AGM-Semi-AGM60P85E
| Part # | AGM-Semi-AGM60P85E |
Download  | AGM-Semi-AGM60P85E |
AGM60P85E
●
General Description
Product Summary
The AGM60P85E combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
device is ideal
This
for load switch and battery
BVDSS
RDSON
ID
protection applications.
-60V
115mΩ
-3A
●
Features
■
Advance high cell density Trench technology
SOT-23-3 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
—-
—-
60P85
AGM60P85E
SOT-23-3
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
-60
±20
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
-3.0
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
-1.2
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
-12
w
w
2.5
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
1.0
(Note 3)
EAS
T ,T
mJ
℃
—
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
85
50
1
R
θJC
Thermal Resistance Junction-Case
1
VER2.5
AGM60P85E
Table 3.
Symbol
Electrical Characteristics (TA=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
V
V
=0V I
=250μA
—
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
DS
GS
D
-60
—
V
=-60V,V =0V
GS
-1
μA
nA
I
I
DSS
=±20V,V =0V
DS
—
±
GSS
100
V
V
V
V
V
=V ,I
=-250μA
Gate Threshold Voltage
DS GS
D
GS(th)
-1.0
—
-2.5
—
V
S
g
FS
=-5V,I =-3A
D
Forward Transconductance
DS
GS
GS
5.8
=-10V, I
=-3A
D
—
—
mΩ
mΩ
115
165
140
190
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-2A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
715
51
34
—
VDS=-15V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
Rg
Gate resistance
VGS
VDS
—
—
Ω
=0V,f=1.0MHz
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
10
17
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=-10V,VDS=-12V,
ID=-3A
,RGEN=3.3Ω
d(off)
22
t
f
21
Q
Q
g
5.9
2.9
1.8
VGS=-4.5V,
VDS=-20V, ID=-3A
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
-3.0
-1.2
I
A
SD
Forward on Voltage
VGS=0V,IS=-1A
V
SD
V
ns
t
—
—
—
—
—
—
Reverse Recovery Time
Reverse Recovery Charge
IF=-1A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.5
AGM60P85E
P-Channel Typical Characteristics
215
180
145
110
75
8
I
D
=-3A
6
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
4
2
0
V
GS
=-4.5V
V
GS
=-4V
2
4
6
8
10
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
7.5
5
10
V
DS
=-12V
I
D
=-3A
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0.2
0.4
0.6
0.8
1
0
3.5
7
10.5
14
-V
SD
, Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
25
100
175
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
VER2.5
AGM60P85E
1000
100
10
10.00
1.00
0.10
0.01
100us
1ms
Ciss
10ms
100ms
Coss
Crss
T
A
=25
o
C
DC
100
F=1.0MHz
5
Single Pulse
1
9
13
-V
DS
(V)
17
21
25
0.1
1
10
-V
DS
(V)
1000
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
VER2.5
AGM60P85E
SOT-23-3L
PACKAGE OUTLINE DIMENSIONS
c
D
L1 L
e1
A1
e
b
C
O
MM
O
N DIMENSI
O
NS
CUNI
T
S MEASURE=MILLIME
T
ER
SYMB
O
L
MIN
N
O
M
MAX
1.
3
00
0.
2
00
A
A1
A
2
b
1.050
0.000
1.050
0.
3
00
0.100
——
——
—— 1.
2
00
0.400
——
0.500
0.
2
00
c
D
E
2
.
820
1.500
2
.
6
50
2
.900
1.
6
00
2
.
8
00
0.950
T
YP
1.900
0.
6
REf
0.450
—
3
.0
20
1.700
2
.950
E1
e
e1
L
1.
8
00
2
.000
L1
0.
3
00
0.
6
00
8
°
0°
Unit:mm
6
VER2.5
AGM60P85E
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the first version issued on February 10, 2023. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.5
