AGM-Semi-AGM612MBQ
| Part # | AGM-Semi-AGM612MBQ |
Download  | AGM-Semi-AGM612MBQ |
AGM612MBQ
●
General Description
Product Summary
The AGM612MBQ combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
This device is ideal
protection applications.
for load switch and battery
BVDSS
RDSON
ID
●
Features
60V
13mΩ
29A
■
Advance high cell density Trench technology
WQFN3.3*3.3
Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
AGM612MBQ
AGM612MBQ
WQFN3.3*3.3
330mm
12mm
5000
Tabl
e
1
.
Absolute Maximum Ratings (TC=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Value
Unit
VDS
VGS
V
V
60
±20
29
Gate-Source Voltage (VDS=0V)
(Note 1)
A
A
A
Drain Current-Continuous(Tc=25
℃
)
I
D
c
Drain Current-Continuous(T
=100
℃
)
18
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
116
20.8
8.3
DM (pluse)
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
31
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
62.5
6.0
R
θJA
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
R
—
θJC
Thermal Resistance Junction-Case
1
VER2.6
AGM612MBQ
Tabl
e
3
.
Symbol
On/Off States
Electrical Characteristics (TJ=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
60
—
V
DSS
DSS
=60V,V =0V
GS
μA
nA
I
I
=±20V,V =0V
DS
—
±
GSS
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
1.2
—
1.6
2.5
—
V
S
g
FS
=5V,I =10A
D
Forward Transconductance
DS
GS
GS
—
=10V, I
=10A
D
—
—
mΩ
mΩ
13
20
18
25
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=6A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
iss
pF
pF
pF
510
Output Capacitance
oss
rss
VDS=30V,VGS=0V,
F=1MHZ
170
11
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
—
—
Ω
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
6.0
4.0
25
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=30V,
ID=8A,RGEN=3Ω
d(off)
t
f
3.0
11.7
2.0
3.5
Q
g
VGS=10V, VDS=30V,
ID=8A
Q
gs
gd
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
29
A
SD
Forward on Voltage
VGS=0V,IS=6A
V
SD
1.2
V
ns
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
IF=6A , dI/dt=100A/µs ,
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM612MBQ
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized R
DSON
vs T
J
Fig.3 Source Drain Forward Characteristics
Fig.5 Normalized V
GS(th)
vs T
J
3
VER2.6
AGM612MBQ
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
P
DM
T
ON
0.02
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
VER2.6
AGM612MBQ
W
QFN3333 Package Outlin
e
D
ata
D
A
A1
1
8
(A3)
TOP VIEW
[顶视图]
SIDE VIEW
[侧视图]
D1
D2
L
A
0.700
0.000
0.750
0.020
0.800
0.050
A1
A3
b
0.203 REF
0.400
0.350
1.600
2.900
2.900
0.450
1.800
3.100
3.100
b1
D
1.700
8
1
3.000
E
3.000
(K1)
(K)
e
0.650 BSC
0.500
BOTTOM VIEW
[背视图]
D1
D2
E1
L
0.400
0.850
2.225
0.220
0.600
1.050
2.425
0.420
0.950
2.325
0.320
K
0.280 REF
0.350 REF
K1
5
VER2.6
AGM612MBQ
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
6
VER2.6
