AGM-Semi-AGM60P85AP

AGM60P85AP  

● General Description  

Product Summary  

The AGM60P85AP combines advanced trench  

MOSFET technology with a low resistance  

to provide extremely low R

DS(ON)  

.

BVDSS  

RDSON  

ID  

package  

This device is  

ideal for load switch and battery  

-60V  

80

mΩ  

-14A  

protection applications.  

PDFN3.3*3.3 Pin Configuration  

● Features  

■

Advance high cell density Trench technology  

R

DS(ON)

to minimize conductive loss  

■

■

■

■

■

Low  

Low Gate Charge for fast switching  

Low Thermal resistance  

100

%

Avalanche tested  

100% DVDS tested  

●

Application  

■

■

■

■

MB/VGA Vcore  

SMPS 2

nd

Synchronous Rectifier  

POL application  

BLDC Motor driver  

Package Marking and Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity  

AGM60P85AP  

AGM60P85AP  

PDFN3.3*3.3  

330mm  

12mm  

5000  

Tabl

e

1

.  

Absolute Maximum Ratings (Tc=25  

)

℃

Symbol  

Parameter  

Value  

-60  

Unit  

VDS  

VGS  

Drain-Source Voltage (VGS=0V

）

 

V

V

Gate-Source Voltage (VDS=0V)  

±20  

-14  

-10  

-56  

34  

(Note 1)  

Drain Current-Continuous(Tc=25

℃

)  

A

A

A

I

D

c

Drain Current-Continuous(T

 

=100

℃

)  

(Note 2)  

I

Drain Current-Continuous@ Current-Pulsed  

DM (pluse)  

w

w

Maximum Power Dissipation(Tc=25

℃

)  

Maximum Power Dissipation(Tc=100

℃

)  

P

D

14  

(Note 3)  

EAS  

Avalanche energy  

16  

mJ  

℃

T ,T  

J

STG  

Operating Junction and Storage Temperature Range  

-55 To 150  

Tabl

e

2

.  

Thermal Characteristic  

Symbol  

Typ  

Max  

Unit  

Parameter  

1

R

θJA  

℃

/W  

℃

/W  

—  

—  

50  

Thermal Resistance Junction-ambient (Steady State)  

1

R

θJC  

Thermal Resistance Junction-Case  

3.7  

1

VER2.5  

AGM60P85AP  

Table 2. P-Channel Electrical Characteristics (TJ=25

℃

unless otherwisenoted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

On/Off States  

BV  

I

V

GS  

V

DS  

V

GS  

=0V I

 

=-250μA  

D

—  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

-60  

DSS  

-72  

—  

V

μA  

nA  

=-60V,V =0V  

GS  

-1  

—  

DSS  

=±20V,V =0V  

DS  

±100  

I

—  

—  

GSS  

V

g

Gate Threshold Voltage  

V

V

V

V

=V ,I

 

=-250μA  

GS(th)  

DS GS

 

D  

-1.2  

—  

-2.1  

—  

-1.6  

16  

V

S

=-5V,I =-8A  

Forward Transconductance  

FS  

DS  

GS  

GS  

D

=-10V, I

 

=-10A  

D

97  

—  

—  

80  

mΩ  

mΩ  

R

Drain-Source On-State Resistance  

DS(on)  

=-4.5V, I

 

=-8A  

D

126  

97  

Dynamic Characteristics  

—  

—  

—  

—  

—  

—  

C

C

C

Input Capacitance  

Output Capacitance  

iss  

1450  

48  

pF  

pF  

pF  

VDS=-25V,VGS=0V,  

F=1MHZ  

oss  

Reverse Transfer Capacitance  

Gate resistance  

rss  

35  

=0V,  

=0V,f=1.0MHz  

VGS  

VDS  

Rg  

Switching Times  

Turn-on Delay Time  

—  

—  

—  

Ω

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

t

d(on)  

9.7  

5.5  

29  

nS  

nS  

nS  

nS  

nC  

nC  

nC  

t

r

Turn-on Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

VGS=-10V,VDS=-30V,  

R

L

=

3Ω,RGEN=3Ω  

t

d(off)  

t

f

6

Q

g

23.7  

2.1  

7.2  

VGS=-10V,  

VDS=-30V, ID=-10A  

Q

gs  

gd  

Q

Source-Drain Diode Characteristics  

Source-Drain Current(Body Diode)  

I

—  

—  

—  

—  

—  

-14  

-1.2  

—  

SD  

A

Forward on Voltage  

VGS=0V,IS=-10A  

V

SD  

—  

V

ns  

34  

37  

t

Reverse Recovery Time  

Reverse Recovery Charge  

IF=-10A , dI/dt=100A/µs ,  

rr  

TJ=25

℃

 

nc  

—  

Q

rr  

Notes 1.The maximum current rating is packag

e

l

imited.  

Notes  

Notes2.RepetitiveRating

:

P

ulsewidthlimitedbymaximumjunctio

n

t

emperature  

3.EAS condition: T

 

=25

℃  

J

2

VER2.5  

AGM60P85AP  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. Power Dissipation  

Figure 4. Drain Current  

Figure 5. BV

DSS

vs Junction Temperature  

Figure 6. R

DS(ON)

vs Junction Temperature  

3

VER2.5  

AGM60P85AP  

Figure 7. Gate Charge Waveforms  

Figure 8. Capacitance  

Figure 9. Body-Diode Characteristics  

Figure 10. Maximum Safe Operating Area  

4

VER2.5  

AGM60P85AP  

1) E

AS

Test Circuits  

2) Gate

 

Charge Test Circuit  

3) Switch

 

Time Test Circuit  

5

VER2.5  

AGM60P85AP  

●Dimensions

（

PDFN

3

.

3

×

3

.

3

）  

MILLIMETER  

Typ.  

b

SYMBOL  

D

MIN  

MAX  

A

A1  

A2  

D

0.700  

0.800  

0.900  

0.152 REF.  

0~0.05  

3.100  

D1  

3.000  

2.300  

2.900  

3.150  

1.320  

0.200  

0.550  

0.300  

0.180  

3.200  

2.600  

3.100  

3.450  

1.720  

0.400  

0.750  

0.500  

0.480  

D1  

E

2.450  

3.000  

E1  

E2  

b

3.300  

1.520  

0.300  

e

0.650  

L

0.400  

L1  

L2  

L3  

H

0.330  

L3  

L2  

0~0.100  

0~0.100  

0.415  

e

0.315  

0.515  

©

ꢀe  

ꢁꢂe  

ꢁꢃe  

©

6

VER2.5  

AGM60P85AP  

Disclaimer:  

The information provided in this document is believed to be accurate and reliable.  

however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume  

any responsibility for the following consequences.Do not consider the use of such  

information or use beyond its scope.  

The information mentioned in this document may be changed at any time without  

notice.  

The products and information provided in this document do not infringe patents.  

Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility  

for any infringement of any other rights of third parties.The result of using such  

products and information.  

This document is the first version issued on July 20th, 2023. This document  

replaces all previously provided information.  

It is a registered trademark of Shenzhen Core Control Electronics  

Technology Co., Ltd.  

Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights  

reserved.  

7

VER2.5