AGM-Semi-AGM612MNA
| Part # | AGM-Semi-AGM612MNA |
Download  | AGM-Semi-AGM612MNA |
AGM612MNA
●
General Description
Product Summary
The AGM612MNA combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
RDSON
ID
This device is ideal
for load switch and battery
protection applications.
●
Features
60V
11mΩ
50A
PDFN5*6 Pin Configuration
■
Advance high cell density Trench technology
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D2
D2
D1
D1
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
G2
nd
■
■
■
S2
G1
SMPS 2
Synchronous Rectifier
S1
POL application
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
AGM612MNA
AGM612MNA
PDFN5*6
330mm
3000
Table 1.
Absolute Maximum Ratings (TA=25
)
℃
Symbol
Parameter
Drain-Source Voltage (VGS=0V
）
Gate-Source Voltage (VDS=0V)
Value
Unit
VDS
VGS
V
V
60
±20
50
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
25
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
200
35
w
w
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
14
(Note 3)
EAS
T ,T
mJ
℃
150
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 150
Table 2.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
50
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
3.5
1
VER2.62
AGM612MNA
Table 3.
Symbol
Electrical Characteristics (T
J
=25 unless
otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
V
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
GS
D
60
—
V
V
V
=48V,V =0V
GS
μA
nA
DS
I
I
DSS
=±20V,V =0V
DS
—
GS
±
GSS
100
V
Gate Threshold Voltage
V
=V ,I
=250μA
DS GS
D
GS(th)
1
—
—
2.1
—
V
S
g
FS
V
=5V,I =6A
—
Forward Transconductance
DS
D
V
V
=10V, I
=10A
D
GS
—
—
mΩ
mΩ
11
16
16
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=6A
D
GS
21
Dynamic Characteristics
—
—
—
—
—
—
700
340
28
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=30V,VGS=0V,
F=100MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
=0V,
VGS
Rg
Gate resistance
—
—
—
Ω
=0V,f=1.0MHz
VDS
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
6.2
23
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=10V,VDS=30V,
ID=12A,RGEN=2.5
Ω
d(off)
13
t
f
17
Q
g
15
VGS=10V, VDS=30V,
ID=12A
Q
gs
gd
3.6
3.6
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
50
I
A
SD
Forward on Voltage
VGS=0V,IS=6A
V
SD
1.3
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
31
11
—
—
IS=6A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.62
AGM612MNA
Typical Characteristics
Power Capability
Current Capability
40
45
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
T
C
=25
o
C,V
G
=10V
0 20
40 60 80
100 120 140 160
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180
T
mp
–
Mounting Point Temp.
(°C)
T
mp
–
Mounting Point Temp.
(°C)
Safe Operating Area
Transient Thermal Impedance
200
100
2
1
Duty = 0.5
0.2
100us
300us
0.1
Rds(on) Limit
0.05
10
1
1ms
0.1
0.02
10ms
0.01
100ms
0.01
1E-3
1s
DC
Single Pulse
Mounted on 1in
2
pad
R
JC
:3.5
o
C/W
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 500
1E-4 1E-3 0.01
0.1
1
10
100
V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
VER2.62
AGM612MNA
Typical Characteristics (cont.)
Output Characteristics
On Resistance
40
35
30
25
20
15
10
5
40
V
GS
= 5,6,7,8,9,10V
35
30
25
20
15
10
5
V
GS
= 4.5V
4V
V
GS
=10V
3V
0
0
0
0.00
0.25
0.50
0.75
1.00
5
10 15 20 25 30 35 40
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Normalized Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
90
80
70
60
50
40
30
20
10
0
I
DS
= 250
A
I
DS
=12A
-50 -25
0
25 50 75
100 125 150
0
1
2
3
4
5
6
7
8
9
10
V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4
VER2.62
AGM612MNA
Typical Characteristics (cont.)
Normalized On Resistance
Diode Forward Current
2.0
40
10
V
GS
= 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
= 12A
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 12m
1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction Temperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
V
DS
= 30V
I
D
= 12A
Frequency=1MHz
8
6
4
2
0
Ciss
Coss
Crss
0
10
20
30
40
50
0
5
10
15
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
5
VER2.62
AGM612MNA
MILLIMETER
Typ.
●Dimensions
（
PDFN
5*6
）
SYMBOL
MIN
MAX
A
A1
A2
D
0.900
1.000
1.100
0.254 REF.
0~0.05
4.900
D3
D
4.824
1.605
0.500
4.924
5.924
3.375
5.674
0.350
4.976
1.805
0.700
5.076
6.076
3.575
5.826
0.450
D1
D2
D3
E
1.705
0.600
5.000
6.000
D1
D2
E1
E2
b
3.475
5.750
0.400
e
1.270 TYP.
0.610
L
0.534
0.424
0.686
0.576
L1
L2
k
0.500
1.800 REF.
1.290
b
1.190
0.549
ꢀe
1.390
0.701
ꢁꢂe
e
H
0.625
©
¶
d
ꢁꢃe
1.100
1.200
1.300
0.100
©
Millimeters
Symbols
NOM.
1.05
0.40
MIN.
0.90
0.35
0.20
4.90
MAX.
1.20
0.50
0.35
5.20
6
8
7
6
5
5
7
8
A
b
C
H
L2
P
0.25
5.05
D1
D2
D
D1/D2
1.51 1.61 1.71
0.50 0.60 0.70
1.200
E2
d
E
E
E
1
6.15
5.75
O
6.00
5.60
6.30
5.90
E1
E2
e
3.47 3.57 3.67
1.27 BSC.
d
K
N
0.48 0.58 0.68
1.17 1.27 1.37
H
K
0.64
8°
0
0.84
L
0.74
1
3
4
2
4
2
3
1
L
L1
0.20 REF.
L1/L2
e
b
10° 12°
0.08 REF.
θ
M
N
O
P
0.15
–
θ
M
0.25 REF.
1.28 REF.
A
C
D
6
VER2.62
AGM612MNA
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its
scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
7
VER2.62
