluse)
w
w
2.5
1.0
Maximum Power Dissipation(TA=25
℃
)
P
D
Maximum Power Dissipation(TA=100
℃
)
Operating Junction and Storage Temperature Range
T ,T
J
STG
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
50
R
θJA
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
VER2.5
AGM609S
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
V
V
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
60
—
V
DSS
DSS
=60V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
2.5
—
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
—
1.6
V
S
g
FS
=25V,I =8A
D
Forward Transconductance
DS
GS
GS
14
7.2
9.5
=10V, I
=12A
D
mΩ
mΩ
10
15
—
—
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=10A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
iss
pF
pF
pF
1450
280
4.1
Output Capacitance
oss
rss
VDS=20V,VGS=0V,
F=1MHZ
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
1.7
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
11
50
56
12
23
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=15V,VDS=30V,
RL=0.75
Ω,RGEN=3.3Ω
d(off)
t
f
Q
g
VGS=10V, VDS=30V,
ID=12A
Q
gs
gd
48
2.1
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
14
A
SD
Forward on Voltage
VGS=0V,IS=15A
V
SD
1.2
32
46
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
IF=15A , dI/dt=100A/µs ,
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM609S
Electrical characteristics diagrams
Diagram 2: Max. transient thermal impedance
Diagram 1: Power dissipation (SOP-8)
(
SOP-8)
10
1
70
60
50
40
30
20
10
0
10
0
0.5
0.3
0.05
0.02
-1
10
0.01
0.1
-2
10
single pulse
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
p
10
0
10
1
10
2
10
3
0
25
50
75
T
c
[
C
]
100
125
150
O
t
[s]
P
tot
=f(
T
C
)
Z
thJC
=f(
t
p
); parameter: D=
t
p
/T
Diagram 3: Safe operating area (SOP-8)
Diagram 4: Typ. gate charge
10
2
10
9
8
7
6
5
4
3
2
1
0
10µs
R
D
S(ON)
limited
10
1
10
0
100µs
30V
1ms
10ms
DC
-1
10
-2
10
-1
10
10
10
0
DS
[V]
10
1
10
2
-2
0
2
4
6
8
Q
10 12 14 16 18 20
gate
[nC]
V
I
D
=f(
V
DS
);
T
j=25°C; D=0; parameter:
t
p
V
GS
=f(
Q
gate
);
I
D
=14.5A pulsed;
V
DS
=30V
3
VER2.5
AGM609S
Diagram 5: Typ. output characteristics
Diagram 6: Typ. output characteristics
160
160
140
120
100
80
8V
6V
5V
10V
8V
10V
6V
140
120
100
80
5V
4.5V
4.5V
4V
4V
60
60
3.5V
3V
40
40
3.5V
3V
20
20
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
D
S
[V]
V
D
S
[V]
I
D
=f(
V
DS
);
T
j=25°C; parameter:
V
GS
I
D
=f(
V
DS
);
T
j=125°C; parameter:
V
GS
Diagram 7: Typ. transfer characteristics
Diagram 8: Gate threshold voltage vs.
Junction temperature
1.4
60
50
40
1.2
1.0
typ
30
125
o
C
0.8
0.6
0.4
20
25
o
C
10
0
1.0
1.5
2.0
2.5
GS
[V]
3.0
3.5
4.0
-50 -25
0
25
50
[
C
]
75 100
125 150
O
V
T
j
I
D
=f(
V
GS
);
V
DS
=15V; parameter:
T
j
V
th
=f(
T
j
); I
D
=250
μ
A
4
VER2.5
AGM609S
Diagram 9: On-state resistance vs. Drain Diagram
10: On-state resistance vs. Junction
current
temperature
2.5
12
11
10
9
2.0
1.5
1.0
0.5
8
10V
7
typ
6
5
4
3
0
0.0
2
4
6
8
10 12 14 16 18 20
I
D
[A]
-50 -25
0
25
50
[
C
]
75 100
125 150
O
T
j
R
DS
(on)=f(
I
D
);
T
j=25°C; parameter:
V
GS
R
DS
(on)=f(
T
j
);
I
D
=14A;
V
GS
=10V
Diagram 11: On-state resistance vs. Vgs
characteristics
Diagram 12: Forward characteristics of
reverse diode
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
125
o
C
25
o
C
10
1
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
O
T
c
[
C
]
V
g
s
[V]
R
DS
(on)=f(V
gs
);
T
j=25°C;
I
D
=14A
I
F
=f(
V
SD
); parameter:
T
j
5
VER2.5
AGM609S
Diagram 13: Typ. capacitances
10
4
Ciss
10
3
10
2
10
1
10
0
Coss
Crss
0
10
20
30
DS
[V]
40
50
60
V
C
=f(
V
DS
);
V
GS
=0V; f=1MHz
6
VER2.5
AGM609S
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on May 10th, 2023. This document
replaces all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
8
VER2.5
